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$5000IXTH20N60
Featuring a current rating of 20 Amps, a voltage rating of 600V, and an on-resistance of 0
ブランド: IXYS CORP
製造元部品 #: IXTH20N60
データシート: IXTH20N60 データシート (PDF)
パッケージ/ケース: TO-247-3
製品の種類: Single FETs, MOSFETs
IXTH20N60 概要
With its high voltage rating of 600V and a continuous current capability of 20A, the IXTH20N60 MOSFET is a reliable choice for a variety of power electronics applications. Its low on-resistance of 0.35 ohms ensures minimal power loss and efficient operation. The TO-247 (SOT-249) package style allows for easy mounting and thermal management, while its RoHS compliance demonstrates its commitment to environmental responsibility
特徴
- Silicon-on-insulator (SOI) technology for improved isolation
- Avalanche-rated for reliable operation under overload conditions
- Rapid switching times for increased efficiency and reduced power consumption
- Fully compatible with advanced logic gate circuits for high-speed data processing
応用
- Compact design
- Efficient performance
- Cost-effective solution
仕様
| パラメータ | 価値 | パラメータ | 価値 |
|---|---|---|---|
| Pbfree Code | Yes | Rohs Code | Yes |
| Part Life Cycle Code | Transferred | Ihs Manufacturer | IXYS CORP |
| Part Package Code | TO-247AD | Package Description | TO-247AD, 3 PIN |
| Pin Count | 3 | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | HTS Code | 8541.29.00.95 |
| Case Connection | ISOLATED | Configuration | SINGLE WITH BUILT-IN DIODE |
| DS Breakdown Voltage-Min | 600 V | Drain Current-Max (ID) | 20 A |
| Drain-source On Resistance-Max | 0.35 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 Code | TO-247AD | JESD-30 Code | R-PSFM-T3 |
| JESD-609 Code | e3 | Number of Elements | 1 |
| Number of Terminals | 3 | Operating Mode | ENHANCEMENT MODE |
| Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
| Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
| Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
| Power Dissipation Ambient-Max | 300 W | Power Dissipation-Max (Abs) | 300 W |
| Pulsed Drain Current-Max (IDM) | 80 A | Qualification Status | Not Qualified |
| Surface Mount | NO | Terminal Finish | MATTE TIN |
| Terminal Form | THROUGH-HOLE | Terminal Position | SINGLE |
| Time@Peak Reflow Temperature-Max (s) | 10 | Transistor Application | SWITCHING |
| Transistor Element Material | SILICON |
配送
| 配送タイプ | 配送料 | リードタイム | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間：送料は地域や国によって異なります。
支払い
| 支払条件 | ハンドフィー | |
|---|---|---|
 |
電信送金 | 銀行手数料 US$30.00 を請求します。 |
 |
ペイパル | 4.0％のサービス料がかかります。 |
 |
クレジットカード | 3.5％のサービス料がかかります。 |
 |
ウエスタンユニオン | charge US.00 banking fee. |
 |
送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
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2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
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パーツポイント
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The IXTH20N60 is a high voltage and high speed switching N-channel power MOSFET chip commonly used in power electronics applications. It can handle a maximum voltage of 600V and a continuous current of 20A. Its compact size and efficient operation make it a popular choice for a wide range of industrial and consumer electronics projects.
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Equivalent
Some equivalent products of the IXTH20N60 chip are the IRG4PH50UD and the HGTG20N60A4D. These chips are power semiconductor devices used for various applications such as motor control, power supplies, and inverters. They all offer similar specifications and performance characteristics to the IXTH20N60. -
Features
IXTH20N60 is a Power MOSFET with a maximum voltage rating of 600V, continuous drain current of 20A, and a low on-resistance of 0.2 ohms. It offers high power handling capability, fast switching speeds, and low gate charge. This MOSFET is suitable for high power applications such as power supplies, inverters, and motor control. -
Pinout
The IXTH20N60 is a high voltage power MOSFET with a TO-247 package type. It has 3 pins: Gate, Drain, and Source. The Gate pin is used to control the flow of current between the Drain and Source pins, making it ideal for high voltage applications. -
Manufacturer
The IXTH20N60 is manufactured by IXYS Corporation, a global semiconductor company that specializes in power and advanced technology platforms. They develop and produce a wide range of power semiconductor devices, integrated circuits, and RF power products used in various industries such as automotive, industrial, healthcare, and consumer electronics. -
Application Field
The IXTH20N60 is a high voltage, high speed IGBT (Insulated Gate Bipolar Transistor) that is commonly used in power electronic applications such as motor control, power supplies, inverters, and converters. It is ideal for applications that require fast switching speeds, high efficiency, and high voltage capabilities. -
Package
The IXTH20N60 chip comes in a TO-247 package type. It is in a transistor form and features a size of 25mm x 16mm x 10mm.
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