ON FDMC86116LZ
N-Channel 100 V 3.3A (Ta), 7.5A (Tc) 2.3W (Ta), 19W (Tc) Surface Mount 8-MLP (3.3x3.3)
ブランド: ON Semiconductor, LLC
製造元部品 #: FDMC86116LZ
データシート: FDMC86116LZ Datasheet (PDF)
パッケージ/ケース: Power 33
製品の種類: トランジスタ
FDMC86116LZ 概要
This N-Channel logic Level MOSFETs are produced using an advanced Power Trench® process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance. G-S Zener has been added to enhance ESD voltage level.
特徴
- Maximum RDS(on) = 103 mΩ at VGS = 10 V, ID = 3.3 A
- Maximum RDS(on) = 153 mΩ at VGS = 4.5 V, ID = 2.7 A
- HBM ESD protection level >3 KV typical
- 100% UIL Tested
- RoHS Compliant
応用
- Consumer
仕様
パラメータ | 価値 | パラメータ | 価値 |
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Source Content uid | FDMC86116LZ | Pbfree Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
Package Description | 3.30 X 3.30 MM, ROHS COMPLIANT, POWER 33, MLP, 8 PIN | Manufacturer Package Code | 511DR |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Factory Lead Time | 66 Weeks | Samacsys Manufacturer | onsemi |
Application | SWITCHING | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | S-PDSO-N5 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 5 |
Operating Mode | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
Package Shape | SQUARE | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Surface Mount | YES | Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
Terminal Form | NO LEAD | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Element Material | SILICON |
feature-category | Power MOSFET | feature-material | |
feature-process-technology | TMOS | feature-configuration | Single Quad Drain Triple Source |
feature-channel-mode | Enhancement | feature-channel-type | N |
feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 100 |
feature-maximum-gate-source-voltage-v | ±20 | feature-maximum-gate-threshold-voltage-v | 2.2 |
feature-maximum-continuous-drain-current-a | 3.3 | feature-maximum-drain-source-resistance-mohm | 103@10V |
feature-typical-gate-charge-vgs-nc | 4@10V|[email protected] | feature-typical-gate-charge-10v-nc | 4 |
feature-typical-input-capacitance-vds-pf | 232@50V | feature-typical-output-capacitance-pf | |
feature-maximum-power-dissipation-mw | 2300 | feature-packaging | Tape and Reel |
feature-rad-hard | feature-pin-count | 8 | |
feature-supplier-package | Power 33 | feature-standard-package-name1 | |
feature-cecc-qualified | No | feature-esd-protection | Yes |
feature-military | No | feature-aec-qualified | No |
feature-aec-qualified-number | feature-auto-motive | No | |
feature-p-pap | No | feature-eccn-code | EAR99 |
feature-svhc | No |
配送
配送タイプ | 配送料 | リードタイム | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
---|---|---|
電信送金 | 銀行手数料 US$30.00 を請求します。 | |
ペイパル | 4.0%のサービス料がかかります。 | |
クレジットカード | 3.5%のサービス料がかかります。 | |
ウエスタンユニオン | charge US.00 banking fee. | |
送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。
2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
パッキング
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ステップ1 :製品
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ステップ2 :真空包装
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ステップ3 :静電気防止袋
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ステップ4 :個包装
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ステップ5 :梱包箱
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ステップ6 :バーコード配送タグ
すべての製品は静電気防止袋に梱包されます。 ESD 帯電防止保護を備えた状態で出荷されます。
社外の ESD 梱包ラベルには、部品番号、ブランド、数量などの当社の情報が使用されます。
私たちは出荷前にすべての商品を検査し、すべての製品が良好な状態であることを確認し、部品が新しいオリジナルでデータシートと一致していることを確認します。
すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。 優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。
パーツポイント
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The FDMC86116LZ chip is a high-voltage integrated circuit designed for automotive applications. It contains six 100V N-channel PowerTrench MOSFETs, enabling efficient power management in various vehicle systems. The chip offers low on-resistance and fast switching performance, making it suitable for applications such as electronic power steering, transmission control modules, and other automotive control systems.
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Features
Some of the features of FDMC86116LZ include a dual high-side driver, integrated bootstrap diode, low voltage logic inputs, and internal dead-time generation. It also has a high input voltage range, low-side MOSFETs with low on-resistance, and over-voltage, over-current, and thermal protection features. -
Pinout
The FDMC86116LZ has a pin count of 8. Its main function is a 100 V n-channel PowerTrench MOSFET specifically designed for automotive applications. It provides low RDS(on) and fast switching performance, making it ideal for power management systems in vehicles. -
Manufacturer
FDMC86116LZ is manufactured by Fairchild Semiconductor, an American company that specializes in the design and production of integrated circuits. They focus on developing power management solutions for a wide range of applications, including consumer electronics, automotive, telecommunications, and industrial sectors. -
Application Field
The FDMC86116LZ is commonly used in industrial applications such as motor control, power supplies, and general purpose inverters. It provides high power efficiency and accuracy, making it suitable for various demanding applications that require precise control of electric motors and power delivery systems. -
Package
The package type of the FDMC86116LZ chip is DSO-8. It has a rectangular form with a size of approximately 5.3mm x 6.2mm.
データシート PDF
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最小注文数量は1個からとなります。
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最低国際配送料は0.00ドルから
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全商品365日品質保証
This product helped me achieve my electronic design goals faster and with more precision.