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NXP BLF278
RF Mosfet 50 V 200 mA 18dB 300W CDFM4
ブランド: NXP Semiconductor
製造元部品 #: BLF278
データシート: BLF278 Datasheet (PDF)
パッケージ/ケース: SOT-262
RoHS ステータス:
在庫状況: 350 個、新しいオリジナル
製品の種類: トランジスタ
Warranty: 1 Year Ovaga Warranty - Find Out More
0
1
*すべての価格は米ドルです
| 数量 | 単価 | 外部価格 |
|---|---|---|
| 1 | $2.654 | $2.654 |
| 200 | $1.028 | $205.600 |
| 500 | $0.992 | $496.000 |
| 1000 | $0.973 | $973.000 |
In Stock:350 PCS
BLF278 概要
The BLF278 is a high-power RF (Radio Frequency) transistor, specifically a laterally diffused metal-oxide-semiconductor (LDMOS) transistor, designed for use in high-power RF amplification applications. These transistors are known for their high output power capabilities and are used in various RF power amplifiers.
特徴
High Output Power: BLF278 transistors are capable of delivering high RF output power, making them suitable for high-power RF amplifiers.
LDMOS Technology: They are based on LDMOS technology, which provides good linearity, efficiency, and power handling capabilities in RF applications.
Broadband Operation: BLF278 transistors are designed for broadband operation, which means they can amplify a wide range of frequencies.
High Gain: These transistors typically have high gain, which is crucial for amplifying weak RF signals.
Single-Ended or Push-Pull Configurations: They can be used in both single-ended and push-pull configurations, allowing flexibility in amplifier design.
Robust Construction: BLF278 transistors are built to withstand the demands of high-power RF applications and are often used in rugged environments.
応用
Amateur Radio: They are used in high-power amateur radio amplifiers to boost the output power of radio transmitters.
Broadcasting: In broadcasting systems, BLF278 transistors can be found in transmitters for radio and television stations to amplify broadcast signals.
Wireless Communication: They are used in wireless communication systems, including cellular base stations, to increase the coverage area and signal strength.
Radar Systems: BLF278 transistors are employed in radar systems for their high-power capabilities, helping to transmit and receive radar signals over long distances.
Military and Defense: In military applications, these transistors are used in various RF systems, including radar, jammers, and communication equipment.
Scientific Research: High-power RF amplifiers with BLF278 transistors are used in scientific research, such as in particle accelerators and experimental physics setups.
Medical Equipment: In medical applications like MRI machines and RF ablation systems, these transistors help amplify RF signals for various diagnostic and therapeutic purposes.
仕様
| パラメータ | 価値 | パラメータ | 価値 |
|---|---|---|---|
| Manufacturer: | Advanced Semiconductor, Inc. | Product Category: | RF MOSFET Transistors |
| RoHS: | Details | Transistor Polarity: | Dual N-Channel |
| Technology: | Si | Id - Continuous Drain Current: | 40 A |
| Vds - Drain-Source Breakdown Voltage: | 125 V | Rds On - Drain-Source Resistance: | 5 mOhms |
| Operating Frequency: | 175 MHz | Gain: | 16 dB |
| Output Power: | 300 W | Minimum Operating Temperature: | - 65 C |
| Maximum Operating Temperature: | + 200 C | Mounting Style: | Flange Mount |
| Packaging: | Tray | Brand: | Advanced Semiconductor, Inc. |
| Product Type: | RF MOSFET Transistors | Factory Pack Quantity: | 1 |
| Subcategory: | MOSFETs |
配送
| 配送タイプ | 配送料 | リードタイム | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間：送料は地域や国によって異なります。
支払い
| 支払条件 | ハンドフィー | |
|---|---|---|
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電信送金 | 銀行手数料 US$30.00 を請求します。 |
 |
ペイパル | 4.0％のサービス料がかかります。 |
 |
クレジットカード | 3.5％のサービス料がかかります。 |
 |
ウエスタンユニオン | charge US.00 banking fee. |
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送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。
2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
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パーツポイント
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The BLF278 is a power amplifier transistor chip commonly used in linear amplifier applications. it operates in the uhf frequency range (400-470 mhz) and offers high power output, typically around 300 watts. the chip is designed for efficiency and reliability, making it suitable for various communication systems and rf amplification projects.
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Equivalent
The BLF278 transistor chip is part of the philips semiconductors rf power transistor family. it does not have an exact equivalent product, but other similar rf power transistors that can be used as alternatives include the blf177, blf184, and blf188. these chips have similar specifications and can be used in similar applications. -
Features
The BLF278 is a high-power vhf mos transistor designed for industrial, scientific, and medical (ism) applications. it operates at a frequency range of 175 to 260 mhz and delivers a power output of up to 250 watts. with a rugged design and reliable performance, it is often used in radio and television transmitters. -
Pinout
The BLF278 is a 2-lead pin device that functions as a power amplifier for industrial ldmos applications. -
Manufacturer
The BLF278 is manufactured by nxp semiconductors, a dutch multinational semiconductor manufacturer. nxp is a leading company in the automotive, internet of things (iot), and industrial areas. they provide high-performance mixed-signal and standard product solutions for various industries, including automotive, security, and identification, mobile, and communication infrastructure. -
Application Field
The BLF278 is a high-power rf transistor commonly used in applications such as broadcast transmitters, industrial heating, and medical equipment. -
Package
The BLF278 chip typically comes in a metal sealed package known as to-59. the form of the chip is transistor and it has a size of approximately 8.5mm x 9.5mm.
データシート PDF
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