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$5000ON NTHD3101FT1G
P-Channel ChipFET™ Power MOSFET and Schottky Diode -20V -4.4A 80mΩ
ブランド: ON Semiconductor, LLC
製造元部品 #: NTHD3101FT1G
データシート: NTHD3101FT1G Datasheet (PDF)
パッケージ/ケース: ChipFET-8
製品の種類: Single FETs, MOSFETs
NTHD3101FT1G 概要
Meet the NTHD3101FT1G, a high-performance P-channel MOSFET designed for precision power management in demanding applications. With a continuous drain current rating of -3.2A and a maximum drain-source voltage of -20V, this MOSFET offers exceptional efficiency and reliability for your circuit designs. Its low on-resistance of 0.064ohm and threshold voltage of -1.5V ensure accurate control of current flow, while the chipFET-8 package style with 8 pins simplifies integration into your PCB layout. Operating at temperatures up to 150°C, the NTHD3101FT1G can withstand harsh environmental conditions with ease. Choose this automotive-qualified MOSFET for dependable performance and long-term durability in your electronic systems
特徴
- This device features high speed and low noise.
- It offers fast switching times and high efficiency.
- NTHD3 101FT 1G is suitable for high power applications.
- The MOSFET has a high current rating and low RDS(on).
応用
- Energy-efficient solutions
- High-speed switching technology
- Integrated circuit design
仕様
| パラメータ | 価値 | パラメータ | 価値 |
|---|---|---|---|
| Status | Last Shipments | CAD Models | |
| Compliance | PbAHP | Package Type | ChipFET-8 |
| Case Outline | 1206A-03 | MSL Type | 1 |
| MSL Temp (°C) | 260 | Container Type | REEL |
| Container Qty. | 3000 | ON Target | N |
| Channel Polarity | P-Channel | Configuration | with Schottky Diode |
| V(BR)DSS Min (V) | -20 | VGS Max (V) | 8 |
| VGS(th) Max (V) | 1.5 | ID Max (A) | 3.2 |
| PD Max (W) | 1.1 | RDS(on) Max @ VGS = 2.5 V (mΩ) | 85 |
| RDS(on) Max @ VGS = 4.5 V (mΩ) | 64 | RDS(on) Max @ VGS = 10 V (mΩ) | - |
| Qg Typ @ VGS = 4.5 V (nC) | 8.6 | Qg Typ @ VGS = 10 V (nC) | 7.4 |
| Ciss Typ (pF) | 680 | Pricing ($/Unit) | Price N/A |
| Case/Package | SMD/SMT | Contact Plating | Tin |
| Number of Pins | 8 | Weight | 4.535924 g |
| Continuous Drain Current (ID) | 3.2 A | Current Rating | -3.2 A |
| Drain to Source Breakdown Voltage | -20 V | Drain to Source Resistance | 64 mΩ |
| Drain to Source Voltage (Vdss) | 20 V | Fall Time | 12.4 ns |
| Gate to Source Voltage (Vgs) | 8 V | Input Capacitance | 680 pF |
| Max Operating Temperature | 150 °C | Max Power Dissipation | 1.1 W |
| Min Operating Temperature | -55 °C | Nominal Vgs | -450 mV |
| Number of Elements | 1 | Packaging | Tape and Reel |
| Power Dissipation | 1.1 W | Rds On Max | 80 mΩ |
| Resistance | 64 MΩ | Rise Time | 11.7 ns |
| Schedule B | 8541290080 | Threshold Voltage | -1.5 V |
| Turn-Off Delay Time | 16 ns | Turn-On Delay Time | 5.8 ns |
| Voltage Rating (DC) | -20 V | Height | 1.05 mm |
| Length | 3.05 mm |
配送
| 配送タイプ | 配送料 | リードタイム | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間：送料は地域や国によって異なります。
支払い
| 支払条件 | ハンドフィー | |
|---|---|---|
 |
電信送金 | 銀行手数料 US$30.00 を請求します。 |
 |
ペイパル | 4.0％のサービス料がかかります。 |
 |
クレジットカード | 3.5％のサービス料がかかります。 |
 |
ウエスタンユニオン | charge US.00 banking fee. |
 |
送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。
2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
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パーツポイント
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The NTHD3101FT1G is a dual N-channel, high-speed power MOSFET chip designed for high-speed switching applications in power management and control circuits. It features a low gate charge and fast switching speed, making it ideal for use in power supplies, motor controls, and lighting applications.
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Equivalent
Some equivalent products of NTHD3101FT1G chip include AON6504, BUK7Y20-40E, and SUP53P06-20. These chips are also MOSFET transistors with similar specifications including voltage and current ratings. It is recommended to consult the datasheets of these chips for more detailed information and to ensure compatibility with your specific application. -
Features
NTHD3101FT1G is a high-speed, low input current diode with low capacitance and a low forward voltage drop. It is suitable for high-speed switching applications and has a unique, ultra-low profile packaging design for space-constrained applications. -
Pinout
The NTHD3101FT1G is a dual N-channel power MOSFET with a pin count of 6. Pin functions include Gate (1 and 4), Drain (3 and 6), and Source (2 and 5). This device is commonly used in high current switching applications. -
Manufacturer
The NTHD3101FT1G is manufactured by ON Semiconductor, which is a leading supplier of power management and analog semiconductor solutions. ON Semiconductor is a multinational company that provides a wide range of products for automotive, industrial, and consumer applications. They specialize in designing and manufacturing high-performance components for various industries worldwide. -
Application Field
The NTHD3101FT1G is commonly used in applications involving high-speed switching such as data communication, optical networking, and radar systems. Its low on-state resistance, low gate charge, and high breakdown voltage make it ideal for power management and protection circuits in these systems. -
Package
The NTHD3101FT1G chip is housed in a surface-mount DPAK package with a TO-252 form, measuring approximately 6.6mm x 6.2mm.
データシート PDF
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全商品365日品質保証
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