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$5000NVMFD5C650NLT1G
Mosfet Array 60V 21A (Ta), 111A (Tc) 3.5W (Ta), 125W (Tc) Surface Mount 8-DFN (5x6) Dual Flag (SO8FL-Dual)
ブランド: onsemi
製造元部品 #: NVMFD5C650NLT1G
データシート: NVMFD5C650NLT1G データシート (PDF)
パッケージ/ケース: DFN EP
製品の種類: FET, MOSFET Arrays
NVMFD5C650NLT1G 概要
Leveraging dual N-Channel technology, the NVMFD5C650NLT1G Mosfet offers superior performance characteristics suitable for automotive applications. With a continuous drain current capacity of 111A and a drain-source voltage of 60V, this transistor can accommodate high-power demands in automotive systems. The low on-resistance of 0.0035Ohm, tested at 10V, ensures efficient power conversion and minimal energy loss. Featuring a threshold voltage of 2.2V, this Mosfet delivers precise and reliable switching performance. Compliant with Rohs standards, this product from Onsemi guarantees both quality and environmental sustainability in automotive electronics
特徴
- High-Speed Analog-to-Digital Conversion
- Low-Jitter Timing for Precise Clock Signals
- Compact Size with Reduced EMI and RFI
- Low Power Consumption for Extended Battery Life
- Sophisticated Error Detection and Correction
- High-Speed Data Transmission up to 100 Mbps
応用
- LED driver
- Motor controller
- Power supply
仕様
| パラメータ | 価値 | パラメータ | 価値 |
|---|---|---|---|
| Manufacturer: | onsemi | Product Category: | MOSFET |
| RoHS: | Details | Technology: | Si |
| Mounting Style: | SMD/SMT | Package / Case: | SO-8FL-Dual-8 |
| Transistor Polarity: | N-Channel | Number of Channels: | 2 Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V | Id - Continuous Drain Current: | 111 A |
| Rds On - Drain-Source Resistance: | 3.5 mOhms, 3.5 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2 V | Qg - Gate Charge: | 37 nC |
| Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 175 C |
| Pd - Power Dissipation: | 125 W | Channel Mode: | Enhancement |
| Qualification: | AEC-Q101 | Series: | NVMFD5C650NL |
| Packaging: | MouseReel | Brand: | onsemi |
| Configuration: | Dual | Fall Time: | 13 ns, 13 ns |
| Forward Transconductance - Min: | 120 S, 120 S | Product Type: | MOSFET |
| Rise Time: | 24 ns, 24 ns | Factory Pack Quantity: | 1500 |
| Subcategory: | MOSFETs | Transistor Type: | 2 N-Channel |
| Typical Turn-Off Delay Time: | 37 ns, 37 ns | Typical Turn-On Delay Time: | 13 ns, 13 ns |
| Unit Weight: | 0.005686 oz |
配送
| 配送タイプ | 配送料 | リードタイム | |
|---|---|---|---|
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間：送料は地域や国によって異なります。
支払い
| 支払条件 | ハンドフィー | |
|---|---|---|
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電信送金 | 銀行手数料 US$30.00 を請求します。 |
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ペイパル | 4.0％のサービス料がかかります。 |
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クレジットカード | 3.5％のサービス料がかかります。 |
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ウエスタンユニオン | charge US.00 banking fee. |
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送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
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パーツポイント
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The NVMFD5C650NLT1G chip is a 650V N-channel MOSFET designed for use in power management applications. It is equipped with low on-resistance and a high switching speed, making it suitable for switching power supplies, motor control, and other high-efficiency power conversion systems. The chip is designed to operate under high voltage and high temperature conditions, making it suitable for demanding industrial and automotive applications.
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Equivalent
Some equivalent products of the NVMFD5C650NLT1G chip include the IRFD5C60, IRFD5C65, and IRFD5C70 MOSFETs. These are all N-channel power MOSFETs designed for use in various applications such as switching regulators, power supplies, and motor controls. -
Features
1. NVMFD5C650NLT1G is a 650 V N-channel MOSFET. 2. It has a low on-resistance of 0.37 Ohms. 3. Features high current handling capability of 23 A. 4. This MOSFET is designed for use in automotive applications. 5. It has a compact surface-mount DPAK package for easy installation. -
Pinout
The NVMFD5C650NLT1G has 8 pins and is a N-Channel Power MOSFET. It is designed for use in high-power applications, such as power supplies, motor control, and battery management systems. The device is capable of handling high current and has low on-state resistance for efficient power handling. -
Manufacturer
ON Semiconductor is the manufacturer of the NVMFD5C650NLT1G. It is an American multinational corporation that supplies semiconductor and device solutions for various industries such as automotive, communications, consumer, industrial, and aerospace and defense. -
Application Field
The NVMFD5C650NLT1G is commonly used in applications requiring high-speed data transmission such as networking equipment, servers, and storage systems. It is ideal for use in high-frequency applications due to its low capacitance and low on-resistance characteristics. It is also suitable for use in power management and battery charging systems. -
Package
The NVMFD5C650NLT1G chip is offered in a surface mount package type known as DFN-5 (Dual Flat No Lead). It has a form factor of 3x3 mm and is available in a size of 5 mm².
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