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ON NTLJD3115PT1G
Mosfet Array 20V 2.3A 710mW Surface Mount 6-WDFN (2x2)
ブランド: ON Semiconductor, LLC
製造元部品 #: NTLJD3115PT1G
データシート: NTLJD3115PT1G Datasheet (PDF)
パッケージ/ケース: WDFN EP
製品の種類: トランジスタ
NTLJD3115PT1G 概要
Mosfet Array 20V 2.3A 710mW Surface Mount 6-WDFN (2x2)
特徴
- WDFN Package Provides Exposed Drain Pad for Excellent Thermal Conduction
- 2x2 mm Footprint Same as SC-88
- Lowest RDS(on) Solution in 2x2 mm Package
- 1.8 V RDS(on) Rating for Operation at Low Voltage Gate Drive Logic Level
- Low Profile (< 0.8 mm) for Easy Fit in Thin Environments
- Bidirectional Current Flow with Common Source Configuration
応用
- Optimized for Battery and Load Management Applications in Portable Equipment
- Li-Ion Battery Charging and Protection Circuits
- High Side Load Switch
仕様
| パラメータ | 価値 | パラメータ | 価値 |
|---|---|---|---|
| Source Content uid | NTLJD3115PT1G | Pbfree Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
| Part Package Code | WDFN6 2x2, 0.65P | Package Description | WDFN-6 |
| Pin Count | 6 | Manufacturer Package Code | 506AN |
| Reach Compliance Code | compliant | ECCN Code | EAR99 |
| Factory Lead Time | 22 Weeks | Samacsys Manufacturer | onsemi |
| Additional Feature | LOGIC LEVEL COMPATIBLE | Case Connection | DRAIN |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 20 V |
| Drain Current-Max (ID) | 2.3 A | Drain-source On Resistance-Max | 0.135 Ω |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | JESD-30 Code | S-PDSO-N6 |
| JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
| Number of Elements | 1 | Number of Terminals | 6 |
| Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
| Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
| Power Dissipation-Max (Abs) | 1.5 W | Pulsed Drain Current-Max (IDM) | 20 A |
| Qualification Status | Not Qualified | Surface Mount | YES |
| Terminal Finish | MATTE TIN | Terminal Form | NO LEAD |
| Terminal Position | DUAL | Time@Peak Reflow Temperature-Max (s) | 30 |
| Transistor Application | SWITCHING | Transistor Element Material | SILICON |
| feature-category | Power MOSFET | feature-material | |
| feature-process-technology | feature-configuration | Dual | |
| feature-channel-mode | Enhancement | feature-channel-type | P |
| feature-number-of-elements-per-chip | 2 | feature-maximum-drain-source-voltage-v | 20 |
| feature-maximum-gate-source-voltage-v | ±8 | feature-maximum-gate-threshold-voltage-v | 1 |
| feature-maximum-continuous-drain-current-a | 3.3 | feature-maximum-drain-source-resistance-mohm | [email protected] |
| feature-typical-gate-charge-vgs-nc | [email protected] | feature-typical-gate-charge-10v-nc | 5.5 |
| feature-typical-input-capacitance-vds-pf | 531@10V | feature-typical-output-capacitance-pf | 91 |
| feature-maximum-power-dissipation-mw | 2300 | feature-packaging | Tape and Reel |
| feature-rad-hard | feature-pin-count | 6 | |
| feature-supplier-package | WDFN EP | feature-standard-package-name1 | DFN |
| feature-cecc-qualified | No | feature-esd-protection | |
| feature-military | No | feature-aec-qualified | No |
| feature-aec-qualified-number | feature-auto-motive | No | |
| feature-p-pap | No | feature-eccn-code | EAR99 |
| feature-svhc | No |
配送
| 配送タイプ | 配送料 | リードタイム | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間：送料は地域や国によって異なります。
支払い
| 支払条件 | ハンドフィー | |
|---|---|---|
 |
電信送金 | 銀行手数料 US$30.00 を請求します。 |
 |
ペイパル | 4.0％のサービス料がかかります。 |
 |
クレジットカード | 3.5％のサービス料がかかります。 |
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ウエスタンユニオン | charge US.00 banking fee. |
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送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
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パーツポイント
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The NTLJD3115PT1G chip is a high-speed, low voltage dual N-channel MOSFET designed for applications such as load and motor control. It has a compact 2mm x 2mm package and features low on-resistance with fast switching capabilities. This chip is suitable for use in a variety of electronic devices that require efficient power management and control.
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Features
The NTLJD3115PT1G is a high-performance N-channel MOSFET transistor. It has a low on-resistance, high power dissipation capability, and is designed for applications requiring high efficiency power conversion. The device offers low gate charge which enables faster switching, making it suitable for various applications including power supplies, motor controls, and automotive systems. -
Pinout
The NTLJD3115PT1G is a MOSFET transistor with a 6-pin DFN package. It is a dual N-Channel enhancement mode transistor designed for low voltage, high-speed switching applications. The pin count includes 3 pins per channel: drain, source, and gate for each N-Channel. -
Manufacturer
The manufacturer of the NTLJD3115PT1G is ON Semiconductor. It is a semiconductor manufacturing company that specializes in designing and producing a wide range of integrated circuits, power management solutions, and discrete components for various industries including automotive, communications, consumer electronics, and industrial applications. -
Application Field
The NTLJD3115PT1G is a low on-resistance single-channel logic level N-channel MOSFET. It can be used in a variety of applications, including power management, load switching, battery charging, and motor control. Its compact package and high efficiency make it suitable for portable electronics, automotive systems, industrial equipment, and more. -
Package
The NTLJD3115PT1G chip is available in a surface mount package type known as SOT-563. It is a small form factor package with dimensions measuring approximately 1.6mm x 1.6mm x 0.6mm.
データシート PDF
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