注文金額が
$5000IPD031N06L3G
High-current 60V N-Channel Power MOSFET
ブランド: Infineon Technologies
製造元部品 #: IPD031N06L3G
データシート: IPD031N06L3G データシート (PDF)
パッケージ/ケース: TO-252-3,DPak(2Leads+Tab),SC-63
製品の種類: Single FETs, MOSFETs
IPD031N06L3G 概要
Elevate your electronic designs with the IPD031N06L3G Power Field-Effect Transistor, a high-quality component that delivers exceptional performance. This N-Channel transistor features a current rating of 100A and a voltage rating of 60V, making it perfect for power management systems. Its low on-resistance of 0.0031ohm ensures efficient power delivery and reliable operation in demanding circuit applications. The TO-252AA package, constructed with Green Plastic material, provides a sturdy and environmentally friendly housing solution for the transistor. With its Silicon Metal-oxide Semiconductor FET design and 3 PIN configuration, the IPD031N06L3G is easy to integrate into circuit designs for seamless functionality
特徴
Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Avalanche rated
Pb-free plating; RoHS compliant
Halogen-free according to IEC61249-2-21 *
仕様
パラメータ | 価値 | パラメータ | 価値 |
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Series | OptiMOS™ | Product Status | Active |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 60 V | Current - Continuous Drain (Id) @ 25°C | 100A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | Rds On (Max) @ Id, Vgs | 3.1mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id | 2.2V @ 93µA | Gate Charge (Qg) (Max) @ Vgs | 79 nC @ 4.5 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 13000 pF @ 30 V |
Power Dissipation (Max) | 167W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | PG-TO252-3 |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
配送
配送タイプ | 配送料 | リードタイム | |
---|---|---|---|
DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 | |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
---|---|---|
電信送金 | 銀行手数料 US$30.00 を請求します。 | |
ペイパル | 4.0%のサービス料がかかります。 | |
クレジットカード | 3.5%のサービス料がかかります。 | |
ウエスタンユニオン | charge US.00 banking fee. | |
送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
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パッキング
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パーツポイント
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The IPD031N06L3G is a MOSFET power transistor chip designed for high power applications. It offers low conduction and switching losses, making it ideal for efficient power conversion in various electronic devices. With a high current rating and low Rds(on) value, this chip is suitable for use in motor control, power supplies, and other power management applications.
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Equivalent
Some equivalent products of IPD031N06L3G chip are IPI065N12N3G and IPI065N12N3 G. These products have similar specifications and can serve as alternative options for the IPD031N06L3G chip in various applications. -
Features
- IPD031N06L3G is a N-channel power MOSFET with low RDS(on) of 3.1mΩ - It can handle high current of up to 100A - Features a low gate charge of 30nC for fast switching - Suitable for high current applications such as motor control, power supplies, and inverters -
Pinout
The IPD031N06L3G is a MOSFET transistor with a pin count of 3. The functions of each pin are as follows: Pin 1 is the Gate, Pin 2 is the Drain, and Pin 3 is the Source. It is commonly used for switching and amplification in electronic circuits. -
Manufacturer
The manufacturer of the IPD031N06L3G is Infineon Technologies AG. Infineon is a German semiconductor company that produces a wide range of products including power semiconductors, sensors, and microcontrollers for various industries such as automotive, industrial, and consumer electronics. They are known for their innovative and high-quality products in the semiconductor sector. -
Application Field
The IPD031N06L3G is a power MOSFET transistor primarily used in applications such as voltage regulators, motor control, and power management in electronic devices. It is commonly found in power supplies, battery management systems, and automotive electronics due to its high efficiency, fast switching speeds, and low on-resistance. -
Package
The IPD031N06L3G chip is available in a TO-252 package type. It is a MOSFET transistor that comes in a single form and size, measuring 10.1mm x 6.5mm x 2.5mm.
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