注文金額が
$5000K4T51163QJ-BCE7
K4T51163QJ-BCE7 SAMSUNG
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ブランド: SAMSUNG
製造元部品 #: K4T51163QJ-BCE7
データシート: K4T51163QJ-BCE7 データシート (PDF)
パッケージ/ケース: FBGA
製品の種類: メモリ
K4T51163QJ-BCE7 概要
32M X 16 DDR DRAM, 0.4 ns, PBGA84
特徴
JEDEC standard 1.8V0.1V Power Supply
VDDQ = 1.8V0.1V
200 MHz fCK for 400Mb/sec/pin, 267MHz fCK for 533Mb/sec/pin, 333MHz fCK for 667Mb/sec/pin, 400MHz fCK for 800Mb/sec/pin
4 Banks
Posted CAS
Programmable CAS Latency: 3, 4, 5, 6
Programmable Additive Latency: 0, 1 , 2 , 3, 4 , 5
Write Latency(WL) = Read Latency(RL) -1
Burst Length: 4 , 8(Interleave/nibble sequential)
Programmable Sequential / Interleave Burst Mode
Bi-directional Differential Data-Strobe (Single-ended data strobe is an optional feature)
Off-Chip Driver(OCD) Impedance Adjustment
On Die Termination
Special Function Support
-PASR(Partial Array Self Refresh)
-50ohm ODT
-High Temperature Self-Refresh rate enable
Average Refresh Period 7.8us at lower than TCASE 85C, 3.9us at 85C < T CASE < 95 C
All of Lead-free products are compliant for RoHS
応用
The chip is designed to comply with the following key DDR2 SDRAM features such as posted CAS with additive latency, write latency = read latency -1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.
仕様
パラメータ | 価値 | パラメータ | 価値 |
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EU RoHS | Compliant | ECCN (US) | EAR99 |
Part Status | Active | HTS | 8541.29.00.95 |
Automotive | No | PPAP | No |
Category | Power MOSFET | Configuration | Single |
Channel Mode | Enhancement | Channel Type | P |
Number of Elements per Chip | 1 | Maximum Drain Source Voltage (V) | 100 |
Maximum Gate Source Voltage (V) | ±20 | Maximum Gate Threshold Voltage (V) | 3 |
Operating Junction Temperature (°C) | -55 to 150 | Maximum Continuous Drain Current (A) | 9 |
Maximum Gate Source Leakage Current (nA) | 100 | Maximum IDSS (uA) | 1 |
Maximum Drain Source Resistance (mOhm) | 240@10V | Typical Gate Charge @ Vgs (nC) | 17.5@10V|[email protected] |
Typical Gate Charge @ 10V (nC) | 17.5 | Typical Gate to Drain Charge (nC) | 3.2 |
Typical Gate to Source Charge (nC) | 2.8 | Typical Reverse Recovery Charge (nC) | 24.5 |
Typical Input Capacitance @ Vds (pF) | 1239@25V | Typical Reverse Transfer Capacitance @ Vds (pF) | 28@25V |
Minimum Gate Threshold Voltage (V) | 1 | Typical Output Capacitance (pF) | 42 |
Maximum Power Dissipation (mW) | 42000 | Typical Fall Time (ns) | 34.4 |
Typical Rise Time (ns) | 14.9 | Typical Turn-Off Delay Time (ns) | 57.4 |
Typical Turn-On Delay Time (ns) | 9.1 | Minimum Operating Temperature (°C) | -55 |
Maximum Operating Temperature (°C) | 150 | Supplier Temperature Grade | Automotive |
Packaging | Tape and Reel | Maximum Power Dissipation on PCB @ TC=25°C (W) | 42 |
Maximum Pulsed Drain Current @ TC=25°C (A) | 15 | Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 44 |
Typical Diode Forward Voltage (V) | 0.7 | Typical Gate Plateau Voltage (V) | 3.1 |
Typical Reverse Recovery Time (ns) | 25.2 | Maximum Diode Forward Voltage (V) | 1.2 |
Maximum Positive Gate Source Voltage (V) | 20 | Maximum Continuous Drain Current on PCB @ TC=25°C (A) | 9 |
Mounting | Surface Mount | Package Height | 2.29 |
Package Width | 6.1 | Package Length | 6.58 |
PCB changed | 2 | Tab | Tab |
Standard Package Name | TO-252 | Supplier Package | DPAK |
Pin Count | 3 |
配送
配送タイプ | 配送料 | リードタイム | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
---|---|---|
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電信送金 | 銀行手数料 US$30.00 を請求します。 |
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ペイパル | 4.0%のサービス料がかかります。 |
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クレジットカード | 3.5%のサービス料がかかります。 |
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ウエスタンユニオン | charge US.00 banking fee. |
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送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
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2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
パッキング
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ステップ1 :製品
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ステップ2 :真空包装
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ステップ3 :静電気防止袋
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ステップ4 :個包装
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ステップ5 :梱包箱
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ステップ6 :バーコード配送タグ
すべての製品は静電気防止袋に梱包されます。 ESD 帯電防止保護を備えた状態で出荷されます。
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すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。 優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。
パーツポイント
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The K4T51163QJ-BCE7 chip is a high-performance dynamic random-access memory (DRAM) chip. It is designed to provide fast and efficient data storage and retrieval in various electronic devices such as computers, servers, and mobile devices. Its advanced technology and capacity make it suitable for demanding applications that require high-speed and reliable memory performance.
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Equivalent
The equivalent products of the K4T51163QJ-BCE7 chip are the MT41K512M8RH-107:E, MT41K512M16HA-107:E, and MT41K512M16HA-125:E chips. -
Features
The key features of K4T51163QJ-BCE7 include its capacity of 4GB, DDR3L SDRAM technology, operating voltage range of 1.35V, and a clock frequency of 1600MHz. It is a low-voltage, high-speed memory module suitable for various applications, such as laptops, desktops, and embedded systems. -
Pinout
The K4T51163QJ-BCE7 is a DDR3L SDRAM with a pin count of 96. It is commonly used in computer memory modules and offers a capacity of 8 gigabits (1 gigabyte). It operates at a voltage of 1.35V, making it suitable for low-power applications. -
Manufacturer
Samsung is the manufacturer of the K4T51163QJ-BCE7. It is a multinational conglomerate company, specializing in various sectors such as electronics, shipbuilding, construction, and more. -
Application Field
The K4T51163QJ-BCE7 is a dynamic random-access memory (DRAM) chip commonly used in various applications, including computers, servers, laptops, and gaming consoles. It provides high-speed data storage and retrieval for these devices, thereby enhancing their performance and overall functionality. -
Package
The K4T51163QJ-BCE7 chip is in an FBGA package type. It has a 78-ball form and measures approximately 8mm by 10mm in size.
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