注文金額が
$5000vishay SQ2361ES-T1-GE3
Automotive-grade P-channel MOSFET rated for 60 volts and 2
ブランド: Vishay
製造元部品 #: SQ2361ES-T1-GE3
データシート: SQ2361ES-T1-GE3 データシート (PDF)
パッケージ/ケース: SOT-23-3
製品の種類: Single FETs, MOSFETs
SQ2361ES-T1-GE3 概要
The SQ2361ES-T1-GE3 is a high-performance GaN power amplifier manufactured by Qorvo. It operates in the frequency range of 2.5 GHz to 2.7 GHz and is specially designed for 4G LTE base station applications. The amplifier comes in a compact and lightweight SMT package, making it suitable for small form factor designs.With a typical gain of 20 dB and a power output of 20 W, the SQ2361ES-T1-GE3 offers excellent power efficiency and linearity. It features a high power-added efficiency of 38% and a low quiescent current of 275 mA, ensuring optimal performance in power-limited applications. The device also includes integrated ESD protection to ensure reliable operation in harsh environments.The SQ2361ES-T1-GE3 is designed for easy integration into existing RF systems, making it ideal for upgrading infrastructure to support the growing demand for high-speed mobile data. Its robust construction and high reliability make it suitable for use in outdoor environments and other demanding conditions.
特徴
- Low ON-resistance
- Low gate charge
- Industry-leading performance
- Fast switching speed
- High power density
- RoHS compliant
- Halogen-free
応用
- Lighting controls
- Power management
- Industrial automation
- Motor control
- Energy management systems
- Solar inverters
- Battery management systems
- Automotive electronic systems
- Uninterruptible power supplies
- Server power supplies
仕様
パラメータ | 価値 | パラメータ | 価値 |
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Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOT-23-3 | Transistor Polarity | P-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 60 V |
Id - Continuous Drain Current | 2.8 A | Rds On - Drain-Source Resistance | 177 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Vgs th - Gate-Source Threshold Voltage | 2.5 V |
Qg - Gate Charge | 9 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 2 W |
Channel Mode | Enhancement | Qualification | AEC-Q101 |
Tradename | TrenchFET | Series | SQ |
Brand | Vishay Semiconductors | Configuration | Single |
Fall Time | 4 ns | Product Type | MOSFET |
Rise Time | 9 ns | Factory Pack Quantity | 3000 |
Subcategory | MOSFETs | Transistor Type | 1 P-Channel |
Typical Turn-Off Delay Time | 22 ns | Typical Turn-On Delay Time | 8 ns |
Part # Aliases | SQ2361ES-T1_BE3 |
配送
配送タイプ | 配送料 | リードタイム | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
---|---|---|
電信送金 | 銀行手数料 US$30.00 を請求します。 | |
ペイパル | 4.0%のサービス料がかかります。 | |
クレジットカード | 3.5%のサービス料がかかります。 | |
ウエスタンユニオン | charge US.00 banking fee. | |
送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。
2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
パッキング
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ステップ1 :製品
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ステップ2 :真空包装
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ステップ3 :静電気防止袋
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ステップ4 :個包装
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ステップ5 :梱包箱
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ステップ6 :バーコード配送タグ
すべての製品は静電気防止袋に梱包されます。 ESD 帯電防止保護を備えた状態で出荷されます。
社外の ESD 梱包ラベルには、部品番号、ブランド、数量などの当社の情報が使用されます。
私たちは出荷前にすべての商品を検査し、すべての製品が良好な状態であることを確認し、部品が新しいオリジナルでデータシートと一致していることを確認します。
すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。 優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。
パーツポイント
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The SQ2361ES-T1-GE3 is a high-performance voltage-controlled oscillator (VCO) chip designed for RF and microwave applications. It features low phase noise and high linearity, making it ideal for use in wireless communication systems, radar systems, and other RF applications. The chip operates at frequencies between 5.9 GHz and 7.6 GHz, with a tuning voltage range of 0.5V to 4.5V.
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Equivalent
Some equivalent products of the SQ2361ES-T1-GE3 chip are SQ2361ES-T1-AE3, SQ2361ES-T2-GE3, and SQ2361ES-T2-AE3. These chips have similar specifications and functionality to the SQ2361ES-T1-GE3 chip. -
Features
- Low RDS(on) of 21 mΩ - High switching frequency of 500 kHz - Integrated current sensing and temperature sensing - Drives MOSFETs and IGBTs - 5 V to 13.2 V operating input voltage range - Operates up to +150 °C junction temperature - True 10 ns digital delay timing accuracy -
Pinout
The SQ2361ES-T1-GE3 is a dual N-channel MOSFET with a pin count of 8. It functions as a low-side switch in electronic circuits, providing switching and amplifying capabilities for power management applications. -
Manufacturer
The SQ2361ES-T1-GE3 is manufactured by Vishay Intertechnology, Inc., a global company specializing in semiconductor and passive electronic components. They produce a wide range of products including diodes, capacitors, resistors, and inductors used in various electronic devices and systems. -
Application Field
The SQ2361ES-T1-GE3 is primarily used in power management applications, including DC-DC converters, load switches, and battery protection circuits. Its features make it suitable for various electronic devices such as smartphones, tablets, laptops, and other portable electronics, where efficient power management is crucial for extending battery life and optimizing performance. -
Package
The SQ2361ES-T1-GE3 chip comes in a surface mount package, has a tape and reel form, and measures 3.4mm x 3mm x 0.75mm in size.
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最小注文数量は1個からとなります。
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最低国際配送料は0.00ドルから
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