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SOT-363-6
(合計 208 個のパーツ)| 製造元部品番号 | 説明 | メーカー | 在庫あり | 手術 |
|---|---|---|---|---|
| ZXCT210BDW-7 | High-quality CMOS voltage output for precise contro | Diodes Incorporated | 2,387 | BOMに追加 |
| ZXCT199A2DW-7 | Compact current sensing for high-frequency design | Diodes Incorporated | 2,470 | BOMに追加 |
| ZXCT210QBDW-7 | Accurate and precise voltage detection for demanding industries | Diodes Incorporated | 6,097 | BOMに追加 |
| ZXCT213QBDW-7 | Precise voltage monitoring for automotive application | Diodes Incorporated | 6,465 | BOMに追加 |
| ZXCT211QBDW-7 | Description: Compact module for high-voltage applications, perfect for powering device | Diodes Incorporated | 4,252 | BOMに追加 |
| SI1922EDH-T1-BE3 | Compact and efficient SC--package ensures minimal footprint requirements | Vishay | 9,458 | BOMに追加 |
| CMKD6263 TR PBFREE | High-reliability Schottky diode with triple isolatio | Central Semiconductor | 9,458 | BOMに追加 |
| UPG2408TB-E4-A | Reliable Performance Guaranteed with Our Compliant RF Switch Soluti | Cel | 7,570 | BOMに追加 |
| NTJD4152PT2G | Dual p-channel MOSFET array for efficient power management | Onsemi | 6,826 | BOMに追加 |
| PSA-5455+ | Enhance your wireless communication system with this powerful RF amplifier | Mini-Circuits | 5,883 | BOMに追加 |
| DMN33D8LDW-7 | Space-efficient T&R (Through Hole) compatible design | Diodes Incorporated | 9,458 | BOMに追加 |
| DMN2004DWKQ-7 | Low-voltage operation suitable for various electronics designs | Diodes Incorporated | 9,458 | BOMに追加 |
| DMMT3904WQ-7-F | Compact 6-pin SOT-363 package ideal for space-constrained designs | Diodes Incorporated | 9,458 | BOMに追加 |
| MGA-85563-TR1G | RF Amplifier IC Cellular, PCS, WLAN 800MHz ~ 6GHz SOT-363, SC70 | Broadcom Limited | 6,843 | BOMに追加 |
| BGU7044,115 | BGA7044 Series 40 - 1000 MHz 14 dB Wideband Low Noise Amplifier - SOT-363 | NXP | 9,458 | BOMに追加 |
| DSS8110Y-7 | 100V Voltage Rating, 1A Current Rating | Diodes Incorporated | 9,455 | BOMに追加 |
| BAS70DW-06-7-F | Part number BAS70DW-06-7-F | Diodes Incorporated | 3,427 | BOMに追加 |
| SSM6L35FU(TE85L,F) | MOSFET with N-type channel, suitable for small signal amplification or switching tasks, supports currents ranging from -0 | Toshiba | 8,563 | BOMに追加 |
| BAS16HTWQ-13 | Diode Array 3 Independent 100 V 200mA (DC) Surface Mount 6-TSSOP, SC-88, SOT-363 | Diodes Incorporated | 4,217 | BOMに追加 |
| PS4157NCEX | 1 Circuit IC Switch 2:1 4.5Ohm SOT-363-6 (SC-70) | Diodes Incorporated | 7,477 | BOMに追加 |
| ZXCT212BDW-7 | SOT363 packaging | Diodes Incorporated | 4,912 | BOMに追加 |
| ZXCT210BDW-7 | Current & Power Monitors & Regulators CM Voltage Output SOT363 T&R 3K | Diodes Incorporated | 4,979 | BOMに追加 |
| ZXCT199B1DW-7 | Current Monitor Regulator High/Low-Side SOT-363 | Diodes Incorporated | 7,867 | BOMに追加 |
| MGA-87563-BLKG | RF Amplifier IC ISM, PCS, GPS 500MHz ~ 4GHz SOT-363, SC70 | Broadcom Limited | 6,188 | BOMに追加 |
| SI1900DL-T1-GE3 | Trans MOSFET N-CH 30V 0.59A 6-Pin SC-70 T/R | Vishay | 9,458 | BOMに追加 |
| SI1965DH-T1-E3 | Mosfet Array 12V 1.3A 1.25W Surface Mount SC-70-6 | Vishay | 9,458 | BOMに追加 |
| CMKSH-3T TR PBFREE | Diode Array 3 Independent 30 V 100mA (DC) Surface Mount 6-TSSOP, SC-88, SOT-363 | Central Semiconductor | 9,458 | BOMに追加 |
| CMKT5087 TR PBFREE | Bipolar (BJT) Transistor Array 2 PNP (Dual) 50V 50mA 40MHz 350mW Surface Mount SOT-363 | Central Semiconductor | 9,458 | BOMに追加 |
| BGM1012,115 | RF Amplifier TAPE-7 MMIC-RFSS | NXP | 9,458 | BOMに追加 |
| BGM1011,115 | RF Amplifier TAPE-7 MMIC-RFSS | NXP | 9,458 | BOMに追加 |
| BSD223PH6327 | MOSFET P-Ch | Infineon Technologies Corporation | 2,049 | BOMに追加 |
| BSD840NH6327 | Mosfet Array 20V 880mA 500mW Surface Mount PG-SOT363-PO | Infineon Technologies Corporation | 2,381 | BOMに追加 |
| BSS8402DW-13-F | Trans MOSFET N/P-CH 60V/50V 0.115A/0.13A 6-Pin SOT-363 T/R | Diodes Incorporated | 9,458 | BOMに追加 |
| HN1B01FU-GR,LF | Bipolar (BJT) Transistor Array NPN, PNP 50V 150mA 150MHz 200mW, 210mW Surface Mount US6 | Toshiba | 9,458 | BOMに追加 |
| SGA2163Z | RF Amplifier DC-5GHz SSG 9.8dB NF 4.4dB SiGe | Qorvo | 9,458 | BOMに追加 |
| DMN33D8LV-7 | Dual N-Channel Enhancement Mode MOSFET | Diodes Incorporated | 9,458 | BOMに追加 |
| SQ1902AEL-T1_GE3 | Mosfet Array 20V 780mA (Tc) 430mW Surface Mount PowerPAK® SC-70-6 Dual | Vishay | 9,458 | BOMに追加 |
| 2N7002KDW-TP | Trans MOSFET N-CH 60V 0.34A 6-Pin SOT-363 T/R | Micro Commercial Components (MCC) | 9,458 | BOMに追加 |
| 2N7002KDW-AU_R1_000A1 | Mosfet Array 60V 250mA (Ta) 350mW (Ta) Surface Mount SOT-363 | Panjit | 9,458 | BOMに追加 |
| DMP1055USW-7 | P-Channel Enhancement Mode MOSFET | Diodes Incorporated | 9,458 | BOMに追加 |
| SI1411DH-T1-BE3 | P-Channel 150 V 420mA (Ta) 1W (Ta) Surface Mount SC-70-6 | Vishay | 9,458 | BOMに追加 |
| DMN65D8LDWQ-7 | Dual N-Channel Enhancement Mode MOSFET | Diodes Incorporated | 9,458 | BOMに追加 |
| SQ1563AEH-T1_GE3 | Trans MOSFET N/P-CH 20V 0.8A Automotive AEC-Q101 6-Pin SC-70 T/R | Vishay | 9,458 | BOMに追加 |
| SQ1539EH-T1_GE3 | Trans MOSFET N/P-CH 30V 0.85A Automotive 6-Pin SC-70 T/R | Vishay | 9,458 | BOMに追加 |
| SQ1431EH-T1_GE3 | MOSFET 30V 3A 3W AEC-Q101 Qualified | Vishay | 9,458 | BOMに追加 |
| SI1865DL-T1-GE3 | Power Switch/Driver 1:1 P-Channel 1.2A SC-70-6 | Vishay | 9,458 | BOMに追加 |
| SI1501DL-T1 | MOSFET 20 0.25/0.18 | Vishay | 9,458 | BOMに追加 |
| SI1489EDH-T1-GE3 | P-Channel 8 V 2A (Tc) 2.8W (Tc) Surface Mount SC-70-6 | Vishay | 9,458 | BOMに追加 |
| SI1406DH-T1-E3 | N-Channel 20 V 3.1A (Ta) 1W (Ta) Surface Mount SC-70-6 | Vishay | 9,458 | BOMに追加 |
| SI1403BDL-T1-E3 | P-Channel 20 V 1.4A (Ta) 568mW (Ta) Surface Mount SC-70-6 | Vishay | 9,458 | BOMに追加 |
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