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SOT-363-6
(合計 208 個のパーツ)| 製造元部品番号 | 説明 | メーカー | 在庫あり | 手術 |
|---|---|---|---|---|
| NST65010MW6T1G | The NST65010MW6T1G, an automotive-grade PNP bipolar junction transistor, offers a voltage handling capability of 65 volts and a current rating of 0 | onsemi | 9,458 | BOMに追加 |
| SBC847BPDW1T1G | Bipolar Transistors - BJT SS GP XSTR DUAL 45V | onsemi | 9,458 | BOMに追加 |
| SBC856BDW1T1G | Bipolar (BJT) Transistor Array 2 PNP (Dual) 65V 100mA 100MHz 380mW Surface Mount SC-88/SC70-6/SOT-363 | onsemi | 9,458 | BOMに追加 |
| DZDH0401DW-7 | Ideal solution for diode control at elevated temperatures | Diodes Incorporated | 9,458 | BOMに追加 |
| D5V0F4U6S-7 | High-reliability TVS diode array for robust signal protection | Diodes Incorporated | 7,820 | BOMに追加 |
| DMN3190LDW-7 | N-Channel Silicon Metal-oxide Semiconductor FET | Diodes Incorporated | 6,152 | BOMに追加 |
| UM6K34NTCN | MOSFET drive voltage of 10V | ROHM Semiconductor | 8,297 | BOMに追加 |
| SSM6N7002KFU,LF | Dual-function MOSFET for small signals | Toshiba | 9,458 | BOMに追加 |
| UMB10NTN | Dual transistor module for high-performance analog designs, ideal for industrial automation and IoT applications | ROHM Semiconductor | 5,862 | BOMに追加 |
| UMD3NTR | Pre-Biased Bipolar Transistors NPN/PNP 50V 50MA | ROHM Semiconductor | 5,818 | BOMに追加 |
| SQ1470EH-T1-GE3 | Available in tape and reel packaging for convenient handling | Vishay | 9,458 | BOMに追加 |
| SGL0363Z | Wide band low power amplifier for RF/Microwave applications | Qorvo | 9,458 | BOMに追加 |
| SGC4263Z | Halogen free material | qorvo | 5,165 | BOMに追加 |
| SGC2463Z | Compact and efficient SSG-based RF amplifier offering excellent noise figure performance | Qorvo | 9,458 | BOMに追加 |
| SGC2363Z | Small outline transistor - SOT-363 package | Qorvo | 9,458 | BOMに追加 |
| SI1539DL-T1-E3 | Suggested alternative MOSFET: 78-SI1539CDL-T1-GE3 | Vishay | 8,927 | BOMに追加 |
| SI1555DL-T1-GE3 | Exchange: MOSFET alternate option 78-SI1553CDL-T1-GE3 | Vishay | 9,458 | BOMに追加 |
| SI1499DH-T1-E3 | 6-Pin SC-70 Package P-Channel MOSFET with 8V Voltage Rating | Vishay | 9,458 | BOMに追加 |
| SI1414DH-T1-GE3 | 414DH transistor | Vishay | 9,458 | BOMに追加 |
| SI1922EDH-T1-GE3 | Description: SI1922EDH-T1-GE3 MOSFETs, with characteristics including 20V voltage rating, 1 | VISHAY INTERTECHNOLOGY INC | 7,727 | BOMに追加 |
| SI1563EDH-T1-E3 | Key Features: Small-Signal N/P-Channel MOSFET, Operating at 20V, Supporting 1.13A and 0.88A Currents, SC-70 Package | Vishay | 6,975 | BOMに追加 |
| SI1403CDL-T1-GE3 | Designed for use in various electronic applications requiring P-Channel MOSFETs | VISHAY SILICONIX | 8,144 | BOMに追加 |
| RUL035N02TR | The RUL035N02TR, part of the RUL035N02 Series, is an SMT N-channel power MOSFET engineered to operate efficiently in various electronic systems | ROHM Semiconductor | 8,024 | BOMに追加 |
| ECG001F-G | Low power, high frequency amplifier | qorvo | 9,038 | BOMに追加 |
| DCX123JU-7-F | A high-performance bipolar transistor for small signal application | DIODES INC | 5,582 | BOMに追加 |
| DCX114EU-7-F | DCX114EU-7-F is a dual-element transistor, combining NPN and PNP configurations, suitable for various electronic applications." | DIODES INC | 9,708 | BOMに追加 |
| DRTR5V0U4S-7 | 5A 200mW ESD Suppressors | Diodes Incorporated | 5,932 | BOMに追加 |
| DDC114EU-7-F | Transistor, NPN, 50V Voltage, 100mA Current, SOT-363 Package | DIODES INC | 5,118 | BOMに追加 |
| DMN2004DWK-7 | Ultra-low-power consumption for battery-friendly devices | DIODES INC | 6,581 | BOMに追加 |
| DMN66D0LDW-7 | Silicon Metal-oxide Semiconductor FET | Diodes Incorporated | 9,458 | BOMに追加 |
| DMN65D8LDW-7 | With a voltage tolerance of 60V | Diodes Incorporated | 9,458 | BOMに追加 |
| D3V3F4U6S-7 | 5A@(8/20us) 10V 6V 3.3V SOT-363 | Diodes Incorporated | 6,736 | BOMに追加 |
| BSS8402DW-7-F | 0.115A Drain Current | Diodes Incorporated | 7,440 | BOMに追加 |
| BSS138DW-7 | Transistor MOSFET with N-channel configuration, engineered for switching operations with a 50V voltage threshold and a current rating of 0 | Diodes Incorporated | 6,207 | BOMに追加 |
| BSS84DW | SOT-363 BSS84DW MOSFETs ROHS | PANJIT | 6,728 | BOMに追加 |
| BAS70DW-04-7-F | Surface mount technology | DIODES INC | 7,327 | BOMに追加 |
| BCR48PN | BCR48PN, a small signal bipolar transistor, has a collector current of 0 | Infineon | 9,458 | BOMに追加 |
| BCR133S | High-Gain NPN Transistor with 50V Collector-Emitter Breakdown Voltage | infineon | 6,596 | BOMに追加 |
| BCR141S | Bipolar Transistor BCR141S: NPN Type with 0.1A Collector Current and 50V Collector-Emitter Voltage Rating | SIEMENS A G | 7,398 | BOMに追加 |
| BCR108S | Biased Bipolar Transistors | INFINEON TECHNOLOGIES AG | 6,609 | BOMに追加 |
| BCR185S | PNP Silicon Transistor with 2-Element Configuration in SOT-363 Package | infineon | 7,634 | BOMに追加 |
| BCR198S | Transistor BCR198S is a PNP Bipolar Junction Transistor (BJT) designed for automotive applications | infineon | 6,186 | BOMに追加 |
| BCR135S | The BCR135S comes in a 6-pin SOT-363 package, making it compact and easy to integrate into electronic circuits | INFINEON TECHNOLOGIES AG | 6,361 | BOMに追加 |
| BCR35PN | Bipolar Transistors - Pre-Biased | INFINEON TECHNOLOGIES AG | 7,272 | BOMに追加 |
| BCR10PN | Small signal bipolar transistor | SIEMENS A G | 8,517 | BOMに追加 |
| BCR116S | BCR116S is a bipolar transistor with pre-biasing | INFINEON TECHNOLOGIES AG | 8,857 | BOMに追加 |
| BCR148S | Transistor with 0.07A DC Current Gain and 50V Collector-Base Voltage | infineon | 9,994 | BOMに追加 |
| BC846AS-7 | BC846AS-7, labeled as a Bipolar Transistor (BJT), exhibits the ability to sustain currents reaching 100mA and voltages of 65V | Diodes Incorporated | 9,458 | BOMに追加 |
| AG302-63G | Boosts signal strength by 15.5dB at 900MHz | qorvo | 8,568 | BOMに追加 |
| ABA-52563-TR1G | High Frequency Amplifier | Broadcom Limited | 7,932 | BOMに追加 |
その他のパッケージ