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ON FCPF11N60F
N-Channel 600 V 11A (Tc) 36W (Tc) Through Hole TO-220F-3
ブランド: ON Semiconductor, LLC
製造元部品 #: FCPF11N60F
データシート: FCPF11N60F Datasheet (PDF)
パッケージ/ケース: TO-220F
製品の種類: トランジスタ
FCPF11N60F 概要
SuperFET® MOSFET is the first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Super-FET FRFET® MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability.
特徴
- 600 V @ TJ = 150°C
- Typ. RDS(on) = 320 mΩ
- Fast Recovery Type (trr = 120 ns)
- Ultra Low Gate Charge (Typ. Qg = 40 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 95 pF)
- 100% Avalanche Tested
- RoHS compliant
応用
- AC-DC Power Supplies
仕様
| パラメータ | 価値 | パラメータ | 価値 |
|---|---|---|---|
| Manufacturer: | onsemi | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | Through Hole | Package / Case: | TO-220-3 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 600 V | Id - Continuous Drain Current: | 11 A |
| Rds On - Drain-Source Resistance: | 380 mOhms | Vgs - Gate-Source Voltage: | - 30 V, + 30 V |
| Vgs th - Gate-Source Threshold Voltage: | 3 V | Qg - Gate Charge: | 52 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
| Pd - Power Dissipation: | 125 W | Channel Mode: | Enhancement |
| Tradename: | SuperFET FRFET | Series: | FCPF11N60F |
| Packaging: | Tube | Brand: | onsemi / Fairchild |
| Configuration: | Single | Fall Time: | 56 ns |
| Forward Transconductance - Min: | 9.7 S | Height: | 16.07 mm |
| Length: | 10.36 mm | Product Type: | MOSFET |
| Rise Time: | 98 ns | Factory Pack Quantity: | 50 |
| Subcategory: | MOSFETs | Transistor Type: | 1 N-Channel |
| Type: | N-Channel MOSFET | Typical Turn-Off Delay Time: | 119 ns |
| Typical Turn-On Delay Time: | 34 ns | Width: | 4.9 mm |
| Unit Weight: | 0.068784 oz | feature-category | Power MOSFET |
| feature-material | feature-process-technology | SuperFET | |
| feature-configuration | Single | feature-channel-mode | Enhancement |
| feature-channel-type | N | feature-number-of-elements-per-chip | 1 |
| feature-maximum-drain-source-voltage-v | 600 | feature-maximum-gate-source-voltage-v | ±30 |
| feature-maximum-gate-threshold-voltage-v | 5 | feature-maximum-continuous-drain-current-a | 11 |
| feature-maximum-drain-source-resistance-mohm | 380@10V | feature-typical-gate-charge-vgs-nc | 40@10V |
| feature-typical-gate-charge-10v-nc | 40 | feature-typical-input-capacitance-vds-pf | 1148@25V |
| feature-typical-output-capacitance-pf | feature-maximum-power-dissipation-mw | 36000 | |
| feature-packaging | Tube | feature-rad-hard | |
| feature-pin-count | 3 | feature-supplier-package | TO-220FP |
| feature-standard-package-name1 | TO | feature-cecc-qualified | No |
| feature-esd-protection | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | Yes |
| feature-svhc-exceeds-threshold | Yes |
配送
| 配送タイプ | 配送料 | リードタイム | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間：送料は地域や国によって異なります。
支払い
| 支払条件 | ハンドフィー | |
|---|---|---|
 |
電信送金 | 銀行手数料 US$30.00 を請求します。 |
 |
ペイパル | 4.0％のサービス料がかかります。 |
 |
クレジットカード | 3.5％のサービス料がかかります。 |
 |
ウエスタンユニオン | charge US.00 banking fee. |
 |
送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
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2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
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パーツポイント
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FCPF11N60F is a MOSFET chip primarily used for power switching applications. It can handle a maximum voltage of 600V and a continuous drain current of 11A. This chip is designed for efficient power conversion and features low on-resistance, high-speed switching capabilities, and low gate charge. It also includes built-in protection features such as over-temperature and short-circuit protection.
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Equivalent
There are currently no direct equivalent products to the FCPF11N60F chip. However, similar alternatives with comparable specifications and performance can be found from other manufacturers, such as Infineon's CoolMOS, Fairchild's SuperFET, or ON Semiconductor's High Voltage Power MOSFETs. -
Features
The FCPF11N60F is a power MOSFET with a drain-source voltage rating of 600V and a current rating of 11A. It features low on-resistance, fast switching speed, and high avalanche energy capability. It is housed in a TO-220F package, making it suitable for various industrial and consumer applications requiring high-performance power switching. -
Pinout
The FCPF11N60F is a power MOSFET with a pin count of 3. The three pins are Gate, Source, and Drain. The Gate pin controls the switching of the MOSFET, while the Source and Drain pins control the flow of current through the device. -
Manufacturer
The manufacturer of the FCPF11N60F is Fairchild Semiconductor. It is a global company that specializes in the design, development, and production of power semiconductors and integrated circuits. -
Application Field
The FCPF11N60F is a high-voltage Power MOSFET suitable for various applications, including power supplies, motor control, DC-DC converters, and inverters. -
Package
The FCPF11N60F chip is available in a TO-220F package type, has a single form, and its size is approximately 10.16mm x 3.81mm x 20.57mm.
データシート PDF
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全商品365日品質保証
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