注文金額が
$5000
BSM300GA120DN2
Transistor Module for IGBT Transistor with N-Channel, 62MM-2 Tray
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
![DUNS](/img/about/duns.png)
ブランド: Infineon
製造元部品 #: BSM300GA120DN2
データシート: BSM300GA120DN2 データシート (PDF)
パッケージ/ケース: 62 mm
RoHS ステータス:
在庫状況: 6,378 個、新しいオリジナル
製品の種類: IGBT Modules
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*すべての価格は米ドルです
数量 | 単価 | 外部価格 |
---|---|---|
1 | $425.008 | $425.008 |
200 | $164.472 | $32894.400 |
500 | $158.692 | $79346.000 |
1000 | $155.836 | $155836.000 |
在庫あり: 6,378 PCS
BSM300GA120DN2 概要
Infineon's BSM300GA120DN2 power semiconductor module is characterized by its compact and lightweight design, making it easy to integrate into existing systems. Its low switching losses and high efficiency contribute to overall system performance and energy efficiency, while its long lifespan and high reliability reduce maintenance requirements and downtime. With a dual IGBT module, 300A current rating, and 1200V voltage rating, this module is well-suited for electric vehicle drives, industrial drives, and renewable energy systems, offering exceptional power handling capabilities. The advanced thermal management system ensures efficient heat dissipation, enabling reliable operation even in demanding operating conditions, while built-in overcurrent and overtemperature protection circuits provide additional security for the module and the system
![BSM300GA120DN2 BSM300GA120DN2](/files/uploads/product/b/ef0b30851bfd4ee0b889cbb15c898357.webp)
特徴
- High power density for high efficiency applications
- Wide operating temperature range from -40°C to 125°C
- High surge current capability for safe operation
- Suitable for renewable energy systems, industrial drives, and power supplies
応用
- Efficient energy solutions
- Reliable power systems
- Advanced technology uses
仕様
パラメータ | 価値 | パラメータ | 価値 |
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Product Category | IGBT Modules | RoHS | Details |
Product | IGBT Silicon Modules | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 1.2 kV | Collector-Emitter Saturation Voltage | 2.5 V |
Continuous Collector Current at 25 C | 430 A | Gate-Emitter Leakage Current | 320 nA |
Pd - Power Dissipation | 2.5 kW | Package / Case | 62 mm |
Minimum Operating Temperature | - 40 C | Maximum Operating Temperature | + 150 C |
Brand | Infineon Technologies | Height | 36.5 mm |
Length | 106.4 mm | Maximum Gate Emitter Voltage | 20 V |
Mounting Style | Chassis Mount | Product Type | IGBT Modules |
Factory Pack Quantity | 10 | Subcategory | IGBTs |
Technology | Si | Width | 61.4 mm |
Part # Aliases | SP000100730 BSM300GA120DN2HOSA1 |
配送
配送タイプ | 配送料 | リードタイム | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
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電信送金 | 銀行手数料 US$30.00 を請求します。 |
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ペイパル | 4.0%のサービス料がかかります。 |
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クレジットカード | 3.5%のサービス料がかかります。 |
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ウエスタンユニオン | charge US.00 banking fee. |
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送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。
2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
パッキング
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ステップ1 :製品
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ステップ2 :真空包装
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ステップ3 :静電気防止袋
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ステップ4 :個包装
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ステップ5 :梱包箱
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ステップ6 :バーコード配送タグ
すべての製品は静電気防止袋に梱包されます。 ESD 帯電防止保護を備えた状態で出荷されます。
社外の ESD 梱包ラベルには、部品番号、ブランド、数量などの当社の情報が使用されます。
私たちは出荷前にすべての商品を検査し、すべての製品が良好な状態であることを確認し、部品が新しいオリジナルでデータシートと一致していることを確認します。
すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。 優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。
パーツポイント
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The BSM300GA120DN2 is a power module chip used for high-power applications. It is designed for efficient energy conversion in various industries, including industrial, renewable energy, and transportation. The chip offers high power density, reliable performance, and advanced protection features. It is suitable for applications such as motor drives, inverters, and electric vehicle systems.
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Equivalent
Some equivalent products of the BSM300GA120DN2 chip are the SEMIKRON SEMITRANS 3 series modules and the Infineon IGBT modules of the 1EDI series, such as the FF200R12KE3 and FF300R12KE3. -
Features
The BSM300GA120DN2 is a silicon carbide power module designed for high-power applications. Key features include a voltage rating of 1200V, a current rating of 300A, low on-state resistance, high switching frequency, robust and reliable design, and integrated temperature and current sensors for precise control and protection. -
Pinout
The BSM300GA120DN2 is an IGBT power module, specifically used in three-phase inverters. It has 7 pins, including gate-emitter and collector-emitter pins for each of its 3 IGBTs. The module is designed to convert direct current (DC) into alternating current (AC) in a variety of applications, such as motor drives and industrial equipment. -
Manufacturer
Infineon Technologies AG is the manufacturer of the BSM300GA120DN2. It is a German semiconductor manufacturer that specializes in manufacturing power semiconductors, microcontrollers, and integrated circuits for various industries, including automotive, industrial, and consumer electronics. -
Application Field
The BSM300GA120DN2 is a semiconductor device that can be used in various application areas, including renewable energy systems such as wind turbines and solar power, electric vehicle charging stations, industrial automation and robotics, and power supplies for data centers. -
Package
The BSM300GA120DN2 chip has a package type of Power Module, a form of Non-insulated, and a size of 42mm x 150mm.
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最小注文数量は1個からとなります。
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全商品365日品質保証