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$5000NVMFS5C646NLAFT1G
N-Channel 60 V 20A (Ta), 93A (Tc) 3.7W (Ta), 79W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
ブランド: onsemi
製造元部品 #: NVMFS5C646NLAFT1G
データシート: NVMFS5C646NLAFT1G データシート (PDF)
パッケージ/ケース: SO-8FL-4
製品の種類: Single FETs, MOSFETs
NVMFS5C646NLAFT1G 概要
The NVMFS5C646NLAFT1G PowerTrench® MOSFET by ON Semiconductor is a high-performance N-channel enhancement mode power FET that caters to the demands of modern power management applications. With a robust drain-source voltage of 30V and a continuous drain current rating of 67A, this MOSFET offers exceptional reliability and efficiency in a compact package. Its low on-resistance of 4.6mΩ at a Vgs of 10V ensures minimal conduction losses, making it an ideal choice for various electronic devices requiring efficient power management
特徴
- NVMFS5C646NLAFT1G is a high-power N-channel MOSFET for automotive and industrial applications
- The device features low on-resistance of 5.6mΩ and fast switching performance for efficient energy transfer
- Designed for use in harsh environments, it offers improved reliability and reduced thermal resistance
- This MOSFET has a voltage rating of 40V and a continuous drain current rating of 120A for high-power applications
- The compact and thermally efficient package design helps to reduce power loss and increase efficiency
- This N-channel MOSFET is suitable for use in power electronic circuits, motor control, and energy storage systems
応用
- Automotive power systems
- Solenoid driver circuits
- Electronic load switches
仕様
| パラメータ | 価値 | パラメータ | 価値 |
|---|---|---|---|
| Manufacturer: | onsemi | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | SO-8FL-4 |
| Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V | Id - Continuous Drain Current: | 93 A |
| Rds On - Drain-Source Resistance: | 3.8 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V | Qg - Gate Charge: | 33.7 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 79 W | Channel Mode: | Enhancement |
| Qualification: | AEC-Q101 | Packaging: | MouseReel |
| Brand: | onsemi | Configuration: | Single |
| Fall Time: | 5.1 ns | Forward Transconductance - Min: | 105 S |
| Product Type: | MOSFET | Rise Time: | 14.9 ns |
| Factory Pack Quantity: | 1500 | Subcategory: | MOSFETs |
| Transistor Type: | 1 N-Channel | Typical Turn-Off Delay Time: | 23.6 ns |
| Typical Turn-On Delay Time: | 10.4 ns | Unit Weight: | 0.026455 oz |
| Product Status | Active | FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 60 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta), 93A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 4.7mOhm @ 50A, 10V | Vgs(th) (Max) @ Id | 2V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 33.7 nC @ 10 V | Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 2164 pF @ 25 V | Power Dissipation (Max) | 3.7W (Ta), 79W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) | Grade | Automotive |
| Qualification | AEC-Q101 | Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (5x6) (8-SOFL) | Package / Case | 8-PowerTDFN, 5 Leads |
| Base Product Number | NVMFS5 |
配送
| 配送タイプ | 配送料 | リードタイム | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間：送料は地域や国によって異なります。
支払い
| 支払条件 | ハンドフィー | |
|---|---|---|
 |
電信送金 | 銀行手数料 US$30.00 を請求します。 |
 |
ペイパル | 4.0％のサービス料がかかります。 |
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クレジットカード | 3.5％のサービス料がかかります。 |
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ウエスタンユニオン | charge US.00 banking fee. |
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送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
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2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
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パーツポイント
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The NVMFS5C646NLAFT1G chip is a dual N-channel MOSFET designed for use in low voltage, high speed switching applications. It features a low on-resistance and a compact footprint, making it ideal for applications where space and efficiency are important. The chip can handle high current loads and has a high power dissipation capability.
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Equivalent
The equivalent products of NVMFS5C646NLAFT1G chip are NVMFS5C646NT1G, NVMFS5C646NT2G, NVMFS5C646NTAG, NVMFS5C646NTWG, NVMFS5C646NTWG and NVMFS5C646NZG. -
Features
- NVMFS5C646NLAFT1G is a N-channel MOSFET - Features low on-resistance - Can handle high current and voltage levels - Suitable for high power applications - Provides fast switching capabilities - Comes in a compact and surface-mount package -
Pinout
The NVMFS5C646NLAFT1G is a Power MOSFET with a pin count of 8. The pins have functions such as gate, drain, and source for controlling the flow of current in a circuit. Additionally, it has an integrated Schottky diode for more efficient performance. -
Manufacturer
ON Semiconductor is the manufacturer of the NVMFS5C646NLAFT1G. It is a company that specializes in the development and manufacturing of semiconductor components for a wide range of applications including automotive, industrial, and consumer electronics. ON Semiconductor is a global leader in energy-efficient innovations that enable design engineers to reduce energy consumption and increase performance in their designs. -
Application Field
The NVMFS5C646NLAFT1G can be used in various applications such as power management, battery chargers, motor control, lighting, and other high-current switching applications. Its low on-resistance and high current-carrying capability make it suitable for use in high-power circuits where efficiency and reliability are crucial. -
Package
The NVMFS5C646NLAFT1G chip comes in a DFN-8 package type. It is a MOSFET form factor with a size of 3.3mm x 3.3mm.
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