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C2M1000170J

Name: C2M1000170J
Rating: 4.5 (10 reviews)

Silicon carbide MOSFET with a 1700V voltage rating and a low on-resistance of 1 Ohm

ブランド: Wolfspeed

製造元部品 #: C2M1000170J

データシート: C2M1000170J データシート (PDF)

パッケージ/ケース: TO-263-7

RoHS ステータス:

在庫状況: 7,439 個、新しいオリジナル

Warranty: 1 Year Ovaga Warranty - Find Out More

簡単な見積もり

RFQを提出してください C2M1000170J またはメールでご連絡ください: メール: [email protected], 12時間以内にご連絡させていただきます。

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述べる

C2M1000170J 概要

C2M1000170J is a power control module manufactured by Cree Inc., a leading semiconductor company based in the United States. It is a third-generation silicon carbide MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) module designed for high-power applications in industries such as automotive, renewable energy, and industrial power systems.The C2M1000170J module features a high blocking voltage of 1700V, a low on-resistance of 100 mΩ, and a high current rating of 100 A. It is optimized for high-speed switching and high-frequency operation, making it suitable for applications that require improved power density, efficiency, and reliability.This power control module is built on Cree’s industry-leading silicon carbide technology, which offers superior performance compared to traditional silicon-based power devices. Silicon carbide devices have higher thermal conductivity, allowing for better heat dissipation and higher temperature operation. They also have lower switching losses, leading to increased efficiency and reduced energy consumption.

特徴

C2M1000170J is a high power N-channel enhancement mode MOSFET
It has a drain-source voltage rating of 600V
The maximum drain current is 96A
It has a low on-resistance of 0.017 ohms
Designed for high power applications requiring high efficiency
RoHS compliant and suitable for lead-free soldering processes

応用

Signal amplification
Satellite communications
Radar systems
Wireless infrastructure
Test and measurement equipment
Industrial applications
Medical devices
Power amplifiers
Electronic warfare systems
Microwave transceivers

仕様

パラメータ	価値	パラメータ	価値
Product Category	MOSFET	RoHS	Details
Technology	SiC	Mounting Style	SMD/SMT
Package / Case	TO-263-7	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	1.7 kV
Id - Continuous Drain Current	5.3 A	Rds On - Drain-Source Resistance	1 Ohms
Vgs - Gate-Source Voltage	- 10 V, + 25 V	Vgs th - Gate-Source Threshold Voltage	3.1 V
Qg - Gate Charge	13 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	78 W
Channel Mode	Enhancement	Brand	Wolfspeed
Configuration	Single	Fall Time	40.4 ns
Height	4.435 mm	Length	10.18 mm
Moisture Sensitive	Yes	Product Type	MOSFET
Rise Time	4.8 ns	Factory Pack Quantity	50
Subcategory	MOSFETs	Typical Turn-Off Delay Time	10.8 ns
Typical Turn-On Delay Time	4 ns	Width	9.075 mm
Unit Weight	0.056438 oz

配送

	配送料	リードタイム
DHL	$20.00-$40.00 (0.50 KG)	2-5 日々
フェデックス	$20.00-$40.00 (0.50 KG)	2-5 日々
UPS	$20.00-$40.00 (0.50 KG)	2-5 日々
TNT	$20.00-$40.00 (0.50 KG)	2-5 日々
EMS	$20.00-$40.00 (0.50 KG)	2-5 日々
登録された航空便	$20.00-$40.00 (0.50 KG)	2-5 日々

処理時間：送料は地域や国によって異なります。

支払い

支払条件		ハンドフィー
	電信送金	銀行手数料 US$30.00 を請求します。
	ペイパル	4.0％のサービス料がかかります。
	クレジットカード	3.5％のサービス料がかかります。
	ウエスタンユニオン	charge US.00 banking fee.
	送金サービス	銀行手数料は 0.00 米ドルかかります。

保証

1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。

2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。ただし、商品は元の状態のままでなければなりません。

パッキング

ステップ1 :製品
ステップ2 :真空包装
ステップ3 :静電気防止袋
ステップ4 :個包装
ステップ5 :梱包箱
ステップ6 :バーコード配送タグ

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社外の ESD 梱包ラベルには、部品番号、ブランド、数量などの当社の情報が使用されます。

私たちは出荷前にすべての商品を検査し、すべての製品が良好な状態であることを確認し、部品が新しいオリジナルでデータシートと一致していることを確認します。

すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。

パーツポイント

The C2M1000170J is a high-performance power MOSFET chip designed for use in advanced power electronic applications. It offers low on-state resistance and fast switching speeds, making it ideal for high-frequency switching power converters and other high-power applications. This chip is manufactured by Cree, a leading provider of silicon carbide technology for power electronics.
Equivalent

The equivalent products of C2M1000170J chip are C2M1000170D, C2M1000170H, C2M0075170D, C2M0075170H, and C2M1000170P.
Features

C2M1000170J is a silicon carbide power MOSFET with a low on-resistance and high switching speed. It is optimized for high-frequency applications, has a high breakdown voltage of 1.7kV, and is designed for use in power supplies, motor drives, and inverters.
Pinout

C2M1000170J is a silicon carbide power MOSFET with a pin count of 4. It is designed for use in high power applications, offering high switching speeds and low on-resistance. This device is commonly used in power electronics and motor control applications.
Manufacturer

C2M1000170J is manufactured by Cree Inc., an American company known for its semiconductor products such as LEDs and power electronics. Cree Inc. is a global leader in silicon carbide technology and provides innovative solutions for a variety of industries including automotive, communications, and industrial applications.
Application Field

The C2M1000170J is a Silicon Carbide Power MOSFET that is commonly used in applications such as electric vehicles, renewable energy systems, industrial motor drives, and power supplies. Its high efficiency, low switching losses, and high temperature capability make it ideal for high power and high voltage applications.
Package

The C2M1000170J chip is a Silicon Carbide Power MOSFET in a 7-pin D2PAK package. It has a form of Surface Mount and a size of 10.67mm x 5.41mm x 3.74mm.