ON FDMA507PZ
P-Channel 20 V 7.8A (Ta) 2.4W (Ta) Surface Mount 6-MicroFET (2x2)
ブランド: ON Semiconductor, LLC
製造元部品 #: FDMA507PZ
データシート: FDMA507PZ Datasheet (PDF)
パッケージ/ケース: MLP EP
製品の種類: トランジスタ
FDMA507PZ 概要
This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-stade resistance. The MicroFET 2X2 package offers exceptional thermal perfomance for its physical size and is well suited to linear mode applications.
特徴
- Max rDS(on) = 24 mΩ at VGS = -5 V, ID = -7.8 A
- Max rDS(on) = 25 mΩ at VGS = -4.5 V, ID = -7 A
- Max rDS(on) = 35 mΩ at VGS = -2.5 V, ID = -5.5 A
- Max rDS(on) = 45 mΩ at VGS = -1.8 V, ID = -4 A
- Low Profile - 0.8 mm maximum - in the package MicroFET2X2 mm
- HBM ESD protection level > 3.2K V typical (Note3)
- Free from halogenated compounds and antimony oxides
- RoHS Compliant
応用
- This product is general usage and suitable for many different applications.
仕様
パラメータ | 価値 | パラメータ | 価値 |
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Source Content uid | FDMA507PZ | Pbfree Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
Package Description | 2 X 2 MM, 0.80 MM HEIGHT, HALOGEN FREE AND ROHS COMPLIANT, MICROFET-6 | Manufacturer Package Code | 511DB |
Reach Compliance Code | compliant | ECCN Code | EAR99 |
Factory Lead Time | 53 Weeks | Samacsys Manufacturer | onsemi |
Application | SWITCHING | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JESD-30 Code | S-PDSO-N6 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 6 |
Operating Mode | ENHANCEMENT MODE | Package Body Material | PLASTIC/EPOXY |
Package Shape | SQUARE | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | P-CHANNEL |
Surface Mount | YES | Terminal Finish | NICKEL PALLADIUM GOLD |
Terminal Form | NO LEAD | Terminal Position | DUAL |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Element Material | SILICON |
feature-category | Power MOSFET | feature-material | |
feature-process-technology | TMOS | feature-configuration | Single Quad Drain |
feature-channel-mode | Enhancement | feature-channel-type | P |
feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 20 |
feature-maximum-gate-source-voltage-v | ±8 | feature-maximum-gate-threshold-voltage-v | |
feature-maximum-continuous-drain-current-a | 7.8 | feature-maximum-drain-source-resistance-mohm | 24@5V |
feature-typical-gate-charge-vgs-nc | 30@5V | feature-typical-gate-charge-10v-nc | |
feature-typical-input-capacitance-vds-pf | 1515@10V | feature-typical-output-capacitance-pf | |
feature-maximum-power-dissipation-mw | 2400 | feature-packaging | Tape and Reel |
feature-rad-hard | feature-pin-count | 6 | |
feature-supplier-package | MLP EP | feature-standard-package-name1 | QFN |
feature-cecc-qualified | No | feature-esd-protection | Yes |
feature-military | No | feature-aec-qualified | No |
feature-aec-qualified-number | feature-auto-motive | No | |
feature-p-pap | No | feature-eccn-code | EAR99 |
feature-svhc | No |
配送
配送タイプ | 配送料 | リードタイム | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
---|---|---|
電信送金 | 銀行手数料 US$30.00 を請求します。 | |
ペイパル | 4.0%のサービス料がかかります。 | |
クレジットカード | 3.5%のサービス料がかかります。 | |
ウエスタンユニオン | charge US.00 banking fee. | |
送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。
2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
パッキング
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ステップ1 :製品
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ステップ2 :真空包装
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ステップ3 :静電気防止袋
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ステップ4 :個包装
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ステップ5 :梱包箱
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ステップ6 :バーコード配送タグ
すべての製品は静電気防止袋に梱包されます。 ESD 帯電防止保護を備えた状態で出荷されます。
社外の ESD 梱包ラベルには、部品番号、ブランド、数量などの当社の情報が使用されます。
私たちは出荷前にすべての商品を検査し、すべての製品が良好な状態であることを確認し、部品が新しいオリジナルでデータシートと一致していることを確認します。
すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。 優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。
パーツポイント
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The FDMA507PZ chip is an integrated circuit designed for frequency division multiple access (FDMA) applications. It is used to separate incoming signals into different frequency channels, allowing for efficient transmission and utilization of the available frequency spectrum. The chip offers reliable and robust performance, making it suitable for various wireless communication systems and devices.
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Features
The FDMA507PZ is a high-performance direct digital synthesizer (DDS) chip. It features a 32-bit accumulator and a 14-bit DAC for producing high-resolution frequency and phase signals. Its digital frequency and amplitude modulation capabilities, along with low power consumption, make it suitable for various applications in communications and instrumentation. -
Pinout
The FDMA507PZ is a dual MOSFET package with a pin count of 8. It is commonly used in power management applications where low on-resistance and high efficiency are important. The pin functions typically include gate, source, and drain connections for each MOSFET. -
Manufacturer
FDMA507PZ is a product manufactured by ON Semiconductor. The company is a leading supplier of semiconductor-based solutions, offering a broad range of products such as power management, sensors, and connectivity. ON Semiconductor serves various industries including automotive, industrial, consumer electronics, and healthcare. -
Application Field
The FDMA507PZ is a GaN (Gallium Nitride) transistor suitable for RF amplifier applications in various industries, including telecommunications, aerospace, defense, and radar systems. It can be utilized in frequency division multiple access (FDMA) systems, microwave radio systems, and other applications requiring high power amplification and efficiency. -
Package
The FDMA507PZ chip is available in a TO-220F package type, in an N-channel MOSFET transistor form, with a size of 10.2 mm x 5.2 mm.
データシート PDF
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全商品365日品質保証
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