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ON FDS86252
N-Channel 150 V 4.5A (Ta) 2.5W (Ta), 5W (Tc) Surface Mount 8-SOIC
ブランド: ON Semiconductor, LLC
製造元部品 #: FDS86252
データシート: FDS86252 Datasheet (PDF)
パッケージ/ケース: SO-8
製品の種類: トランジスタ
FDS86252 概要
This N-Channel MOSFET is produced using an advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintaiin superior switching performance.
特徴
- Max rDS(on) = 55 mΩ at VGS = 10 V, ID = 4.5 A
- Max rDS(on) = 80 mΩ at VGS = 6 V, ID = 3.7 A
- High performance trench technology for extremely low rDS(on)
- High power and current handling capability in a widely used surface mount package
- 100% UIL Tested
- RoHS Compliant
応用
- Consumer Appliances
- DC-DC Conversion
仕様
| パラメータ | 価値 | パラメータ | 価値 |
|---|---|---|---|
| Manufacturer: | onsemi | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | SOIC-8 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 150 V | Id - Continuous Drain Current: | 4.5 A |
| Rds On - Drain-Source Resistance: | 55 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 3.4 V | Qg - Gate Charge: | 10.6 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 5 W | Channel Mode: | Enhancement |
| Tradename: | PowerTrench | Series: | FDS86252 |
| Packaging: | MouseReel | Brand: | onsemi / Fairchild |
| Configuration: | Single | Fall Time: | 2.9 ns |
| Forward Transconductance - Min: | 13 S | Height: | 1.75 mm |
| Length: | 4.9 mm | Product Type: | MOSFET |
| Rise Time: | 1.6 ns | Factory Pack Quantity: | 2500 |
| Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
| Typical Turn-Off Delay Time: | 14 ns | Typical Turn-On Delay Time: | 9.2 ns |
| Width: | 3.9 mm | Unit Weight: | 0.004586 oz |
| feature-category | Power MOSFET | feature-material | |
| feature-process-technology | TMOS | feature-configuration | Single Quad Drain Triple Source |
| feature-channel-mode | Enhancement | feature-channel-type | N |
| feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 150 |
| feature-maximum-gate-source-voltage-v | ±20 | feature-maximum-gate-threshold-voltage-v | |
| feature-maximum-continuous-drain-current-a | 4.5 | feature-maximum-drain-source-resistance-mohm | 55@10V |
| feature-typical-gate-charge-vgs-nc | 10.6@10V|5.2@5V | feature-typical-gate-charge-10v-nc | 10.6 |
| feature-typical-input-capacitance-vds-pf | 718@75V | feature-typical-output-capacitance-pf | |
| feature-maximum-power-dissipation-mw | 2500 | feature-packaging | Tape and Reel |
| feature-rad-hard | feature-pin-count | 8 | |
| feature-supplier-package | SOIC | feature-standard-package-name1 | SO |
| feature-cecc-qualified | No | feature-esd-protection | |
| feature-military | No | feature-aec-qualified | No |
| feature-aec-qualified-number | feature-auto-motive | No | |
| feature-p-pap | No | feature-eccn-code | EAR99 |
| feature-svhc | No |
配送
| 配送タイプ | 配送料 | リードタイム | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間：送料は地域や国によって異なります。
支払い
| 支払条件 | ハンドフィー | |
|---|---|---|
 |
電信送金 | 銀行手数料 US$30.00 を請求します。 |
 |
ペイパル | 4.0％のサービス料がかかります。 |
 |
クレジットカード | 3.5％のサービス料がかかります。 |
 |
ウエスタンユニオン | charge US.00 banking fee. |
 |
送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
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2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
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パーツポイント
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The FDS86252 is a chip used for driving N-Channel MOSFETs in various switching applications, such as motor control, power supplies, and lighting systems. It is equipped with a high-speed gate drive to optimize switching characteristics, and it offers low on-resistance and low gate charge. The chip provides protection features like thermal shutdown, overcurrent protection, and UVLO (Undervoltage Lockout), making it suitable for a wide range of applications that require efficient and reliable MOSFET control.
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Equivalent
The FDS86252 chip is a dual N-channel PowerTrench MOSFET. There are several equivalent products available from different manufacturers, including the IRF7313, SiR427DP, and STP9NK60ZFP. These chips have similar specifications and can be used as alternatives in various applications. -
Features
The FDS86252 is a dual N-Channel PowerTrench® MOSFET with a low on-resistance and high current rating. It is capable of efficient switching, making it suitable for use in power management circuits and battery protection systems. It features a compact and surface-mountable SO-8 package for ease of use and integration. -
Pinout
The FDS86252 is a dual N-channel PowerTrench MOSFET with a 6-pin SOT-23 package. Its pins include the source (S), gate (G), and drain (D) for each of the two MOSFETs. It is primarily used for switching applications in power management and load switching circuits. -
Manufacturer
The manufacturer of the FDS86252 is Fairchild Semiconductor Corporation. It is a global company that designs, manufactures, and markets semiconductor devices used in various applications such as automotive, consumer electronics, computing, industrial, and telecommunications. -
Application Field
The FDS86252 is a dual N-channel PowerTrench® MOSFET suitable for a wide range of applications, including power management, battery charging, motor control, and solid-state relays. It offers low on-resistance, fast switching capabilities, and high thermal performance, making it ideal for various high-frequency switching applications in automotive, industrial, and consumer electronics. -
Package
The FDS86252 chip is a surface mount package with an SO-8 (Small Outline) form factor. Its size is 5.00mm x 6.2mm x 1.75mm.
データシート PDF
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