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Infineon SPW35N60C3

Name: SPW35N60C3
Brand: Infineon Technologies Corporation
Rating: 4.8 (10 reviews)

N-Channel 650 V 34.6A (Tc) 313W (Tc) Through Hole PG-TO247-3-1

ブランド: Infineon Technologies Corporation

製造元部品 #: SPW35N60C3

データシート: SPW35N60C3 Datasheet (PDF)

パッケージ/ケース: TO-247

RoHS ステータス:

在庫状況: 3,297 個、新しいオリジナル

製品の種類: Single FETs, MOSFETs

Warranty: 1 Year Ovaga Warranty - Find Out More

価格設定

*すべての価格は米ドルです

数量	単価	外部価格
1	$8.279	$8.279
10	$7.315	$73.150
30	$6.727	$201.810
100	$5.416	$541.600

在庫あり: 3,297 PCS

- +

簡単な見積もり

RFQを提出してください SPW35N60C3 またはメールでご連絡ください: Eメール: [email protected], 12時間以内にご連絡させていただきます。

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述べる

SPW35N60C3 概要

The SPW35N60C3 is a 600V CoolMOS™ Power MOSFET developed by Infineon Technologies. It is part of the Superjunction MOSFET family and is designed for high power applications in consumer electronics, industrial equipment, and automotive systems.Key specifications of the SPW35N60C3 include a drain-source voltage rating of 600V, a continuous drain current of 35A, and a low on-resistance of 0.065 ohms. This MOSFET also features a fast switching speed and a high avalanche energy capability, making it ideal for applications that require high efficiency and reliability.The SPW35N60C3 is housed in a TO-247 package, which provides a good thermal performance and high power density. It also has a wide operating temperature range of -55°C to 150°C, allowing it to be used in various environments.

特徴

Maximum Drain-Source Voltage (VDS): 600V
Continuous Drain Current (ID): 35A
Low On-Resistance (RDS(on)): 0.035 ohms
Fast Switching Characteristics
Avalanche Energy Rated

応用

STW35N60M2 by STMicroelectronics
IRFP4768PBF by Infineon Technologies
IXFH35N60Q by IXYS Corporation
RJK0355DPA by Renesas Electronics

仕様

パラメータ	価値	パラメータ	価値
Manufacturer:	Infineon	Product Category:	MOSFET
RoHS:	Details	Technology:	Si
Mounting Style:	Through Hole	Package / Case:	TO-247-3
Transistor Polarity:	N-Channel	Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V	Id - Continuous Drain Current:	34.6 A
Rds On - Drain-Source Resistance:	100 mOhms	Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	2.1 V	Qg - Gate Charge:	150 nC
Minimum Operating Temperature:	- 55 C	Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	313 W	Channel Mode:	Enhancement
Tradename:	CoolMOS	Series:	CoolMOS C3
Packaging:	Tube	Brand:	Infineon Technologies
Configuration:	Single	Fall Time:	10 ns
Forward Transconductance - Min:	36 S	Height:	21.1 mm
Length:	16.13 mm	Product Type:	MOSFET
Rise Time:	5 ns	Factory Pack Quantity:	240
Subcategory:	MOSFETs	Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	70 ns	Typical Turn-On Delay Time:	10 ns
Width:	5.21 mm	Part # Aliases:	SPW35N6C3XK SP000014970 SPW35N60C3FKSA1
Unit Weight:	0.211644 oz

配送

	配送料	リードタイム
DHL	$20.00-$40.00 (0.50 KG)	2-5 日々
フェデックス	$20.00-$40.00 (0.50 KG)	2-5 日々
UPS	$20.00-$40.00 (0.50 KG)	2-5 日々
TNT	$20.00-$40.00 (0.50 KG)	2-5 日々
EMS	$20.00-$40.00 (0.50 KG)	2-5 日々
登録された航空便	$20.00-$40.00 (0.50 KG)	2-5 日々

処理時間：送料は地域や国によって異なります。

支払い

支払条件		ハンドフィー
	電信送金	銀行手数料 US$30.00 を請求します。
	ペイパル	4.0％のサービス料がかかります。
	クレジットカード	3.5％のサービス料がかかります。
	ウエスタンユニオン	charge US.00 banking fee.
	送金サービス	銀行手数料は 0.00 米ドルかかります。

保証

1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。

2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。ただし、商品は元の状態のままでなければなりません。

パッキング

ステップ1 :製品
ステップ2 :真空包装
ステップ3 :静電気防止袋
ステップ4 :個包装
ステップ5 :梱包箱
ステップ6 :バーコード配送タグ

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私たちは出荷前にすべての商品を検査し、すべての製品が良好な状態であることを確認し、部品が新しいオリジナルでデータシートと一致していることを確認します。

すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。

パーツポイント

SPW35N60C3 is a power MOSFET transistor chip commonly used in electronic devices for efficient switching and power management. It has a maximum voltage rating of 600V and a continuous current rating of 35A. This chip is designed to handle high power applications with low on-state resistance and fast switching speeds.
Equivalent

The equivalent products of SPW35N60C3 chip are IGBTs such as 2SP0115T2B0A, 2SP0115T2D0A, and 2SP0115T2A0A. Other options may include STGWA60H65DF, CM400HA-24H, and DSEI30-06A. Make sure to check the specifications and compatibility before purchasing as they may have different characteristics and ratings.
Features

Some features of the SPW35N60C3 include a power MOSFET, a high switching performance, low on-resistance, and a reduced gate charge. It also has a gate threshold voltage of 2.5V and a continuous drain current of 35A. The SPW35N60C3 is suitable for a variety of applications requiring high power and efficiency.
Pinout

The SPW35N60C3 is a power MOSFET with a TO-247 package and a pin count of 3. Pin 1 is the gate, pin 2 is the source, and pin 3 is the drain. It is used for high current and high voltage applications such as power supplies and motor control.
Manufacturer

The SPW35N60C3 is manufactured by STMicroelectronics, which is a multinational semiconductor company headquartered in Geneva, Switzerland. STMicroelectronics specializes in developing and producing a wide range of semiconductor technologies and solutions for a variety of industries including automotive, industrial, consumer, and communications.
Application Field

The SPW35N60C3 is a power transistor specifically designed for high-power applications such as industrial power supplies, motor control systems, and automotive applications. It can also be used in renewable energy systems, welding equipment, and various other high-power electronics where efficient power switching is required.
Package

The SPW35N60C3 chip is housed in a TO-247 package, featuring a through-hole mounting type. It has a standard form factor and a size of 10.5mm x 15.6mm x 4.7mm.