Infineon IPD200N15N3GATMA1
Compared to the PG-TO252-3, RoHS model, the IPD200N15N3GATMA1 showcases a 40% reduction in R DS(on) and a 45% increase in figure of merit (FOM)
ブランド: Infineon
製造元部品 #: IPD200N15N3GATMA1
データシート: IPD200N15N3GATMA1 Datasheet (PDF)
パッケージ/ケース: PG-TO252-3
製品の種類: トランジスタ
IPD200N15N3GATMA1 概要
The IPD200N15N3GATMA1 is a power MOSFET transistor manufactured by Infineon Technologies. It is part of the OptiMOS 3 family and features a P-channel enhancement mode MOSFET with a voltage rating of 150V and a continuous drain current of 200A. The transistor is housed in a TO-252-3 package with a space-saving D2PAK outline.The IPD200N15N3GATMA1 is designed for use in high-current applications where efficiency and power density are critical, such as in motor control, power supplies, and server applications. With a low on-resistance of 2.2 mΩ and a low gate charge of 49 nC, this MOSFET offers high efficiency and switching performance, making it ideal for high-power applications.Infineon Technologies uses their advanced OptiMOS technology to optimize the trade-off between on-state resistance and switching performance, achieving a high level of efficiency and power density while minimizing losses. The IPD200N15N3GATMA1 also features excellent thermal performance, with a low thermal resistance to ensure reliable operation under high power loads.
特徴
- Fast switching in TrenchMOS technology
- Low capacitance
- Low electromagnetic interference
- Enhanced gate oxide integrity
- Temperature-compensated, positive temperature coefficient VGS
- High reliability, transient safe operating area
- Low on-resistance
- Low gate charge
- RoHS compliant
- Halogen-free
応用
- Power supply
- Motor control
- Industrial applications
- Automotive electronics
- Renewable energy systems
- Audio amplifiers
- LED lighting
- Switching applications
- Battery management systems
- UPS systems
仕様
パラメータ | 価値 | パラメータ | 価値 |
---|---|---|---|
functionalPacking | TAPE & REEL | addProductInfo | MS, RoHS compliant, non dry |
packageNameMarketing | DPAK | msl | 1 |
halogenFree | yes | customerInfo | STANDARD |
fgr | I62 | productClassification | COM |
productStatusInfo | active | hfgr | A |
packageName | PG-TO252-3 | pbFree | yes |
moistureProtPack | NON DRY | orderingCode | SP001127820 |
fourBlockPackageName | PG-TO252-3-313 | rohsCompliant | yes |
opn | IPD200N15N3GATMA1 | completelyPbFree | no |
sapMatnrSali | SP001127820 |
配送
配送タイプ | 配送料 | リードタイム | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
---|---|---|
電信送金 | 銀行手数料 US$30.00 を請求します。 | |
ペイパル | 4.0%のサービス料がかかります。 | |
クレジットカード | 3.5%のサービス料がかかります。 | |
ウエスタンユニオン | charge US.00 banking fee. | |
送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
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パッキング
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ステップ4 :個包装
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ステップ6 :バーコード配送タグ
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パーツポイント
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The IPD200N15N3GATMA1 is a chip that belongs to the power MOSFET family. It is designed to handle high power applications efficiently. With a voltage rating of 150 V and a maximum current rating of 200 A, it is suitable for various power switching applications. The chip offers low on-resistance and excellent thermal resistance, making it reliable and ideal for power control in industrial and automotive systems.
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Equivalent
The equivalent products of the IPD200N15N3GATMA1 chip are IPD60R280P7S and IPD062N08N3G. -
Features
The IPD200N15N3GATMA1 is a power MOSFET transistor with a voltage rating of 150V and a current rating of 200A. It offers low on-resistance, resulting in efficient power handling. The device also has a compact size and is designed for a variety of applications in power supplies, motor control, and inverters. -
Pinout
The IPD200N15N3GATMA1 is a power MOSFET. It has a pin count of 3 and is often utilized in applications such as motor control, power supplies, and inverters. -
Manufacturer
Infineon Technologies is the manufacturer of the IPD200N15N3GATMA1. It is a German semiconductor manufacturer specializing in the development of various electronic components and systems. -
Application Field
The IPD200N15N3GATMA1 is a power MOSFET transistor designed for high-performance applications. It can be used in various areas such as power supplies, motor control, lighting, and industrial automation. -
Package
The IPD200N15N3GATMA1 chip has a TO-252 package type. It is in a form of a single transistor and has a size of 6.5mm x 6.1mm.
データシート PDF
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