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SOT-363-6
(合計 208 個のパーツ)| 製造元部品番号 | 説明 | メーカー | 在庫あり | 手術 |
|---|---|---|---|---|
| 2N7002DW-7-F | 2N7002DW-7-F Transistor | Diodes Incorporated | 3,336 | BOMに追加 |
| 2N7002DWA-7 | Small-Signal N-Channel Metal-oxide Semiconductor FET | Diodes Incorporated | 9,458 | BOMに追加 |
| SI1912EDH | High Power N-Channel FET | vishay | 5,818 | BOMに追加 |
| PSA-545+ | PSA-545+ RF Amplifier | Mini-Circuits | 9,458 | BOMに追加 |
| BCR119S | Bipolar Transistors with Pre-Bias | Infineon Technologies | 6,334 | BOMに追加 |
| BCM856S | BCM856S, PNPAF65V100mASOT363, Reel | infineon | 8,065 | BOMに追加 |
| BCM846S | Described as a Trans GP BJT NPN, BCM846S offers a maximum power dissipation of 250mW, making it suitable for a variety of automotive electronics | infineon | 5,284 | BOMに追加 |
| AG201-63G | Signal booster with 6000MHz bandwidth and 11dB gain at 900MHz | qorvo | 8,264 | BOMに追加 |
| MGA-86563-BLKG | MGA-86563-BLKG RF amplifier MMIC IC from AVAGO TECHNOLOGIES | Broadcom Limited | 7,810 | BOMに追加 |
| RF6C055BC | Product Description: Middle Power MOSFET for PCH with -20V and -5.5A | ROHM Semiconductor | 8,965 | BOMに追加 |
| DMN63D8LDWQ-7 | Device for Weak Electrical Signals | Diodes Incorporated | 9,458 | BOMに追加 |
| DMN62D0UDW-7 | oxide semiconductor FET, 2-element, 0.35A I(D), 60V | Diodes Incorporated | 5,048 | BOMに追加 |
| BSS138DWQ-7 | This SOT-363 Mosfet has a maximum current rating of 0.2A | Diodes Incorporated | 7,038 | BOMに追加 |
| BSD235NH6327XTSA1 | N-channel MOSFET with 20V voltage rating and 950mA current capacity in SOT-363-6 package | Infineon | 9,458 | BOMに追加 |
| BSD223PH6327XTSA1 | DPAK-2 P-Ch MOSFET | Infineon | 9,458 | BOMに追加 |
| BSS138DW-7-F | MOSFET Operating temperature: -55...150 °C Housing type: SOT-363 Polarity: N/N Variants: Enhancement mode Power dissipation: 0.2 W | DIODES INC | 7,417 | BOMに追加 |
| BGA2817,115 | RF Amplifier IC General Purpose 0Hz ~ 2.2GHz 6-TSSOP | NXP | 9,458 | BOMに追加 |
| DMN53D0LDW-7 | Drain Source Voltage Vds:50V; Continuous Drain Current Id:360Ma; Product Range:-; Qualification:-; Msl:- Rohs Compliant: No |Diodes Inc. DMN53D0LDW-7. | DIODES INC | 5,249 | BOMに追加 |
| DMG6301UDW-7 | Transistor MOSFET Array Dual N-CH 25V 0.24A 6-Pin SOT-363 T/R | DIODES INC | 7,590 | BOMに追加 |
| DMN63D8LDW-7 | DMN63D8LDW-7 is a package containing two N-Channel MOSFETs with a continuous drain current rating of 220mA at 30V and a power dissipation of 300mW | Diodes Incorporated | 9,111 | BOMに追加 |
| UM6K33NTN | Small Signal Field-Effect Transistor, 0.2A I(D), 50V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, UMT6, SC-88, 6 PIN | ROHM Semiconductor | 5,402 | BOMに追加 |
| US6M2TR | Mosfet Array 30V, 20V 1.5A, 1A 1W Surface Mount TUMT6 | ROHM Semiconductor | 5,623 | BOMに追加 |
| SI1902DL-T1-E3 | Dual N-Channel 20 V 0.385 Ohms Surface Mount Power Mosfet - SOT-363 | VISHAY INTERTECHNOLOGY INC | 6,258 | BOMに追加 |
| SI1563DH-T1-E3 | MOSFET; Complementary 20V Low-Threshold MOSFET | Vishay | 7,068 | BOMに追加 |
| MGA-82563-TR1G | 100MHz - 6000MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER, LEAD FREE, ULTRA MINIATURE, SC-70, SOT-363, 6 PIN | Broadcom Limited | 6,479 | BOMに追加 |
| DRDNB21D-7 | Complex Array For Dual Relay Driver Automotive 6-Pin SOT-363 T/R | Diodes Incorporated | 9,458 | BOMに追加 |
| DMMT3904W-7-F | Trans GP BJT NPN 40V 0.2A 6Pin SOT363 | Diodes Inc DMMT3904W-7-F | DIODES INC | 6,987 | BOMに追加 |
| DMN601DWK-7 | ROHS compliant 500mA MOSFET operating at 2.5V@1mA | Diodes Incorporated | 9,458 | BOMに追加 |
| DMC2004DWK-7 | Trans MOSFET N/P-CH 20V 0.54A/0.43A Automotive 6-Pin SOT-363 T/R | Diodes Incorporated | 9,458 | BOMに追加 |
| BSS84DW-7-F | BSS84DW Series 50 V 10 Ohm Dual P-Channel Enhancement Mode Transistor SOT-363 | DIODES INC | 5,358 | BOMに追加 |
| BAS21TW-7 | This diode has a voltage rating of 250 V and power dissipation of 300 mW, making it suitable for various signal processing tasks | Diodes Incorporated | 9,458 | BOMに追加 |
| BC846PN | Bipolar Transistors - BJT | INFINEON TECHNOLOGIES AG | 5,162 | BOMに追加 |
| TQP369184 | RF Amplifier DC-6GHz NF 3.9dB Gain 20.6dB 50 Ohm | Qorvo | 9,458 | BOMに追加 |
| SGC4563Z | RF Amplifier .05-4GHz SSG 20.5dB NF 1.7dB SiGe | Qorvo | 9,458 | BOMに追加 |
| XS5A1T4157GWH | TSSOP-6 Analog Switches/Multiplexers featuring SPDT Configuration and 7.7Ω Resistance, ROHS Compliant | Nexperia | 2,599 | BOMに追加 |
| NXB0101GWH | SOT363 package for compact designs | Nexperia | 6,923 | BOMに追加 |
| SGA-4563Z | High-performance SiGe RF Amplifier with 20.2dB SSG and 2.4dB NF for frequencies up to 2.5GHz | Qorvo | 7,082 | BOMに追加 |
| SGA-3563Z | The SGA3563Z amplifier is a versatile device with a single function, making it ideal for a variety of applications | Qorvo | 2,775 | BOMに追加 |
| SGA-4363Z | Low Noise Figure and High Linearity for Reliable Performance | Qorvo | 3,539 | BOMに追加 |
| SQ1464EEH-T1_GE3 | Low-loss MOSFET solution for high-frequency designs | Vishay | 9,458 | BOMに追加 |
| SQ1421EDH-T1_GE3 | P-Channel transistor for 60V applications | Vishay | 9,458 | BOMに追加 |
| SI1902CDL-T1-BE3 | Low-on-state voltage and high-current capabilities for efficient switchi | Vishay | 9,458 | BOMに追加 |
| SI1553CDL-T1-BE3 | Mosfet Array 20V 700mA (Ta), 700mA (Tc), 400mA (Ta), 500mA (Tc) 290mW (Ta), 340mW (Tc) Surface Mount SC-70-6 | Vishay | 9,458 | BOMに追加 |
| SQ1912EH-T1_GE3 | Features two N-channel MOSFETs in SC-70-6 package | Vishay | 9,458 | BOMに追加 |
| SI1427EDH-T1-BE3 | Reliable P-channel MOSFET for efficient power control | Vishay | 9,458 | BOMに追加 |
| SQ1912AEEH-T1_GE3 | MOSFET N Ch 20Vds 12Vgs AEC-Q101 Qualified | Vishay | 9,458 | BOMに追加 |
| SI1480BDH-T1-GE3 | Compact SO-package ideal for space-restricted design | Vishay | 9,458 | BOMに追加 |
| DSS4240Y-7 | Robust and reliable three-kilohm SOT-package for precision circuit | Diodes Incorporated | 9,892 | BOMに追加 |
| MCH6001-TL-E | RF Transistor 2 NPN (Dual) 8V 150mA 16GHz 600mW Surface Mount 6-MCPH | onsemi | 9,458 | BOMに追加 |
| NVJS4151PT1G | P-Channel 20 V 3.2A (Ta) 1.2W (Ta) Surface Mount SC-88/SC70-6/SOT-363 | onsemi | 9,458 | BOMに追加 |
その他のパッケージ