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$5000NVMFD5C650NLWFT1G
Mosfet Array 60V 21A (Ta), 111A (Tc) 3.5W (Ta), 125W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
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![ISO9001](/img/about/iso9001.png)
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ブランド: onsemi
製造元部品 #: NVMFD5C650NLWFT1G
データシート: NVMFD5C650NLWFT1G データシート (PDF)
パッケージ/ケース: DFN EP
製品の種類: FET, MOSFET Arrays
NVMFD5C650NLWFT1G 概要
The NVMFD5C650NLWFT1G is a high-performance dual N-channel MOSFET tailored for automotive applications. Capable of supporting a continuous drain current of 111A and a drain source voltage of 60V, this transistor is designed for robust power delivery in automotive electronic systems. Its ultra-low on resistance of 0.0035ohm, tested at a voltage of 10V, ensures minimal power loss and maximum efficiency. With a threshold voltage of 2.2V and a power dissipation of 125W, this MOSFET is well-suited for high-power automotive applications. Housed in a compact DFN-8 case style with 8 pins, the NVMFD5C650NLWFT1G offers a space-efficient solution for PCB designs. It meets AEC-Q101 automotive qualification standards, guaranteeing reliable and durable performance in harsh automotive environments. With a maximum operating temperature of 175°C and compliance with SVHC regulations for lead, the NVMFD5C650NLWFT1G is engineered to excel in the demanding conditions of automotive electronics
特徴
- Compact Design and Low Power
- Fast Response Time and High Current Handling
- Low Distortion and Noise Immunity
- AEC-Q100 Qualified and PPAP Compliant
- High-Speed Data Transfer and Low Latency
- Robust ESD Protection and Wide Operating Range
応用
- Customizable options
- Superior functionality
- Seamless operation
仕様
パラメータ | 価値 | パラメータ | 価値 |
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Manufacturer: | onsemi | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | SMD/SMT | Package / Case: | SO-8FL-Dual-8 |
Transistor Polarity: | N-Channel | Number of Channels: | 2 Channel |
Vds - Drain-Source Breakdown Voltage: | 60 V | Id - Continuous Drain Current: | 111 A |
Rds On - Drain-Source Resistance: | 3.5 mOhms, 3.5 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 2 V | Qg - Gate Charge: | 37 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
Pd - Power Dissipation: | 125 W | Channel Mode: | Enhancement |
Qualification: | AEC-Q101 | Series: | NVMFD5C650NL |
Packaging: | MouseReel | Brand: | onsemi |
Configuration: | Dual | Fall Time: | 13 ns, 13 ns |
Forward Transconductance - Min: | 120 S, 120 S | Product Type: | MOSFET |
Rise Time: | 24 ns, 24 ns | Factory Pack Quantity: | 1500 |
Subcategory: | MOSFETs | Transistor Type: | 2 N-Channel |
Typical Turn-Off Delay Time: | 37 ns, 37 ns | Typical Turn-On Delay Time: | 13 ns, 13 ns |
Unit Weight: | 0.005686 oz |
配送
配送タイプ | 配送料 | リードタイム | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
---|---|---|
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電信送金 | 銀行手数料 US$30.00 を請求します。 |
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ペイパル | 4.0%のサービス料がかかります。 |
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クレジットカード | 3.5%のサービス料がかかります。 |
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ウエスタンユニオン | charge US.00 banking fee. |
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送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
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2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
パッキング
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ステップ2 :真空包装
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ステップ3 :静電気防止袋
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ステップ4 :個包装
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ステップ6 :バーコード配送タグ
すべての製品は静電気防止袋に梱包されます。 ESD 帯電防止保護を備えた状態で出荷されます。
社外の ESD 梱包ラベルには、部品番号、ブランド、数量などの当社の情報が使用されます。
私たちは出荷前にすべての商品を検査し、すべての製品が良好な状態であることを確認し、部品が新しいオリジナルでデータシートと一致していることを確認します。
すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。 優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。
パーツポイント
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The NVMFD5C650NLWFT1G is a power MOSFET chip designed for use in low voltage, high speed switching applications. It features a low on-resistance and high load capacity, making it ideal for power management in various electronic devices. The chip is designed to optimize performance and efficiency in a compact and reliable package.
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Equivalent
Some equivalent products of the NVMFD5C650NLWFT1G chip include the IPP60R190C6, IRFR5305TRLPBF, FDP038AN08A0, and NTMFS5C629NL. These chips are all power MOSFETs with similar specifications and performance characteristics. -
Features
The NVMFD5C650NLWFT1G is a N-Channel Power MOSFET with a high current rating of 85A, low on-resistance of 6.5mΩ, and a voltage rating of 40V. It is designed for automotive applications and offers excellent switching performance and thermal characteristics. Additionally, it is AEC-Q101 qualified, making it suitable for various automotive powertrain and braking applications. -
Pinout
The NVMFD5C650NLWFT1G is a power MOSFET with a pin count of 8. It is designed for use in high-speed switching applications, such as DC-DC converters and synchronous rectification. Its functions include low gate charge, low on-resistance, and fast switching speed, making it suitable for high-efficiency power management systems. -
Manufacturer
ON Semiconductor Corporation is the manufacturer of the NVMFD5C650NLWFT1G. It is a multinational semiconductor supplier company that designs and manufactures power management, analog, and discrete components for various industries including automotive, communications, computing, consumer, industrial, and aerospace. -
Application Field
The NVMFD5C650NLWFT1G is a N-channel MOSFET transistor with a voltage rating of 650V and a current rating of 5A. It is commonly used in power supply, motor control, and high frequency switching applications. It is suitable for use in electric vehicle systems, solar inverters, and industrial motor control systems. -
Package
The NVMFD5C650NLWFT1G is a surface mount package type, in a dual asymmetrical form. Its size is 5mm x 6mm, with a thickness of 0.9mm.
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