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$5000MUN5233DW1T1G
Bipolar Transistors - Pre-Biased 100mA 50V BRT Dual NPN
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MUN5233DW1T1G 概要
Elevate your circuit design with the MUN5233DW1T1G, a cutting-edge digital transistor series that redefines simplicity and functionality. Engineered with an integrated bias network, this BRT replaces the traditional external resistor bias network, providing a more efficient and space-saving solution for your applications. By consolidating the transistor and bias resistors into a single device, the MUN5233DW1T1G offers a hassle-free design experience while delivering exceptional performance and reliability. Upgrade your projects with this innovative transistor series and discover the benefits of enhanced cost-effectiveness and streamlined circuit layout
特徴
- Faster Time-to-Market
- Increased Efficiency
- Reduced Development Costs
- Improved Customer Experience
仕様
パラメータ | 価値 | パラメータ | 価値 |
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Manufacturer: | onsemi | Product Category: | Bipolar Transistors - Pre-Biased |
RoHS: | Details | Configuration: | Dual |
Transistor Polarity: | NPN | Typical Input Resistor: | 4.7 kOhms |
Typical Resistor Ratio: | 0.1 | Mounting Style: | SMD/SMT |
Package / Case: | SOT-363-6 | DC Collector/Base Gain hfe Min: | 80 |
Collector- Emitter Voltage VCEO Max: | 50 V | Continuous Collector Current: | 100 mA |
Peak DC Collector Current: | 100 mA | Pd - Power Dissipation: | 187 mW |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Series: | MUN5233DW1 | Packaging: | MouseReel |
Brand: | onsemi | DC Current Gain hFE Max: | 80 at 5 mA at 10 V |
Height: | 0.9 mm | Length: | 2 mm |
Product Type: | BJTs - Bipolar Transistors - Pre-Biased | Factory Pack Quantity: | 3000 |
Subcategory: | Transistors | Width: | 1.25 mm |
Unit Weight: | 0.000423 oz |
配送
配送タイプ | 配送料 | リードタイム | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
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電信送金 | 銀行手数料 US$30.00 を請求します。 |
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ペイパル | 4.0%のサービス料がかかります。 |
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クレジットカード | 3.5%のサービス料がかかります。 |
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ウエスタンユニオン | charge US.00 banking fee. |
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送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。
2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
パッキング
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ステップ1 :製品
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ステップ2 :真空包装
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ステップ3 :静電気防止袋
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ステップ4 :個包装
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ステップ5 :梱包箱
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ステップ6 :バーコード配送タグ
すべての製品は静電気防止袋に梱包されます。 ESD 帯電防止保護を備えた状態で出荷されます。
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すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。 優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。
パーツポイント
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The MUN5233DW1T1G chip is a high-performance dual N-channel 30V MOSFET designed for use in power management applications. It features low on-resistance, high current handling capacity, and a compact footprint, making it ideal for applications where efficiency and power density are critical.
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Equivalent
Other equivalent products of the MUN5233DW1T1G chip include MMBT5233, MMBT5233L, and MMBT5233LT1G. These are all NPN Bipolar transistors with similar specifications and performance characteristics, making them suitable substitutes for the MUN5233DW1T1G chip. -
Features
MUN5233DW1T1G is a high-speed, high-power, SMT N-Channel MOSFET with a maximum drain-source voltage of 30V and continuous drain current of 12A. It features low on-resistance, high thermal efficiency, and a compact DFN package, making it suitable for a wide range of power management applications. -
Pinout
The MUN5233DW1T1G is a dual N-channel enhancement mode MOSFET. It has a pin count of 6 and is commonly used in power management applications. It features low on-resistance, high current carrying capability, and is suitable for battery management, DC-DC converters, and motor control circuits. -
Manufacturer
The manufacturer of MUN5233DW1T1G is ON Semiconductor. ON Semiconductor is a Fortune 500 semiconductors supplier company with headquarters in Phoenix, Arizona. The company produces a wide range of semiconductor products used in various industries, including automotive, consumer electronics, and communication systems. -
Application Field
MUN5233DW1T1G is a high-performance, low power, N-channel MOSFET transistor. It is commonly used in applications such as power management, battery charging, motor control, and LED lighting due to its high switching speeds, low on-resistance, and excellent thermal performance. -
Package
The MUN5233DW1T1G chip is a Surface Mount package type with a Dual NPN array configuration. It comes in a DFN-8 form and measures 2mm x 2mm in size.
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最小注文数量は1個からとなります。
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最低国際配送料は0.00ドルから
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全商品365日品質保証