ON FDB3682
N-Channel 100 V 6A (Ta), 32A (Tc) 95W (Tc) Surface Mount TO-263 (D2PAK)
ブランド: ON Semiconductor, LLC
製造元部品 #: FDB3682
データシート: FDB3682 Datasheet (PDF)
パッケージ/ケース: TO-263
製品の種類: トランジスタ
FDB3682 概要
N-Channel Power Trench® MOSFET, 100V, 32A, 36mΩ, The latest shielded gate PowerTrench® MOSFET, which combines a smaller QSYNC and soft reverse-recovery intrinsic body diode performance with fast switching, can substantially improve the efficiency of synchronous rectification.
特徴
- RDS(ON) = 32mΩ(Typ.), VGS = 10V, ID = 32A
- Qg(tot) = 18.5nC (Typ.), VGS = 10V
- Low Miller Charge
- Low QRR Body Diode
- UIS Capability (Single Pulse and Repetitive Pulse)
- Qualified to AEC Q101
応用
- This product is general usage and suitable for many different applications.
仕様
パラメータ | 価値 | パラメータ | 価値 |
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Source Content uid | FDB3682 | Pbfree Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
Package Description | TO-263AB, 3 PIN | Manufacturer Package Code | 418AJ |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 13 Weeks | Samacsys Manufacturer | onsemi |
Avalanche Energy Rating (Eas) | 55 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 100 V |
Drain Current-Max (ID) | 6 A | Drain-source On Resistance-Max | 0.036 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-263AB |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 175 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 245 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 95 W | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON | feature-category | Power MOSFET |
feature-material | feature-process-technology | TMOS | |
feature-configuration | Single | feature-channel-mode | Enhancement |
feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
feature-maximum-drain-source-voltage-v | 100 | feature-maximum-gate-source-voltage-v | ±20 |
feature-maximum-gate-threshold-voltage-v | 4 | feature-maximum-continuous-drain-current-a | 6 |
feature-maximum-drain-source-resistance-mohm | 36@10V | feature-typical-gate-charge-vgs-nc | 18.5@10V |
feature-typical-gate-charge-10v-nc | 18.5 | feature-typical-input-capacitance-vds-pf | 1250@25V |
feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 95000 | |
feature-packaging | Tape and Reel | feature-rad-hard | |
feature-pin-count | 3 | feature-supplier-package | D2PAK |
feature-standard-package-name1 | TO-263 | feature-cecc-qualified | No |
feature-esd-protection | feature-military | No | |
feature-aec-qualified | No | feature-aec-qualified-number | |
feature-auto-motive | No | feature-p-pap | No |
feature-eccn-code | EAR99 | feature-svhc | Yes |
feature-svhc-exceeds-threshold | Yes |
配送
配送タイプ | 配送料 | リードタイム | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
---|---|---|
電信送金 | 銀行手数料 US$30.00 を請求します。 | |
ペイパル | 4.0%のサービス料がかかります。 | |
クレジットカード | 3.5%のサービス料がかかります。 | |
ウエスタンユニオン | charge US.00 banking fee. | |
送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。
2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
パッキング
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ステップ1 :製品
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ステップ2 :真空包装
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ステップ3 :静電気防止袋
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ステップ4 :個包装
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ステップ5 :梱包箱
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ステップ6 :バーコード配送タグ
すべての製品は静電気防止袋に梱包されます。 ESD 帯電防止保護を備えた状態で出荷されます。
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すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。 優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。
パーツポイント
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The FDB3682 chip is an integrated circuit used for power management in electronic devices. It provides efficient control over power distribution, voltage regulation, and current flow in order to optimize device performance and reliability. The chip is commonly used in various applications, such as smartphones, tablets, and other portable devices.
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Equivalent
The equivalent products of the FDB3682 chip are FBQû7124B, FSQû710A, FSQû711, FSQû745, and FSQû745R. -
Features
FDB3682 is a power MOSFET with a low on-state resistance and high current handling capability. It is designed for use in high voltage applications and offers reliable switching performance. It features a built-in diode for reverse current protection and has a compact size for space-saving integration. -
Pinout
The FDB3682 is a MOSFET transistor with a pin count of 6. Its function is to amplify and switch electronic signals or power in electronic circuits. -
Manufacturer
FDB3682 is a power MOSFET transistor manufactured by Fairchild Semiconductor, which is a global semiconductor supplier. Fairchild Semiconductor is a company that designs, produces, and sells a wide range of electronic components, including power management devices, discrete semiconductors, and integrated circuits. -
Application Field
The FDB3682 is a high-voltage power-switching transistor designed for a variety of applications. Its use is commonly found in switch mode power supplies, lighting applications, motor control circuits, and other high-power applications where efficient power switching is required. -
Package
The FDB3682 chip comes in a DFN-8 package type, in the form of a square-shaped chip with a size of approximately 3mm x 3mm.
データシート PDF
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最小注文数量は1個からとなります。
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