注文金額が
$5000HGTG20N60B3
Insulated Gate Bipolar Transistor, 40A Collector Current, 600V Breakdown Voltage, N-Channel, TO-247
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
ブランド: Onsemi
製造元部品 #: HGTG20N60B3
データシート: HGTG20N60B3 データシート (PDF)
パッケージ/ケース: TO-247-3
製品の種類: Single IGBTs
HGTG20N60B3 概要
Delving deeper, the HGTG20N60B3 is tailor-made for applications such as motor control, power supplies, and inverters, where seamless switching transitions are non-negotiable. Leveraging Fairchild's cutting-edge trench gate technology, this transistor reduces switching losses to the minimum and subsequently enhances overall energy efficiency. Equipped with a rapid recovery body diode, bidirectional current flow is facilitated, amplifying its performance when handling inductive loads with precision and finesse
特徴
- Compact size and lightweight design
- Easy installation and maintenance friendly
- Low power consumption and high efficiency
- Good vibration resistance and durability
- Rapid recovery time and low inrush current
- High surge withstand capability and overvoltage protection
応用
- Durable construction
- Cost-effective solution
仕様
パラメータ | 価値 | パラメータ | 価値 |
---|---|---|---|
Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-247-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 1.8 V |
Maximum Gate Emitter Voltage | - 20 V, 20 V | Continuous Collector Current at 25 C | 40 A |
Pd - Power Dissipation | 165 W | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 150 C | Series | HGTG20N60B3 |
Brand | onsemi / Fairchild | Continuous Collector Current | 40 A |
Continuous Collector Current Ic Max | 40 A | Gate-Emitter Leakage Current | +/- 100 nA |
Height | 4.82 mm | Length | 15.87 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 450 |
Subcategory | IGBTs | Width | 20.82 mm |
Part # Aliases | HGTG20N60B3_NL |
配送
配送タイプ | 配送料 | リードタイム | |
---|---|---|---|
![]() |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
![]() |
フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
![]() |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
![]() |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
![]() |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
![]() |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
---|---|---|
![]() |
電信送金 | 銀行手数料 US$30.00 を請求します。 |
![]() |
ペイパル | 4.0%のサービス料がかかります。 |
![]() |
クレジットカード | 3.5%のサービス料がかかります。 |
![]() |
ウエスタンユニオン | charge US.00 banking fee. |
![]() |
送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。
2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
パッキング
-
ステップ1 :製品
-
ステップ2 :真空包装
-
ステップ3 :静電気防止袋
-
ステップ4 :個包装
-
ステップ5 :梱包箱
-
ステップ6 :バーコード配送タグ
すべての製品は静電気防止袋に梱包されます。 ESD 帯電防止保護を備えた状態で出荷されます。
社外の ESD 梱包ラベルには、部品番号、ブランド、数量などの当社の情報が使用されます。
私たちは出荷前にすべての商品を検査し、すべての製品が良好な状態であることを確認し、部品が新しいオリジナルでデータシートと一致していることを確認します。
すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。 優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。
パーツポイント
-
HGTG20N60B3 is a high-speed, high-power insulated gate bipolar transistor (IGBT) chip designed for use in industrial and automotive applications. It offers low conduction and switching losses, allowing for efficient power management in a variety of systems. Its advanced technology and robust design make it a popular choice for high-performance applications.
-
Equivalent
Some equivalent products to the HGTG20N60B3 chip are Infineon IGBT Modules like FF200R12KE3 or FF300R12KE3. You can also consider Fairchild Semiconductor's EconoDUAL 3 modules such as FJ1000R07KE3 or FJ200R07KE3 as alternatives. These products have similar specifications and performance characteristics to the HGTG20N60B3 chip. -
Features
1. 600V IGBT with ultrafast soft recovery diode 2. High frequency operation 3. High input impedance 4. Short circuit rated 5. Low gate charge 6. Square RBSOA 7. TO-247 package with added Kelvin source 8. Low saturation voltage -
Pinout
The HGTG20N60B3 is a 3-terminal IGBT module with a pin count of 3. Pin 1 is the Gate (G) which is used to control the switching of the IGBT. Pin 2 is the Emitter (E) which is connected to the ground. Pin 3 is the Collector (C) which is connected to the load. -
Manufacturer
The manufacturer of the HGTG20N60B3 is Infineon Technologies, a German semiconductor company that produces a wide range of power devices and solutions for various industries such as automotive, industrial, and renewable energy. Infineon is known for its high-quality and reliable semiconductor products for power electronics applications. -
Application Field
The HGTG20N60B3 is commonly used in power factor correction circuits, switch mode power supplies, motor control applications, and general purpose inverter circuits. It is also suitable for applications in industrial and consumer electronics, as well as medical equipment and renewable energy systems. -
Package
The HGTG20N60B3 is a IGBT (Insulated Gate Bipolar Transistor) chip in TO-247 package type. It is in a through-hole form and has a size of 23.7mm x 10.2mm x 5.5mm.
私たちは高品質の製品、思いやりのあるサービス、販売後の保証を提供します
-
豊富な商品を取り揃えておりますので、お客様の様々なニーズにお応え致します。
-
最小注文数量は1個からとなります。
-
最低国際配送料は0.00ドルから
-
全商品365日品質保証