注文金額が
$5000SI7997DP-T1-GE3
SI7997DP-T1-GE3 is a PowerPAK SO-packaged P-channel MOSFET designed to operate at -20.8V
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ブランド: VISHAY INTERTECHNOLOGY INC
製造元部品 #: SI7997DP-T1-GE3
データシート: SI7997DP-T1-GE3 データシート (PDF)
パッケージ/ケース: PowerPAK-SO-8
製品の種類: FET, MOSFET Arrays
SI7997DP-T1-GE3 概要
Meet the SI7997DP-T1-GE3, a robust Power Field-Effect Transistor specifically engineered to handle demanding power requirements with ease. Boasting a generous 60A I(D) and a low on-resistance of 0.0078ohm, this P-Channel Silicon Metal-oxide Semiconductor FET delivers exceptional performance in a wide range of applications. Its 2-element configuration provides added flexibility for intricate circuit designs, while the HALOGEN FREE AND ROHS COMPLIANT construction aligns with environmental standards. Housed in a convenient POWERPAK, SOP-8 package, this transistor is designed for seamless integration and reliable operation. Whether it's for telecommunications, renewable energy systems, or power supplies, the SI7997DP-T1-GE3 is the go-to solution for efficient power management
特徴
仕様
パラメータ | 価値 | パラメータ | 価値 |
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Rohs Code | Yes | Part Life Cycle Code | Active |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | Package Description | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SOP-8 |
Reach Compliance Code | not_compliant | Samacsys Manufacturer | Vishay |
Avalanche Energy Rating (Eas) | 45 mJ | Case Connection | DRAIN |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 30 V |
Drain Current-Max (ID) | 60 A | Drain-source On Resistance-Max | 0.0078 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | R-XDSO-C5 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 2 | Number of Terminals | 5 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Package Body Material | UNSPECIFIED | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | P-CHANNEL | Power Dissipation-Max (Abs) | 46 W |
Pulsed Drain Current-Max (IDM) | 100 A | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | MATTE TIN |
Terminal Form | C BEND | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 40 |
配送
配送タイプ | 配送料 | リードタイム | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
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電信送金 | 銀行手数料 US$30.00 を請求します。 |
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ペイパル | 4.0%のサービス料がかかります。 |
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クレジットカード | 3.5%のサービス料がかかります。 |
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ウエスタンユニオン | charge US.00 banking fee. |
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送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
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2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
パッキング
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ステップ1 :製品
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ステップ2 :真空包装
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ステップ3 :静電気防止袋
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ステップ4 :個包装
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ステップ5 :梱包箱
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ステップ6 :バーコード配送タグ
すべての製品は静電気防止袋に梱包されます。 ESD 帯電防止保護を備えた状態で出荷されます。
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すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。 優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。
パーツポイント
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The SI7997DP-T1-GE3 is a power management IC (PMIC) integrated circuit designed by Vishay Intertechnology. It features a synchronous buck-boost converter with an integrated FET, offering high efficiency and a compact footprint for various power supply applications. This chip provides high output voltage accuracy and supports a wide input voltage range, making it suitable for use in a range of consumer electronics and industrial devices.
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Equivalent
The SI7997DP-T1-GE3 chip is an N-channel MOSFET. Equivalent products include the Si7898DP and Si7157DP. These chips have similar specifications can be used as drop-in replacements for the SI7997DP-T1-GE3. -
Features
1. SI7997DP-T1-GE3 is a 30V P-channel TrenchFET power MOSFET. 2. It has a low on-resistance of 8.4mΩ at 10V. 3. It comes in a compact 3x3mm PowerPAK package. 4. It is suitable for battery protection, load switching, and power management applications. 5. It offers high efficiency and low power dissipation. 6. It has a high current-handling capability. -
Pinout
The SI7997DP-T1-GE3 is a dual-channel, low-side power switch with a pin count of 8. It offers overcurrent protection thermal shutdown features, making it suitable for applications such as USB ports, hot-swap circuits, and power distribution systems. -
Manufacturer
The SI7997DP-T1-GE3 is manufactured by Vishay Intertechnology, Inc. Vishay Intertechnology is a global electronic components company that produces a wide range of products including discrete semiconductors, passive components, and integrated circuits. They are known for their high-quality components used in various industries such as automotive, industrial, consumer electronics, and telecommunications. -
Application Field
The SI7997DP-T1-GE3 is a power MOSFET designed for applications such as DC-DC converters, synchronous rectification in AC-DC power supplies, and motor control in consumer electronics, industrial equipment, and automotive systems. Its low on-resistance and fast switching capabilities make it suitable for high-efficiency power management solutions. -
Package
The SI7997DP-T1-GE3 chip comes in a DFN package type, with dual P-Channel MOSFETs in a single 2mm x 2mm package size.
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