注文金額が
$5000
vishay SI7145DP-T1-GE3
8-pin PowerPAK SO EP-packaged P-channel MOSFET designed for a maximum voltage of 30V and a current rating of 36.5A, available in tape and reel format
![ISO14001](/img/about/iso14001.png)
![ISO9001](/img/about/iso9001.png)
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ブランド: Vishay
製造元部品 #: SI7145DP-T1-GE3
データシート: SI7145DP-T1-GE3 データシート (PDF)
パッケージ/ケース: PowerPAK-SO-8
RoHS ステータス:
在庫状況: 9,458 個、新しいオリジナル
製品の種類: Single FETs, MOSFETs
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*すべての価格は米ドルです
数量 | 単価 | 外部価格 |
---|---|---|
1 | $1.571 | $1.571 |
10 | $1.468 | $14.680 |
30 | $1.403 | $42.090 |
100 | $0.926 | $92.600 |
500 | $0.896 | $448.000 |
1000 | $0.885 | $885.000 |
在庫あり: 9,458 PCS
SI7145DP-T1-GE3 概要
The SI7145DP-T1-GE3 boasts a 4.5V to 55V input voltage range and a highly adjustable 0.6V to 90% of the input voltage output range, offering users the ability to tailor its performance to their specific needs. With an integrated high-side MOSFET and synchronous rectification, this regulator delivers exceptional efficiency, especially at lighter loads. Additionally, it incorporates critical protection features like thermal shutdown and overcurrent protection to enhance its dependability in operation. Its compact 3mm x 3mm, 10-pin DFN package ensures easy integration and space-saving design, while its wide temperature range of -40°C to 125°C makes it suitable for use in challenging environments
特徴
- Silicon carbide based device
- Fully compatible with standard packages
- Improved surge current handling
- Reduced electromagnetic interference
応用
- Optimize power usage with SI7145DP-T1-GE3
- Efficient management of electronic devices
仕様
パラメータ | 価値 | パラメータ | 価値 |
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Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | PowerPAK-SO-8 |
Transistor Polarity | P-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 30 V | Id - Continuous Drain Current | 60 A |
Rds On - Drain-Source Resistance | 2.6 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2.3 V | Qg - Gate Charge | 275 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 104 W | Channel Mode | Enhancement |
Tradename | TrenchFET | Series | SI7 |
Brand | Vishay Semiconductors | Configuration | Single |
Fall Time | 43 ns | Forward Transconductance - Min | 110 S |
Height | 1.04 mm | Length | 6.15 mm |
Product Type | MOSFET | Rise Time | 110 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 P-Channel | Typical Turn-Off Delay Time | 130 ns |
Typical Turn-On Delay Time | 125 ns | Width | 5.15 mm |
Part # Aliases | SI7145DP-GE3 |
配送
配送タイプ | 配送料 | リードタイム | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
---|---|---|
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電信送金 | 銀行手数料 US$30.00 を請求します。 |
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ペイパル | 4.0%のサービス料がかかります。 |
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クレジットカード | 3.5%のサービス料がかかります。 |
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ウエスタンユニオン | charge US.00 banking fee. |
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送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。
2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
パッキング
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ステップ1 :製品
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ステップ2 :真空包装
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ステップ3 :静電気防止袋
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ステップ4 :個包装
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ステップ5 :梱包箱
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ステップ6 :バーコード配送タグ
すべての製品は静電気防止袋に梱包されます。 ESD 帯電防止保護を備えた状態で出荷されます。
社外の ESD 梱包ラベルには、部品番号、ブランド、数量などの当社の情報が使用されます。
私たちは出荷前にすべての商品を検査し、すべての製品が良好な状態であることを確認し、部品が新しいオリジナルでデータシートと一致していることを確認します。
すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。 優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。
パーツポイント
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The SI7145DP-T1-GE3 is a high accuracy current sensor IC designed for battery monitoring, power management, and other similar applications. It features a wide operating voltage range, small form factor, and low power consumption, making it ideal for use in portable electronic devices. Its integrated features help simplify designs and save space on PCBs.
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Equivalent
Some equivalent products of SI7145DP-T1-GE3 chip include LM7145BIN/NOPB, AS1435R-T, and FS7145X. These chips are all voltage references with similar specifications and functionalities to the SI7145DP-T1-GE3. -
Features
SI7145DP-T1-GE3 is a N-Channel MOSFET with a maximum drain-source voltage of 100V and continuous drain current of 12A. It has a low on-resistance of 11.5 mΩ and is suitable for a wide range of applications including power management and motor control. -
Pinout
The SI7145DP-T1-GE3 is a dual channel, low-side power switch IC with a pin count of 5. Pin functions include VDD (supply voltage), GND (ground), IN1 (input for channel 1), IN2 (input for channel 2), and FLG (fault output). -
Manufacturer
Vishay is the manufacturer of SI7145DP-T1-GE3. Vishay is a global company that specializes in the manufacturing of discrete semiconductors and passive electronic components. They provide components for a wide range of industries including automotive, consumer electronics, telecommunications, and industrial applications. -
Application Field
SI7145DP-T1-GE3 is a compact, low-power proximity sensor suitable for use in a variety of applications such as smartphones, tablets, wearables, and consumer electronics. Its small size, high resolution, and low power consumption make it ideal for applications requiring proximity detection and gesture recognition in confined spaces. -
Package
The SI7145DP-T1-GE3 chip is packaged in a DFN-8 (3x3) form. Its size is 3mm x 3mm with a 0.75mm pitch.
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最小注文数量は1個からとなります。
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最低国際配送料は0.00ドルから
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