ON HUF75339P3
N-Channel 55 V 75A (Tc) 200W (Tc) Through Hole TO-220-3
ブランド: ON Semiconductor, LLC
製造元部品 #: HUF75339P3
データシート: HUF75339P3 Datasheet (PDF)
パッケージ/ケース: TO-220
製品の種類: トランジスタ
HUF75339P3 概要
These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored charge. It was designed for use in applications where power efficiency is important, such as switching regulators, switching converters, motor drivers, relay drivers, lowvoltage bus switches, and power management in portable and battery-operated products.
Formerly developmental type TA75339.
特徴
- 75A, 55V
- SPICE and SABER Thermal Impedance Models
- Temperature Compensated PSPICE® and SABER™ Models
- Peak Current vs Pulse Width Curve
- UIS Rating Curve
- Related Literature
- TB334, "Guidelines for Soldering Surface Mount Components to PC Boards"
応用
- AC-DC Merchant Power Supply - Servers & Workstations
- Workstation
- Server & Mainframe
仕様
パラメータ | 価値 | パラメータ | 価値 |
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Manufacturer: | onsemi | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 55 V | Id - Continuous Drain Current: | 75 A |
Rds On - Drain-Source Resistance: | 12 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V | Qg - Gate Charge: | 130 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 200 W | Channel Mode: | Enhancement |
Tradename: | UltraFET | Series: | HUF75339P3 |
Packaging: | Tube | Brand: | onsemi / Fairchild |
Configuration: | Single | Fall Time: | 25 ns |
Height: | 16.3 mm | Length: | 10.67 mm |
Product Type: | MOSFET | Rise Time: | 60 ns |
Factory Pack Quantity: | 50 | Subcategory: | MOSFETs |
Transistor Type: | 1 N-Channel | Type: | MOSFET |
Typical Turn-Off Delay Time: | 20 ns | Typical Turn-On Delay Time: | 15 ns |
Width: | 4.7 mm | Part # Aliases: | HUF75339P3_NL |
Unit Weight: | 0.068784 oz | feature-category | Power MOSFET |
feature-material | Si | feature-process-technology | UltraFET |
feature-configuration | Single | feature-channel-mode | Enhancement |
feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
feature-maximum-drain-source-voltage-v | 55 | feature-maximum-gate-source-voltage-v | ±20 |
feature-maximum-gate-threshold-voltage-v | 4 | feature-maximum-continuous-drain-current-a | 75 |
feature-maximum-drain-source-resistance-mohm | 12@10V | feature-typical-gate-charge-vgs-nc | 110@20V |
feature-typical-gate-charge-10v-nc | feature-typical-input-capacitance-vds-pf | 2000@25V | |
feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 200000 | |
feature-packaging | Tube | feature-rad-hard | |
feature-pin-count | 3 | feature-supplier-package | TO-220 |
feature-standard-package-name1 | TO | feature-cecc-qualified | No |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | Yes |
feature-svhc-exceeds-threshold | No |
配送
配送タイプ | 配送料 | リードタイム | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
---|---|---|
電信送金 | 銀行手数料 US$30.00 を請求します。 | |
ペイパル | 4.0%のサービス料がかかります。 | |
クレジットカード | 3.5%のサービス料がかかります。 | |
ウエスタンユニオン | charge US.00 banking fee. | |
送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
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2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
パッキング
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ステップ2 :真空包装
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ステップ3 :静電気防止袋
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ステップ4 :個包装
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ステップ6 :バーコード配送タグ
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すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。 優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。
パーツポイント
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The HUF75339P3 is a power MOSFET chip designed for high-current applications. It provides low ON-resistance and high switching speed, making it suitable for power management and motor control circuits. The chip can handle high levels of current while minimizing power dissipation and temperature rise. Its compact size and robust construction make it an efficient choice for various electronic devices and systems.
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Features
The HUF75339P3 is a N-channel MOSFET transistor with a drain-source voltage (VDS) of 55V, a continuous drain current (ID) of 75A, and a low on-resistance (RDS(on)) of 3.9mΩ. It features a compact and space-saving package, making it suitable for various applications in power electronics such as motor control, power supplies, and inverters. -
Pinout
The HUF75339P3 is a power MOSFET transistor. It has a pin count of 3. The three pins are G (gate), D (drain), and S (source), which are used for controlling the flow of current in a circuit. -
Manufacturer
The manufacturer of the HUF75339P3 is ON Semiconductor. It is a global semiconductor supplier, providing a comprehensive portfolio of energy-efficient, easy-to-use products that help customers solve their unique design challenges across a wide range of applications. -
Application Field
The HUF75339P3 is a MOSFET transistor that is commonly used in automotive applications such as powertrain control, electric power steering, and ignition systems. It can also be used in industrial applications that require high power switching capability, such as motor control and battery charging systems. -
Package
The package type of the HUF75339P3 chip is TO-220, its form is through-hole, and the size is approximately 10.16mm x 15.87mm.
データシート PDF
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最小注文数量は1個からとなります。
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