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H5TQ4G63AFR-RDC

Name: H5TQ4G63AFR-RDC
Rating: 4.5 (10 reviews)

CMOS technology

ブランド: Sk Hynix Inc

製造元部品 #: H5TQ4G63AFR-RDC

データシート: H5TQ4G63AFR-RDC データシート (PDF)

パッケージ/ケース: FBGA-96

製品の種類: メモリ

RoHS ステータス:

在庫状況: 7,143 個、新しいオリジナル

Warranty: 1 Year Ovaga Warranty - Find Out More

簡単な見積もり

RFQを提出してください H5TQ4G63AFR-RDC またはメールでご連絡ください: メール: [email protected], 12時間以内にご連絡させていただきます。

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述べる

H5TQ4G63AFR-RDC 概要

H5TQ4G63AFR-RDC is a high-performance 4Gb LPDDR3 mobile DRAM chip manufactured by SK Hynix. It features a storage capacity of 4 gigabits, operating at a speed of up to 1866MHz. The chip is designed for use in mobile devices such as smartphones, tablets, and other portable electronics, offering fast and efficient data processing.With a low power consumption design, the H5TQ4G63AFR-RDC helps extend the battery life of mobile devices, making it ideal for use in energy-efficient products. The chip also incorporates a burst mode, allowing for rapid data transfer rates and smooth multitasking performance.In addition, the H5TQ4G63AFR-RDC supports advanced features like on-die termination (ODT) and auto temperature-compensated self-refresh (ATCSR), ensuring reliable and stable operation under varying conditions.

特徴

Capacity: The H5TQ4G63AFR-RDC has a capacity of 4GB

Speed: It offers high-speed data transfer for quick and efficient operation

Power efficiency: The module is designed for power-efficient performance, helping to conserve battery life

Reliability: It is built for durability and reliability, ensuring consistent performance over time

応用

Mobile devices

Wearable technology

Automotive systems

Industrial applications

Internet of Things (IoT) devices

仕様

パラメータ	価値	パラメータ	価値
Rohs Code	Yes	Part Life Cycle Code	Obsolete
Ihs Manufacturer	SK HYNIX INC	Part Package Code	BGA
Package Description	TFBGA, BGA96,9X16,32	Pin Count	96
ECCN Code	EAR99	HTS Code	8542.32.00.36
Access Mode	MULTI BANK PAGE BURST	Access Time-Max	0.195 ns
Additional Feature	AUTO/SELF REFRESH	Clock Frequency-Max (fCLK)	933 MHz
I/O Type	COMMON	Interleaved Burst Length	4,8
JESD-30 Code	R-PBGA-B96	Length	13 mm
Memory Density	4294967296 bit	Memory IC Type	DDR3 DRAM
Memory Width	16	Number of Functions	1
Number of Ports	1	Number of Terminals	96
Number of Words	268435456 words	Number of Words Code	256000000
Operating Mode	SYNCHRONOUS	Operating Temperature-Max	85 °C
Organization	256MX16	Output Characteristics	3-STATE
Package Body Material	PLASTIC/EPOXY	Package Code	TFBGA
Package Equivalence Code	BGA96,9X16,32	Package Shape	RECTANGULAR
Package Style	GRID ARRAY, THIN PROFILE, FINE PITCH	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Qualification Status	Not Qualified	Refresh Cycles	8192
Seated Height-Max	1.2 mm	Self Refresh	YES
Sequential Burst Length	4,8	Standby Current-Max	0.017 A
Supply Current-Max	0.225 mA	Supply Voltage-Max (Vsup)	1.575 V
Supply Voltage-Min (Vsup)	1.425 V	Supply Voltage-Nom (Vsup)	1.5 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	OTHER	Terminal Form	BALL
Terminal Pitch	0.8 mm	Terminal Position	BOTTOM
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED

配送

	配送料	リードタイム
DHL	$20.00-$40.00 (0.50 KG)	2-5 日々
フェデックス	$20.00-$40.00 (0.50 KG)	2-5 日々
UPS	$20.00-$40.00 (0.50 KG)	2-5 日々
TNT	$20.00-$40.00 (0.50 KG)	2-5 日々
EMS	$20.00-$40.00 (0.50 KG)	2-5 日々
登録された航空便	$20.00-$40.00 (0.50 KG)	2-5 日々

処理時間：送料は地域や国によって異なります。

支払い

支払条件		ハンドフィー
	電信送金	銀行手数料 US$30.00 を請求します。
	ペイパル	4.0％のサービス料がかかります。
	クレジットカード	3.5％のサービス料がかかります。
	ウエスタンユニオン	charge US.00 banking fee.
	送金サービス	銀行手数料は 0.00 米ドルかかります。

保証

1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。

2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。ただし、商品は元の状態のままでなければなりません。

パッキング

ステップ1 :製品
ステップ2 :真空包装
ステップ3 :静電気防止袋
ステップ4 :個包装
ステップ5 :梱包箱
ステップ6 :バーコード配送タグ

すべての製品は静電気防止袋に梱包されます。 ESD 帯電防止保護を備えた状態で出荷されます。

社外の ESD 梱包ラベルには、部品番号、ブランド、数量などの当社の情報が使用されます。

私たちは出荷前にすべての商品を検査し、すべての製品が良好な状態であることを確認し、部品が新しいオリジナルでデータシートと一致していることを確認します。

すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。

パーツポイント

The H5TQ4G63AFR-RDC is a high-performance NAND flash memory chip commonly used in mobile devices, offering fast data transfer rates and high storage capacity. It's designed for applications requiring reliable and efficient storage solutions.
Equivalent

Equivalent products to the H5TQ4G63AFR-RDC chip include: 1. Micron MT29F32G08CBACAWP-IT: 4Gb NAND Flash. 2. Samsung K4G80325FC-HC28: 4Gb LPDDR4X SDRAM. 3. SK Hynix H9HCNNN8GALUZR-NEH: 4Gb LPDDR4X SDRAM.
Features

H5TQ4G63AFR-RDC is a DDR3 SDRAM chip with a capacity of 4 gigabits. It operates at a speed of 2133 MHz and is designed for mobile devices. It features low power consumption and a compact form factor, making it suitable for use in smartphones, tablets, and other portable electronics.
Pinout

The H5TQ4G63AFR-RDC is a 4Gb LPDDR4 SDRAM with a 78-ball FBGA package. It has a 27-bit data bus with a supply voltage of 1.1V. The pin count is 78 pins. This memory chip is commonly used in mobile devices and offers high-performance and low power consumption.
Manufacturer

The manufacturer of the H5TQ4G63AFR-RDC is SK Hynix. SK Hynix is a South Korean semiconductor company that specializes in the production of memory chips, including dynamic random-access memory (DRAM) and NAND flash memory. It's one of the world's largest memory chip manufacturers, competing with companies like Samsung and Micron.
Application Field

The H5TQ4G63AFR-RDC is commonly used in mobile devices, such as smartphones and tablets, for its low power consumption and high data transfer rates. It's also suitable for automotive applications where reliability and performance are crucial, and in industrial and IoT devices where space constraints and energy efficiency are important considerations.
Package

The H5TQ4G63AFR-RDC chip is packaged in a FBGA (Fine-pitch Ball Grid Array) format with a size of 8mm x 10mm.