注文金額が
$5000
MJE210G
Bipolar (BJT) Transistor PNP 40 V 5 A 65MHz 15 W Through Hole TO-126
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![ISO9001](/img/about/iso9001.png)
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ブランド: onsemi
製造元部品 #: MJE210G
データシート: MJE210G データシート (PDF)
パッケージ/ケース: TO-225-3
RoHS ステータス:
在庫状況: 9,458 個、新しいオリジナル
製品の種類: Single Bipolar Transistors
Warranty: 1 Year Ovaga Warranty - Find Out More
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1
*すべての価格は米ドルです
数量 | 単価 | 外部価格 |
---|---|---|
1 | $0.534 | $0.534 |
10 | $0.442 | $4.420 |
30 | $0.398 | $11.940 |
100 | $0.354 | $35.400 |
500 | $0.327 | $163.500 |
1000 | $0.312 | $312.000 |
在庫あり: 9,458 PCS
MJE210G 概要
With a focus on precision engineering and high-quality materials, this transistor offers superior performance and longevity. Its compact size and easy installation make it perfect for DIY projects or commercial applications. The MJE210G sets a new standard for power transistors in the audio industry, delivering unrivaled performance and value
![](/files/uploads/product/b/3fcd103e-6da3-4a78-94a5-d1a6558c4356.webp)
特徴
- Piezoelectric Material - Ceramic Type
- Operating Temperature Range -40°C to +125°C
- Low Distortion - Low Noise Performance
- Fine Pitch Lead Frame for Small Size
- RoHS Compliant Packaging Available
- Surface Mountable for Easy Assembly
仕様
パラメータ | 価値 | パラメータ | 価値 |
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Manufacturer: | onsemi | Product Category: | Bipolar Transistors - BJT |
RoHS: | Details | Mounting Style: | Through Hole |
Package / Case: | TO-225-3 | Transistor Polarity: | PNP |
Configuration: | Single | Collector- Emitter Voltage VCEO Max: | 40 V |
Collector- Base Voltage VCBO: | 40 V | Emitter- Base Voltage VEBO: | 8 V |
Collector-Emitter Saturation Voltage: | 1.8 V | Maximum DC Collector Current: | 5 A |
Pd - Power Dissipation: | 15 W | Gain Bandwidth Product fT: | 65 MHz |
Minimum Operating Temperature: | - | Maximum Operating Temperature: | + 150 C |
Series: | MJE210 | Packaging: | Bulk |
Brand: | onsemi | Continuous Collector Current: | 5 A |
DC Collector/Base Gain hfe Min: | 70 | Height: | 11.04 mm |
Length: | 7.74 mm | Product Type: | BJTs - Bipolar Transistors |
Factory Pack Quantity: | 500 | Subcategory: | Transistors |
Technology: | Si | Width: | 2.66 mm |
Unit Weight: | 0.023986 oz | Package | Bulk |
Product Status | Active | Transistor Type | PNP |
Current - Collector (Ic) (Max) | 5 A | Voltage - Collector Emitter Breakdown (Max) | 40 V |
Vce Saturation (Max) @ Ib, Ic | 1.8V @ 1A, 5A | Current - Collector Cutoff (Max) | 100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 45 @ 2A, 1V | Power - Max | 15 W |
Frequency - Transition | 65MHz | Operating Temperature | -65°C ~ 150°C (TJ) |
Mounting Type | Through Hole | Package / Case | TO-225AA, TO-126-3 |
Supplier Device Package | TO-126 |
配送
配送タイプ | 配送料 | リードタイム | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
---|---|---|
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電信送金 | 銀行手数料 US$30.00 を請求します。 |
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ペイパル | 4.0%のサービス料がかかります。 |
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クレジットカード | 3.5%のサービス料がかかります。 |
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ウエスタンユニオン | charge US.00 banking fee. |
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送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。
2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
パッキング
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ステップ1 :製品
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ステップ2 :真空包装
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ステップ3 :静電気防止袋
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ステップ4 :個包装
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ステップ5 :梱包箱
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ステップ6 :バーコード配送タグ
すべての製品は静電気防止袋に梱包されます。 ESD 帯電防止保護を備えた状態で出荷されます。
社外の ESD 梱包ラベルには、部品番号、ブランド、数量などの当社の情報が使用されます。
私たちは出荷前にすべての商品を検査し、すべての製品が良好な状態であることを確認し、部品が新しいオリジナルでデータシートと一致していることを確認します。
すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。 優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。
パーツポイント
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The MJE210G is a transistor chip used for high-voltage, high-current switching applications. It is an NPN bipolar junction transistor (BJT) designed for amplification and switching purposes. The chip offers a collector current of 4A and a collector-emitter voltage of 40V. With its robust design and high-performance characteristics, the MJE210G chip is commonly used in power supply circuits, motor control, and other industrial applications.
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Equivalent
There are several equivalent products to the MJE210G chip, including MJE210GR, MJE210GRL, and MJE210GRL1G. These are all NPN silicon transistors primarily used in general-purpose amplifier and switching applications. -
Features
The MJE210G is a transistor with a PNP bipolar junction configuration. It has a collector current capability of 2A, a collector-base voltage of -40V, and a power dissipation of 20W. It is designed for general-purpose amplifier and switching applications. -
Pinout
The MJE210G is a bipolar junction transistor with a pin count of 3. Its pins are labeled as Collector (C), Base (B), and Emitter (E). The Collector terminal collects current, the Base terminal controls the current flow, and the Emitter terminal emits the current. -
Manufacturer
The MJE210G transistor is manufactured by ON Semiconductor. ON Semiconductor is a multinational semiconductor company that specializes in power management, sensor, and connectivity solutions. It designs and produces a wide range of products used in various industries, including automotive, industrial, computing, consumer, and aerospace. -
Application Field
The MJE210G is a bipolar power transistor typically used for switching and amplification, making it suitable for applications in audio amplifiers, power supplies, motor control, and other electronic devices requiring high power. -
Package
The MJE210G chip is a transistor that comes in a TO-225AA package form. The package dimensions are approximately 4.8mm x 4.6mm x 9.4mm.
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最小注文数量は1個からとなります。
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