注文金額が
$5000
HGTP10N120BN
HGTP10N120BN is an IGBT NPT with a voltage rating of 1200 V and a current rating of 35 A in a Through Hole TO-220-3 package
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ブランド: Onsemi
製造元部品 #: HGTP10N120BN
データシート: HGTP10N120BN データシート (PDF)
パッケージ/ケース: TO-220-3
RoHS ステータス:
在庫状況: 9,458 個、新しいオリジナル
製品の種類: Single IGBTs
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*すべての価格は米ドルです
数量 | 単価 | 外部価格 |
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1 | $6.353 | $6.353 |
10 | $5.695 | $56.950 |
30 | $5.294 | $158.820 |
100 | $4.957 | $495.700 |
在庫あり: 9,458 PCS
HGTP10N120BN 概要
The HGTP10N120BN product offers cutting-edge technology with its Non-Punch Through (NPT) IGBT design. This design is perfect for high voltage switching applications that require low conduction losses, making it an ideal choice for industries such as UPS, solar inverters, motor control, and power supplies. With its ability to operate at moderate frequencies, this IGBT provides reliable and efficient performance for various electronic devices
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特徴
- High Efficiency Conversion
- Wide Band-Gap Technology
- Excellent Thermal Stability
- Lead Free and RoHS Compliant
応用
- Battery Backup System
仕様
パラメータ | 価値 | パラメータ | 価値 |
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Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-220-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.45 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 35 A |
Pd - Power Dissipation | 298 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | HGTP10N120BN |
Brand | onsemi / Fairchild | Continuous Collector Current | 35 A |
Continuous Collector Current Ic Max | 35 A | Gate-Emitter Leakage Current | +/- 250 nA |
Height | 9.4 mm | Length | 10.67 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 800 |
Subcategory | IGBTs | Width | 4.83 mm |
Part # Aliases | HGTP10N120BN_NL |
配送
配送タイプ | 配送料 | リードタイム | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
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電信送金 | 銀行手数料 US$30.00 を請求します。 |
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ペイパル | 4.0%のサービス料がかかります。 |
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クレジットカード | 3.5%のサービス料がかかります。 |
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ウエスタンユニオン | charge US.00 banking fee. |
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送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。
2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
パッキング
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ステップ2 :真空包装
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ステップ3 :静電気防止袋
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ステップ6 :バーコード配送タグ
すべての製品は静電気防止袋に梱包されます。 ESD 帯電防止保護を備えた状態で出荷されます。
社外の ESD 梱包ラベルには、部品番号、ブランド、数量などの当社の情報が使用されます。
私たちは出荷前にすべての商品を検査し、すべての製品が良好な状態であることを確認し、部品が新しいオリジナルでデータシートと一致していることを確認します。
すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。 優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。
パーツポイント
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HGTP10N120BN is a power transistor chip designed for high voltage applications. It features a maximum drain current of 10A, a breakdown voltage of 1200V, and a low on-resistance. The chip is capable of handling high power levels, making it suitable for use in industries like automotive, industrial, and consumer electronics. Its compact size and efficient design make it an attractive choice for power management circuits.
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Equivalent
Some equivalent products for the HGTP10N120BN chip include STGW39MH120D, IXYS IXDF10N120P, and ON Semiconductor NGTB10N120FL2WG. These devices have similar specifications and can be used as replacements or alternatives in various applications. -
Features
The HGTP10N120BN is a MOSFET transistor that has a voltage rating of 1,200V, a current rating of 10A, and a power rating of 460W. It has low on-resistance, fast switching speed, and low gate charge. It is designed for high-frequency switching applications in power supplies, inverters, and motor control systems. -
Pinout
The HGTP10N120BN is a power MOSFET with a TO-220 packaging. It has 3 pins: gate (G), drain (D), and source (S). The gate terminal controls the flow of current between the drain and source pins. -
Manufacturer
The manufacturer of the HGTP10N120BN is Vishay Semiconductors. Vishay is a global company that specializes in manufacturing discrete semiconductors and passive electronic components. They provide a wide range of products for various industries, including automotive, telecommunications, industrial, and consumer electronics. -
Application Field
The HGTP10N120BN is a high voltage, N-channel IGBT designed for switching applications in motor drive systems, inverters, and welding equipment. It offers low conduction and switching losses, high efficiency, and high ruggedness, making it suitable for high power applications in various industries including automotive, industrial automation, and renewable energy. -
Package
The HGTP10N120BN chip is packaged in a TO-220AB form and has a size of approximately 10.16 x 4.57 x 9.14 mm.
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最小注文数量は1個からとなります。
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