注文金額が
$5000ON NTJD4158CT1G
MOSFETs- Power and Small Signal PFET 20V .88A 1OHM
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ブランド: ON Semiconductor, LLC
製造元部品 #: NTJD4158CT1G
データシート: NTJD4158CT1G Datasheet (PDF)
パッケージ/ケース: SC-70-6
製品の種類: FET, MOSFET Arrays
NTJD4158CT1G 概要
Whether you are designing circuitry for consumer electronics, industrial machinery, or telecommunications equipment, the NTJD4158CT1G MOSFET transistor provides the performance and reliability you need. Its complemented N and P channel configuration, along with its low on-resistance and high power dissipation capabilities, make it a versatile and efficient component for a wide range of applications. Consider incorporating the NTJD4158CT1G into your next design to benefit from its compact size, moderate power handling, and reliable operation. With its MSL 1 - Unlimited moisture sensitivity rating and compliance with SVHC regulations, this transistor is a safe and dependable choice for your projects
特徴
- Low Noise and EMI Immunity
- High Temperature Operating Capability
- Wide Input Voltage Range and Overvoltage Protection
- Soft Startup and Shutdown Control for Low Inrush Current
- Economical Design with High Reliability
- SMT Package for Easy Mounting and Handling
応用
- Low Power Consumption
- Short Circuit Detection
- Thermal Management
仕様
パラメータ | 価値 | パラメータ | 価値 |
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Source Content uid | NTJD4158CT1G | Pbfree Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
Part Package Code | SC-88/SC70-6/SOT-363 6 LEAD | Package Description | SC-88, SC-70, 6 PIN |
Pin Count | 6 | Manufacturer Package Code | 419B-02 |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
HTS Code | 8541.29.00.95 | Factory Lead Time | 51 Weeks |
Samacsys Manufacturer | onsemi | Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR |
DS Breakdown Voltage-Min | 30 V | Drain Current-Max (ID) | 0.25 A |
Drain-source On Resistance-Max | 2.5 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
Feedback Cap-Max (Crss) | 12 pF | JESD-30 Code | R-PDSO-G6 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 2 | Number of Terminals | 6 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL AND P-CHANNEL |
Power Dissipation-Max (Abs) | 0.27 W | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
Terminal Form | GULL WING | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 40 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | feature-category | Small Signal |
feature-material | feature-process-technology | TMOS | |
feature-configuration | Dual | feature-channel-mode | Enhancement |
feature-channel-type | P|N | feature-number-of-elements-per-chip | 2 |
feature-maximum-drain-source-voltage-v | 20@P Channel|30@N Channel | feature-maximum-gate-source-voltage-v | ±12@P Channel|±20@N Channel |
feature-maximum-gate-threshold-voltage-v | 1.5 | feature-maximum-continuous-drain-current-a | 0.88@P Channel|0.25@N Channel |
feature-maximum-drain-source-resistance-mohm | [email protected]@P Channel|[email protected]@N Channel | feature-typical-gate-charge-vgs-nc | [email protected]@P Channel|0.9@5V@N Channel |
feature-typical-gate-charge-10v-nc | feature-typical-input-capacitance-vds-pf | 155@20V@P Channel|20@5V@N Channel | |
feature-typical-output-capacitance-pf | 25@P Channel|19@N Channel | feature-maximum-power-dissipation-mw | 270 |
feature-packaging | Tape and Reel | feature-rad-hard | |
feature-pin-count | 6 | feature-supplier-package | SC-88 |
feature-standard-package-name1 | SOT | feature-cecc-qualified | No |
feature-esd-protection | Yes | feature-military | No |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | No |
feature-svhc-exceeds-threshold | No |
配送
配送タイプ | 配送料 | リードタイム | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
---|---|---|
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電信送金 | 銀行手数料 US$30.00 を請求します。 |
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ペイパル | 4.0%のサービス料がかかります。 |
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クレジットカード | 3.5%のサービス料がかかります。 |
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ウエスタンユニオン | charge US.00 banking fee. |
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送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。
2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
パッキング
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ステップ1 :製品
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ステップ2 :真空包装
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ステップ3 :静電気防止袋
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ステップ4 :個包装
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ステップ5 :梱包箱
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ステップ6 :バーコード配送タグ
すべての製品は静電気防止袋に梱包されます。 ESD 帯電防止保護を備えた状態で出荷されます。
社外の ESD 梱包ラベルには、部品番号、ブランド、数量などの当社の情報が使用されます。
私たちは出荷前にすべての商品を検査し、すべての製品が良好な状態であることを確認し、部品が新しいオリジナルでデータシートと一致していることを確認します。
すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。 優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。
パーツポイント
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NTJD4158CT1G is a N-channel MOSFET designed for high-speed switching applications. It features low on-resistance, high drain current capability, and low gate charge. The chip is suitable for various power management and voltage regulation applications in electronic devices.
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Equivalent
Some equivalent products of the NTJD4158CT1G chip include the NDT3055L, NDF6N40ZG, and NTMFS4C05N. These are all N-channel Power MOSFETs with similar specifications and performance characteristics, making them suitable alternatives for various applications. -
Features
NTJD4158CT1G is a Small Signal Field-Effect Transistor (FET) with a low ON resistance, high current handling capability, and high input impedance. It is designed for applications requiring high power and efficiency, such as switching circuits and low noise amplifiers. Its compact size and high performance make it ideal for use in a wide range of electronic devices. -
Pinout
The NTJD4158CT1G is a P-channel MOSFET transistor with a pin count of 3. The gate (G) pin controls the flow of current between the source (S) and drain (D) pins. The drain pin is usually connected to the positive voltage source, while the source pin is connected to the load or ground. -
Manufacturer
NTJD4158CT1G is manufactured by ON Semiconductor Corporation. ON Semiconductor Corporation is a leading supplier of semiconductor-based solutions for a variety of electronic devices and industries, including automotive, industrial, and communications. The company specializes in providing power management, analog, and sensor products to help customers design and manufacture innovative products. -
Application Field
NTJD4158CT1G is commonly used in applications such as load switch, power management, and voltage regulation in various electronic devices like smartphones, tablets, laptops, and other portable devices. It is also used in power distribution systems, battery management, and voltage detection circuits due to its low on-resistance and high current-carrying capability. -
Package
The NTJD4158CT1G chip is available in a DPAK (TO-252) package, with a form of surface mount, and a size of 6.6mm x 6.6mm x 4.4mm.
データシート PDF
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最小注文数量は1個からとなります。
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最低国際配送料は0.00ドルから
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全商品365日品質保証
The parts we received exceeded our expectations in terms of quality.