Infineon IPD110N12N3GATMA1
Power Field-Effect Transistor
ブランド: Infineon
製造元部品 #: IPD110N12N3GATMA1
データシート: IPD110N12N3GATMA1 Datasheet (PDF)
パッケージ/ケース: PG-TO252-3
RoHS ステータス:
在庫状況: 3933 個、新しいオリジナル
製品の種類: トランジスタ
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*すべての価格は米ドルです
数量 | 単価 | 外部価格 |
---|---|---|
1 | $1.901 | $1.901 |
10 | $1.674 | $16.740 |
30 | $1.532 | $45.960 |
100 | $1.195 | $119.500 |
500 | $1.130 | $565.000 |
1000 | $1.102 | $1102.000 |
In Stock:3933 PCS
IPD110N12N3GATMA1 概要
The IPD110N12N3GATMA1 is a N-channel power MOSFET produced by Infineon Technologies. It belongs to the OptiMOS 5 family of power MOSFETs, which are designed to provide low on-state resistance and high system efficiency in a wide range of applications, including motor control, power supplies, and DC-DC converters.The IPD110N12N3GATMA1 features a drain-source voltage of 120V, a continuous drain current of 110A, and a low on-resistance of 3mΩ. This MOSFET is housed in a TO-252 package, which is a small surface-mount package that allows for easy integration into PCB designs.One of the key features of the IPD110N12N3GATMA1 is its low gate charge, which enables fast switching speeds and efficient operation. This, combined with its low on-resistance, helps to minimize power losses and improve overall system performance.Additionally, this MOSFET is RoHS compliant, making it environmentally friendly and suitable for use in applications that require compliance with environmental regulations.
特徴
- 100V, 110A N-channel power MOSFET
- Low on-resistance RDS(on) of 6.5 mΩ
- Enhanced switching performance
- Optimized for high-current applications
- Advanced Trench Technology
- Halogen-free according to IEC 61249-2-21
- Qualified according to AEC Q101
- RoHS compliant
応用
- Automotive industry - used in electric vehicle powertrains, battery management systems, and charging stations
- Industrial automation - for motor control, power supplies, and robotics
- Solar energy - in inverters and power optimizers
- Telecommunications - for power amplifiers and base station power supplies
- Military and aerospace - in radar systems and electronic warfare applications
- Consumer electronics - for portable devices and home appliances
- Medical devices - in imaging systems and surgical equipment
仕様
パラメータ | 価値 | パラメータ | 価値 |
---|---|---|---|
functionalPacking | TAPE & REEL | addProductInfo | MS, RoHS compliant, non dry |
packageNameMarketing | DPAK | msl | 1 |
halogenFree | yes | customerInfo | STANDARD |
fgr | N59 | productClassification | COM |
productStatusInfo | active | hfgr | A |
packageName | PG-TO252-3 | pbFree | yes |
moistureProtPack | NON DRY | orderingCode | SP001127808 |
fourBlockPackageName | PG-TO252-3-313 | rohsCompliant | yes |
opn | IPD110N12N3GATMA1 | completelyPbFree | no |
sapMatnrSali | SP001127808 |
配送
配送タイプ | 配送料 | リードタイム | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
---|---|---|
電信送金 | 銀行手数料 US$30.00 を請求します。 | |
ペイパル | 4.0%のサービス料がかかります。 | |
クレジットカード | 3.5%のサービス料がかかります。 | |
ウエスタンユニオン | charge US.00 banking fee. | |
送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。
2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
パッキング
-
ステップ1 :製品
-
ステップ2 :真空包装
-
ステップ3 :静電気防止袋
-
ステップ4 :個包装
-
ステップ5 :梱包箱
-
ステップ6 :バーコード配送タグ
すべての製品は静電気防止袋に梱包されます。 ESD 帯電防止保護を備えた状態で出荷されます。
社外の ESD 梱包ラベルには、部品番号、ブランド、数量などの当社の情報が使用されます。
私たちは出荷前にすべての商品を検査し、すべての製品が良好な状態であることを確認し、部品が新しいオリジナルでデータシートと一致していることを確認します。
すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。 優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。
パーツポイント
-
The IPD110N12N3GATMA1 chip is a power MOSFET transistor designed for use in automotive applications. It has a voltage rating of 1200V and a current rating of 110A. This chip offers low on-resistance and high efficiency, making it suitable for use in electric vehicles and other power electronics systems.
-
Equivalent
An equivalent product of the IPD110N12N3GATMA1 chip is the FDP110N12N3GATM. -
Features
The IPD110N12N3GATMA1 is a power MOSFET transistor that is low on-resistance, suitable for high-current applications. It features a voltage rating of 1200V and a current rating of 100A, making it appropriate for various power conversion and control applications. -
Pinout
The IPD110N12N3GATMA1 has a pin count of 8. It is a power MOSFET that has a drain, source, and gate terminal. It is designed for applications requiring high power and efficiency in a compact package. -
Manufacturer
The manufacturer of the IPD110N12N3GATMA1 is Infineon Technologies. It is a global semiconductor company specializing in design, production, and marketing of various semiconductor solutions. Infineon Technologies primarily operates in the fields of automotive, industrial, power, and security applications, providing innovative products and technologies to customers worldwide. -
Application Field
The IPD110N12N3GATMA1 is a power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) designed for various applications where high power and low on-resistance are required. It can be used in areas such as power supplies, motor control systems, DC-DC converters, and other high-power switching applications. -
Package
The IPD110N12N3GATMA1 chip comes in a TO-252-3 package type, also known as DPAK (Plastic-Encapsulated Transistor). The form is a surface mount. Its size is compact, measuring approximately 6.5mm x 6.1mm x 2.5mm.
データシート PDF
私たちは高品質の製品、思いやりのあるサービス、販売後の保証を提供します
-
豊富な商品を取り揃えておりますので、お客様の様々なニーズにお応え致します。
-
最小注文数量は1個からとなります。
-
最低国際配送料は0.00ドルから
-
全商品365日品質保証
Limited amounts of stock available.