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FBGA

(合計 765 個のパーツ)
製造元部品番号 説明 メーカー 在庫あり 手術
MT41K1G16DGA-125:A DRAM DDR3 16G 1GX16 FBGA DDP Micron Technology 6,554 BOMに追加
SDIN7DP2-4G Boasting superior processing power, this industrial-grade NAND flash memory chip is built to withstand demanding applications Sandisk 9,458 BOMに追加
MT47H128M16HG-3IT:A Enhanced data storage capabilities Micron Technology 9,795 BOMに追加
MT47H32M16HR-3IT:F Only for OEMs and CMs Micron Technology 6,554 BOMに追加
K4G80325FB-HC25 Next-Generation DDRSDRAM for Fast Computin Samsung 6,554 BOMに追加
K4B4G1646D-BCMA This chip stores data efficientl Samsung Electro-Mechanics 6,297 BOMに追加
K4B4G1646D-BCK0 256Mx16 1.5V 90-Pin FBGA Samsung Electronics 4,101 BOMに追加
K4A8G165WC-BCRC FBGA-96 DDR SDRAM ROHS K4A8G165WC-BCRC Samsung Electronics 115 BOMに追加
MT53E1G16D1FW-046 AAT:A Robust AEC-Q100 compliance ensures flawless operation in harsh environments Micron 486 BOMに追加
MT46H16M16LFBF-6IT:H High-performance memory solution for demanding applications Micron Technology 6,554 BOMに追加
K4A8G085WB-BCRC High-Speed Memory Solution for Demanding Systems SAMSUNG SEMICONDUCTOR INC 6,554 BOMに追加
K4B4G1646E-BCNB Operating with a speed of 0.255 nanoseconds SAMSUNG SEMICONDUCTOR INC 6,554 BOMに追加
K4A8G165WB-BIRC Enjoy exceptional performance and energy efficiency with our ROHS-compliant K4A8G165WB-BIRC module, perfect for modern computing demands Samsung 6,554 BOMに追加
H5AN8G6NCJR-VKC DDR DRAM, SK HYNIX INC 6,554 BOMに追加
K4T51163QJ-BCE7 K4T51163QJ-BCE7 SAMSUNG SAMSUNG 6,554 BOMに追加
NT5CB128M16HP-CG DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96, 0.80 MM PITCH, HALOGEN FREE AND ROHS COMPLIANT, WBGA-96 NANYA TECHNOLOGY CORP 6,554 BOMに追加
PC28F128J3D-75 NOR Flash Parallel 3V/3.3V 128M-bit 16M x 8/8M x 16 75ns 64-Pin EZBGA Tray Intel Corp 3,073 BOMに追加
K6R4016V1D-EI10 SRAM Chip Async Single 3.3V 4M-bit 256K x 16 10ns 48-Pin TBGA SAMSUNG 6,554 BOMに追加
MT47H64M16HR-3 AAT:H 84FBGA DDR2 SDRAM 1GBIT 3NS IC MICRON 1 BOMに追加
NT5AD256M16D4-HRI High-density DDR4 SDRAM chip with 4Gbit capacity and 256Mx16 configuration Nanya Technology 200 BOMに追加
K4E6E304EB-EGCF The DRAM chip is designed for mobile devices, offering high performance and energy efficiency with its 178-pin FBGA package." Samsung Electronics 6,788 BOMに追加
KLM8G1GETF-B041006 KLM8G1GETF-B041006" is a high capacity memory module designed for efficient data storage and retrieval Samsung Electronics 7,500 BOMに追加
NT6AN512T32AV-J2 LPDDR4 SDRAM designed for commercial mobile applications Nanya Technology 8,162 BOMに追加
MT40A1G16KD-062E IT:E MT40A1G16KD-062E IT:E is a high-performance DDR4 DRAM module with a capacity of 16Gb Micron Technology 7,607 BOMに追加
M1A3PE1500-2FGG676 ProASIC3E Field Programmable Gate Array (FPGA) IC 444 276480 676-BGA MICROCHIP TECHNOLOGY INC 6,554 BOMに追加
MT41K512M16HA-125 AIT:A Key features: High-density memory, low voltage operation, reliable performance in automotive applications Micron Technology 6,554 BOMに追加
A3PE3000L-1FG484I ProASIC3L Field Programmable Gate Array (FPGA) IC 341 516096 484-BGA MICROCHIP TECHNOLOGY INC 6,585 BOMに追加
A3PE3000L-FG484 ProASIC3L Field Programmable Gate Array (FPGA) IC 341 516096 484-BGA MICROCHIP TECHNOLOGY INC 6,554 BOMに追加
M1A3PE1500-2FG484I FPGA - Field Programmable Gate Array M1A3PE1500-2FG484I MICROCHIP TECHNOLOGY INC 9,957 BOMに追加
H5TQ4G63CFR-RDC Experienced distributor specializing in French electronics Sk Hynix 5,267 BOMに追加
MT47H32M16HR-25E IT:G TR The MT47H32M16HR-25E IT:G TR's high-speed operation and large storage capacity make it an excellent choice for demanding computing environments Micron Technology 9,593 BOMに追加
MT47H32M16HR-25E:G Reliable and efficient DDR DRAM solution for high-speed data transfer and storage in servers, workstations, and PC Micron Technology 5,721 BOMに追加
MT42L128M32D1GU-25 WT:A 4Gbit 128Mx32 1.8V 134-Pin FBGA DRAM Chip Mobile LPDDR2 SDRAM Micron Technology 5,578 BOMに追加
MT42L128M32D1LF-25 WT:A High-density Integrated Circuit Micron Technology 7,200 BOMに追加
AGL1000V5-FGG256I FPGA - Field Programmable Gate Array IGLOO FPGA, 11KLEs MICROCHIP TECHNOLOGY INC 6,554 BOMに追加
A3PE3000L-1FG484M ProASIC3L Field Programmable Gate Array (FPGA) IC 341 516096 484-BGA MICROCHIP TECHNOLOGY INC 6,554 BOMに追加
A3PE3000L-FG484M FPGA with 75264 CLBs MICROCHIP TECHNOLOGY INC 9,668 BOMに追加
A3PE3000-2FG484I ProASIC3E Field Programmable Gate Array (FPGA) IC 341 516096 484-BGA MICROCHIP TECHNOLOGY INC 6,554 BOMに追加
A3PE3000-FGG484I ProASIC3E Field Programmable Gate Array (FPGA) IC 341 516096 484-BGA MICROCHIP TECHNOLOGY INC 6,554 BOMに追加
AC82PM45 SLB97 Effortless energy savings for on-the-go Intel Corporation 6,554 BOMに追加
KLMCG4JETD-B041 Packaged in a 153-pin FBGA form factor Samsung Electronics 3,356 BOMに追加
K4T1G084QJ-BCE7 With its advanced technology and compact design, the KJ-BCEDDR SDRAM ROHS memory module is perfect for modern device Samsung Electronics 5,811 BOMに追加
K3QF3F30BM-FGCF DRAM chip for mobile devices LPDDR3 SDRAM Samsung Electronics 5,315 BOMに追加
K4T51163QI-HCE6 No brokers or intermediaries allowed Samsung Electronics 5,962 BOMに追加
K4B4G1646B-HCK0 Lead-free memory chip Samsung Electronics 9,288 BOMに追加
NT6AN256T32AV-J2 Mobile LPDDR4 8 Gigabytes (Dual Data Rate) Synchronous Dynamic Random Access Memory Nanya Technology 6,554 BOMに追加
K4F8E304HB-MGCJ Cutting-edge technology for improved efficiency Samsung Electronics 2,167 BOMに追加
K4B2G1646F-BCNB FBGA-96 DDR SDRAM ROHS, product code: K4B2G1646F-BCNB Samsung Electronics 6,554 BOMに追加
K4A8G165WB-BCRC Description: DDR Synchronous Dynamic Random-Access Memory (SDRAM) compliant with RoHS standards SAMSUNG SEMICONDUCTOR INC 6,554 BOMに追加
K4UBE3D4AA-MGCL Upgrade your system with reliable K4UBE3D4AA-MGCL module Samsung Electro-Mechanics 6,554 BOMに追加