注文金額が
$5000
HGTP20N60A4
IGBT for high-voltage switch-mode power supply applications
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
ブランド: Onsemi
製造元部品 #: HGTP20N60A4
データシート: HGTP20N60A4 データシート (PDF)
パッケージ/ケース: TO-220-3
RoHS ステータス:
在庫状況: 9,458 個、新しいオリジナル
製品の種類: Single IGBTs
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*すべての価格は米ドルです
数量 | 単価 | 外部価格 |
---|---|---|
1 | $1.030 | $1.030 |
200 | $0.400 | $80.000 |
500 | $0.385 | $192.500 |
800 | $0.379 | $303.200 |
在庫あり: 9,458 PCS
HGTP20N60A4 概要
Elevate your high voltage switching applications with the HGTP20N60A4, a game-changing IGBT that revolutionizes performance standards. By integrating the best attributes of MOSFETs and bipolar transistors, this device offers unmatched efficiency and reliability, making it an indispensable component for demanding industrial applications. Its optimized design ensures rapid switching speeds, making it a preferred choice for UPS systems and welding equipment where efficiency and precision are non-negotiable. Trust the HGTP20N60A4 to deliver unparalleled performance and durability in high frequency applications
![](/files/uploads/product/b/9ffa9fd6abfb46daa7462f3d80c0c826.webp)
特徴
- High-Speed Switching : tD = 15ns @ IC = 40A
- Low Input Current : IIn = 1.5μA at TJ = 125°C
- Fast Reverse Recovery Time : trr = 25ns at IC = 30A
- Low Inductive Noise : LIn = 100nH @ TJ = 125°C
- High-Power Density : PD = 2.5W/cm² at TC = 110°C
- Ultra-Low Crosstalk : CT = -60 dB @ f = 1 kHz, VI = 10V
応用
- Transportation
- Telecommunications
- Energy
仕様
パラメータ | 価値 | パラメータ | 価値 |
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Product Category | IGBT Transistors | RoHS | Details |
Technology | Si | Package / Case | TO-220-3 |
Mounting Style | Through Hole | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 600 V | Collector-Emitter Saturation Voltage | 1.8 V |
Maximum Gate Emitter Voltage | - 20 V, + 20 V | Continuous Collector Current at 25 C | 70 A |
Pd - Power Dissipation | 290 W | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 150 C | Series | HGTP20N60A4 |
Brand | onsemi / Fairchild | Continuous Collector Current | 70 A |
Continuous Collector Current Ic Max | 70 A | Gate-Emitter Leakage Current | +/- 250 nA |
Height | 9.4 mm | Length | 10.67 mm |
Product Type | IGBT Transistors | Factory Pack Quantity | 800 |
Subcategory | IGBTs | Width | 4.83 mm |
Part # Aliases | HGTP20N60A4_NL |
配送
配送タイプ | 配送料 | リードタイム | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
---|---|---|
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電信送金 | 銀行手数料 US$30.00 を請求します。 |
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ペイパル | 4.0%のサービス料がかかります。 |
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クレジットカード | 3.5%のサービス料がかかります。 |
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ウエスタンユニオン | charge US.00 banking fee. |
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送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。
2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
パッキング
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ステップ2 :真空包装
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ステップ3 :静電気防止袋
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ステップ4 :個包装
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ステップ5 :梱包箱
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ステップ6 :バーコード配送タグ
すべての製品は静電気防止袋に梱包されます。 ESD 帯電防止保護を備えた状態で出荷されます。
社外の ESD 梱包ラベルには、部品番号、ブランド、数量などの当社の情報が使用されます。
私たちは出荷前にすべての商品を検査し、すべての製品が良好な状態であることを確認し、部品が新しいオリジナルでデータシートと一致していることを確認します。
すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。 優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。
パーツポイント
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The HGTP20N60A4 is a high-speed IGBT (Insulated Gate Bipolar Transistor) chip commonly used in power electronics applications. It offers low conduction losses and high switching speeds, making it suitable for applications like motor drives, inverters, and power supplies. With a voltage rating of 600V and a current rating of 40A, it provides efficient power switching in various industrial and automotive systems.
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Equivalent
Possible equivalent products of HGTP20N60A4 chip are IRG7PH46U and IRGP50B60PD1. These products have similar specifications and can be used as substitutes for HGTP20N60A4 in various applications. -
Features
The HGTP20N60A4 is a MOSFET transistor with a voltage rating of 600V, a current rating of 40A, and a low on-resistance. It features a fast switching speed, making it suitable for high-frequency applications such as power supplies and motor control. -
Pinout
The HGTP20N60A4 is a MOSFET with 3 pins: gate (G), drain (D), and source (S). It functions as a high-voltage, high-speed switch in power electronics applications. -
Manufacturer
The HGTP20N60A4 is manufactured by Fairchild Semiconductor, which produces power management and semiconductor devices. Fairchild Semiconductor is a global company specializing in various electronic components, including MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors), integrated circuits, and power modules for diverse applications in industries like automotive, industrial, and consumer electronics. -
Application Field
The HGTP20N60A4 is commonly used in high-power switching applications such as power supplies, motor drives, and induction heating systems. Its high voltage and current ratings make it suitable for these demanding tasks, while its fast switching characteristics contribute to efficient operation. -
Package
The HGTP20N60A4 chip is a TO-220 package type, with a through-hole form factor, and its size is approximately 10.5mm x 15.5mm x 4.5mm.
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最小注文数量は1個からとなります。
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最低国際配送料は0.00ドルから
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全商品365日品質保証