注文金額が
$5000H5TQ2G63BFR-11C
High-quality DDR DRAM module for reliable data storage and processing
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
ブランド: SKHYNIX
製造元部品 #: H5TQ2G63BFR-11C
データシート: H5TQ2G63BFR-11C データシート (PDF)
パッケージ/ケース: BGA
製品の種類: メモリ
H5TQ2G63BFR-11C 概要
DescriptionThe H5TQ2G43CFR-xxC, H5TQ2G83CFR-xxC are a 2,147,483,648-bit CMOS Double Data Rate III (DDR3) Synchronous DRAM, ideally suited for the main memory applications which requires large memory density and high bandwidth. SK hynix 2Gb DDR3 SDRAMs offer fully synchronous operations referenced to both rising and falling edges of the clock. While all addresses and control inputs are latched on the rising edges of the CK (falling edges of the CK), Data, Data strobes and Write data masks inputs are sampled on both rising and falling edges of it. The data paths are internally pipelined and 8-bit prefetched to achieve very high bandwidth.FEATURES• VDD=VDDQ=1.5V +/- 0.075V• Fully differential clock inputs (CK, CK) operation• Differential Data Strobe (DQS, DQS)• On chip DLL align DQ, DQS and DQS transition with CK transition• DM masks write data-in at the both rising and falling edges of the data strobe• All addresses and control inputs except data, data strobes and data masks latched on the rising edges of the clock• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 12, 13 and 14 supported• Programmable additive latency 0, CL-1, and CL-2 supported• Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9, 10• Programmable burst length 4/8 with both nibble sequential and interleave mode• BL switch on the fly• 8banks• Average Refresh Cycle (Tcase of0 oC~ 95oC) - 7.8 µs at 0oC ~ 85 oC - 3.9 µs at 85oC ~ 95 oC• JEDEC standard 78ball FBGA(x4/x8)• Driver strength selected by EMRS• Dynamic On Die Termination supported• Asynchronous RESET pin supported• ZQ calibration supported• TDQS (Termination Data Strobe) supported (x8 only)• Write Levelization supported• 8 bit pre-fetch• This product in compliance with the RoHS directive.
![](/files/uploads/product/b/162f7138-a46e-4711-87a2-08dbbf1058dd.webp)
特徴
- 1. It has a memory capacity of 2 gigabits (Gb).
- 2. It operates at a clock frequency of 800 MHz (DDR3-800).
- 3. The module interface is 96-ball FBGA (Fine-pitch Ball Grid Array).
- 4. It requires a supply voltage of 1.5 volts.
- 5. It supports burst lengths of 4 and 8.
応用
- DDR3 SDRAM modules like H5TQ2G63BFR-11C are commonly used in computer systems and other electronic devices where high-speed memory access is required. Some typical applications include:
- 1. Personal computers and laptops.
- 2. Servers and workstations.
- 3. Gaming consoles.
- 4. Networking devices.
- 5. Mobile devices like smartphones and tablets.
仕様
パラメータ | 価値 | パラメータ | 価値 |
---|---|---|---|
Manufacturer | HYNIX |
配送
配送タイプ | 配送料 | リードタイム | |
---|---|---|---|
![]() |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
![]() |
フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
![]() |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
![]() |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
![]() |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
![]() |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
---|---|---|
![]() |
電信送金 | 銀行手数料 US$30.00 を請求します。 |
![]() |
ペイパル | 4.0%のサービス料がかかります。 |
![]() |
クレジットカード | 3.5%のサービス料がかかります。 |
![]() |
ウエスタンユニオン | charge US.00 banking fee. |
![]() |
送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。
2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
パッキング
-
ステップ1 :製品
-
ステップ2 :真空包装
-
ステップ3 :静電気防止袋
-
ステップ4 :個包装
-
ステップ5 :梱包箱
-
ステップ6 :バーコード配送タグ
すべての製品は静電気防止袋に梱包されます。 ESD 帯電防止保護を備えた状態で出荷されます。
社外の ESD 梱包ラベルには、部品番号、ブランド、数量などの当社の情報が使用されます。
私たちは出荷前にすべての商品を検査し、すべての製品が良好な状態であることを確認し、部品が新しいオリジナルでデータシートと一致していることを確認します。
すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。 優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。
パーツポイント
-
The H5TQ2G63BFR-11C is a 2 Gb DDR2 SDRAM chip designed for use in various electronic devices. It offers high-speed data transfer and low power consumption, making it ideal for applications requiring reliable memory performance. This chip is commonly used in mobile devices, consumer electronics, and networking equipment.
-
Equivalent
Some equivalent products of the H5TQ2G63BFR-11C chip include the Micron MT29F2G08ABBEAHC-IT:D and the Samsung K4B2G0846B-BCK0 chips. These chips have similar specifications and performance characteristics, making them suitable alternatives for various electronic applications. -
Features
1. 2GB LPDDR2 SDRAM 2. 8-bit prefetch 3. High-speed operation: 333MHz (DDR667) 4. Low-voltage operation: 1.8V/1.8V 5. Fully synchronous; all signals referenced to a positive clock edge 6. Internal banks for concurrent operation 7. Data mask(DQM) 8. Single Data Rate architecture; two data transfers per clock cycle -
Pinout
The H5TQ2G63BFR-11C has a 168-ball FBGA package with a x16 interface. It is a 2Gb LPDDR3 SDRAM with a speed of 1600Mbps. The functions of this memory chip include providing high-speed data storage for mobile devices and low-power consumption during operation. -
Manufacturer
The manufacturer of the H5TQ2G63BFR-11C is SK Hynix. SK Hynix is a South Korean multinational semiconductor company specializing in memory chips. They produce a wide range of memory products including DRAM, NAND flash, and SSDs for various applications such as smartphones, computers, and servers. -
Application Field
The H5TQ2G63BFR-11C is commonly used in applications requiring high-speed random access memory such as smartphones, tablets, digital cameras, and other portable electronic devices. It is designed for high-performance computing tasks and is well-suited for applications that require low power consumption and high memory bandwidth. -
Package
The H5TQ2G63BFR-11C chip is in a BGA package with 169-ball form. It has a size of 14mm by 18mm.
私たちは高品質の製品、思いやりのあるサービス、販売後の保証を提供します
-
豊富な商品を取り揃えておりますので、お客様の様々なニーズにお応え致します。
-
最小注文数量は1個からとなります。
-
最低国際配送料は0.00ドルから
-
全商品365日品質保証