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ON HUF75344G3
N-Channel 55 V 75A (Tc) 285W (Tc) Through Hole TO-247-3
ブランド: ON Semiconductor, LLC
製造元部品 #: HUF75344G3
データシート: HUF75344G3 Datasheet (PDF)
パッケージ/ケース: TO-247
製品の種類: トランジスタ
HUF75344G3 概要
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products. Formerly developmental type TA75344.
特徴
- 75A, 55V
- Simulation Models
- Temperature Compensated PSPICE® and SABER™Models
- Thermal Impedance PSPICE and SABER Models
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, “Guidelines for Soldering Surface MountComponents to PC Boards”
応用
- Other Audio & Video
仕様
| パラメータ | 価値 | パラメータ | 価値 |
|---|---|---|---|
| Manufacturer: | onsemi | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | Through Hole | Package / Case: | TO-247-3 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 55 V | Id - Continuous Drain Current: | 75 A |
| Rds On - Drain-Source Resistance: | 8 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V | Qg - Gate Charge: | 210 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 285 W | Channel Mode: | Enhancement |
| Tradename: | UltraFET | Series: | HUF75344G3 |
| Packaging: | Tube | Brand: | onsemi / Fairchild |
| Configuration: | Single | Fall Time: | 57 ns |
| Height: | 20.82 mm | Length: | 15.87 mm |
| Product Type: | MOSFET | Rise Time: | 125 ns |
| Factory Pack Quantity: | 450 | Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel | Type: | MOSFET |
| Typical Turn-Off Delay Time: | 46 ns | Typical Turn-On Delay Time: | 13 ns |
| Width: | 4.82 mm | Part # Aliases: | HUF75344G3_NL |
| Unit Weight: | 0.211644 oz | feature-category | Power MOSFET |
| feature-material | Si | feature-process-technology | UltraFET |
| feature-configuration | Single | feature-channel-mode | Enhancement |
| feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
| feature-maximum-drain-source-voltage-v | 55 | feature-maximum-gate-source-voltage-v | ±20 |
| feature-maximum-gate-threshold-voltage-v | 4 | feature-maximum-continuous-drain-current-a | 75 |
| feature-maximum-drain-source-resistance-mohm | 8@10V | feature-typical-gate-charge-vgs-nc | 175@20V |
| feature-typical-gate-charge-10v-nc | feature-typical-input-capacitance-vds-pf | 3200@25V | |
| feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 285000 | |
| feature-packaging | Tube | feature-rad-hard | |
| feature-pin-count | 3 | feature-supplier-package | TO-247 |
| feature-standard-package-name1 | TO | feature-cecc-qualified | No |
| feature-esd-protection | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | Yes |
| feature-svhc-exceeds-threshold | Yes |
配送
| 配送タイプ | 配送料 | リードタイム | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間：送料は地域や国によって異なります。
支払い
| 支払条件 | ハンドフィー | |
|---|---|---|
 |
電信送金 | 銀行手数料 US$30.00 を請求します。 |
 |
ペイパル | 4.0％のサービス料がかかります。 |
 |
クレジットカード | 3.5％のサービス料がかかります。 |
 |
ウエスタンユニオン | charge US.00 banking fee. |
 |
送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
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パーツポイント
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The HUF75344G3 is a power MOSFET chip utilized in electronic devices for controlling and switching high current loads. It is designed to handle high voltage and current levels efficiently, serving as a reliable component in various applications such as power supplies, motor control circuits, and automotive systems. The chip's advanced features make it an integral part of electronic designs requiring robust and efficient power management.
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Features
The HUF75344G3 is a high-voltage MOSFET transistor with a low on-resistance and fast switching speed. It has a drain-source voltage rating of 55V and a continuous drain current of 75A. The transistor is designed for use in power conversion and motor control applications. -
Pinout
The HUF75344G3 is a power MOSFET with a pin count of 8. It is designed for low on-resistance and fast switching. The pin functions typically include gate, source, and drain connections for controlling the flow of current in a circuit. -
Manufacturer
The manufacturer of the HUF75344G3 is Infineon Technologies. It is a global semiconductor company that designs, manufactures, and markets a wide range of electronic components and systems. -
Application Field
The HUF75344G3 is a high voltage MOSFET that is commonly used in applications such as power supplies, motor control, lighting, and switching circuits. It can handle high voltage and current levels, making it suitable for various industrial and automotive applications. -
Package
The HUF75344G3 chip has a package type of TO-247, a form of N-Channel, and a size of 8.65mm x 19.3mm.
データシート PDF
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