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$5000IXTX200N10L2
Trans MOSFET N-CH 100V 200A 3-Pin(3+Tab) ISOPLUS 247
ブランド: IXYS
製造元部品 #: IXTX200N10L2
データシート: IXTX200N10L2 データシート (PDF)
パッケージ/ケース: TO-247-3
製品の種類: Single FETs, MOSFETs
IXTX200N10L2 概要
Tailored specifically for applications requiring Power MOSFETs to operate in their current saturation regions, these unique devices feature low thermal resistances, high power density, and extended Forward Bias Safe Operating Areas (FBSOA).When Power MOSFETs are utilized in linear-mode operation, as opposed to their conventional switch-mode one, they are required to endure substantially high thermal and electrical stresses due to the simultaneous occurrence of high drain voltages and currents; these extreme stresses can cause typical devices to fail. Littelfuse LinearL2™ Power MOSFETs have been designed to address these kinds of device failures – the FBSOAs are “extended” when the positive feedback of electro-thermal instability is suppressed, giving rise to larger “operating windows.” The FBSOAs are guaranteed at 75°C.
特徴
- Designed for linear operation
- Guaranteed FBSOA at 75°C
- Low on-resistances R
- DS(on)
- Avalanche rated
- International standard packages
- UL 94 V-0 Flammability qualified
- (molding epoxies)
応用
- E-fuses and hot-swap circuits
- Battery management
- Current regulators
- Linear amplifiers
- Fan controllers
- Programmable loads
- Soft-start control
仕様
パラメータ | 価値 | パラメータ | 価値 |
---|---|---|---|
Manufacturer: | IXYS | Product Category: | MOSFET |
RoHS: | Details | Technology: | Si |
Mounting Style: | Through Hole | Package / Case: | TO-247-3 |
Transistor Polarity: | N-Channel | Number of Channels: | 1 Channel |
Vds - Drain-Source Breakdown Voltage: | 100 V | Id - Continuous Drain Current: | 200 A |
Rds On - Drain-Source Resistance: | 11 mOhms | Vgs - Gate-Source Voltage: | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage: | 4.5 V | Qg - Gate Charge: | 540 nC |
Minimum Operating Temperature: | - 55 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | 1.04 kW | Channel Mode: | Enhancement |
Tradename: | Linear L2 | Series: | IXTX200N10 |
Packaging: | Tube | Brand: | IXYS |
Configuration: | Single | Fall Time: | 27 ns |
Forward Transconductance - Min: | 55 S | Height: | 21.34 mm |
Length: | 16.13 mm | Product Type: | MOSFET |
Rise Time: | 225 ns | Factory Pack Quantity: | 30 |
Subcategory: | MOSFETs | Type: | Linear L2 Power MOSFET |
Typical Turn-Off Delay Time: | 127 ns | Typical Turn-On Delay Time: | 40 ns |
Width: | 5.21 mm | Unit Weight: | 0.211644 oz |
Series | Linear L2™ | Package | Tube |
Product Status | Active | FET Type | N-Channel |
Technology | MOSFET (Metal Oxide) | Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 200A (Tc) | Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 11mOhm @ 100A, 10V | Vgs(th) (Max) @ Id | 4.5V @ 3mA |
Gate Charge (Qg) (Max) @ Vgs | 540 nC @ 10 V | Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 23000 pF @ 25 V | Power Dissipation (Max) | 1040W (Tc) |
Operating Temperature | -55°C ~ 150°C (TJ) | Mounting Type | Through Hole |
Supplier Device Package | PLUS247™-3 | Package / Case | TO-247-3 Variant |
Base Product Number | IXTX200 |
配送
配送タイプ | 配送料 | リードタイム | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
---|---|---|
電信送金 | 銀行手数料 US$30.00 を請求します。 | |
ペイパル | 4.0%のサービス料がかかります。 | |
クレジットカード | 3.5%のサービス料がかかります。 | |
ウエスタンユニオン | charge US.00 banking fee. | |
送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
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パーツポイント
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The IXTX200N10L2 chip is a high-power N-channel MOSFET designed for power supply applications. It has a maximum voltage rating of 100V and a continuous drain current of 200A. The chip features low on-state resistance and high switching speed, making it suitable for high power and high frequency applications.
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Equivalent
The equivalent products of IXTX200N10L2 chip are Infineon IPP200N10N3G and IRFZ44NPBF from International Rectifier. These chips have similar specifications and can be used as replacements for the IXTX200N10L2 in various applications. -
Features
The IXTX200N10L2 is a high power, high performance MOSFET with a maximum voltage rating of 100V, a continuous drain current of 200A, and low on-resistance. It also features a compact and rugged design, making it ideal for use in power electronics applications such as motor drives, converters, and inverters. -
Pinout
The IXTX200N10L2 is a 50-pin power module that functions as a high-efficiency integrated power supply and gate drive solution for industrial applications, such as motors, inverters, and power converters. It features high input voltage, low power dissipation, and built-in protection features for enhanced reliability and performance. -
Manufacturer
The manufacturer of the IXTX200N10L2 is Powerex, a leading manufacturer of power semiconductors such as IGBTs, SiCs, and diodes for a wide range of industrial applications. Powerex is a subsidiary of Mitsubishi Electric Corporation and specializes in providing high-quality, reliable power components for improving energy efficiency and performance in various industries. -
Application Field
The IXTX200N10L2 is commonly used in applications such as motor drives, power supplies, welding equipment, and industrial automation. It is suitable for high power and high voltage applications due to its robust design and high efficiency. -
Package
The IXTX200N10L2 chip comes in a MOSFET (metal-oxide-semiconductor field-effect transistor) package. It is in a TO-268 form factor, also known as a D2PAK (Dual Diode-Pak). The size of the package is approximately 10.29mm x 12.19mm x 4.57mm.
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