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SuperSO8
(合計 102 個のパーツ)| 製造元部品番号 | 説明 | メーカー | 在庫あり | 手術 |
|---|---|---|---|---|
| BSC057N08NS3G | N-Channel Silicon Metal-oxide Semiconductor FET | Infineon | 3,109 | BOMに追加 |
| BSC047N08NS3G | 8A current capacity | Infineon | 3,195 | BOMに追加 |
| BSC600N25NS3 G | 250V 25A TDSON-8 Package | Infineon | 6,465 | BOMに追加 |
| BSC0909NS | 8-pin TDSON EP-packaged N-channel MOSFET capable of handling 34V and 12A | Infineon | 2,481 | BOMに追加 |
| BSC0902NS | 8-pin TDSON EP packaged N-channel MOSFET | Infineon | 3,467 | BOMに追加 |
| BSC052N03LS | OptiMOS MOSFET, 30V, 57A, N-channel, TDSON-8 package | Infineon | 2,746 | BOMに追加 |
| BSC600N25NS3G | 250V 25A TDSON-8 Package | Infineon Technologies Corporation | 2,525 | BOMに追加 |
| BSC320N20NS3G | The BSCNSG is designed for demanding power management task | Infineon Technologies Corporation | 3,837 | BOMに追加 |
| BSC123N08NS3G | Low on-resistance of 0.0123 ohms | Infineon Technologies Corporation | 3,313 | BOMに追加 |
| BSC110N15NS5 | High-voltage N-channel transistor for efficient power control | Infineon | 2,810 | BOMに追加 |
| BSC110N06NS3G | TDSON-8 package provides excellent thermal dissipation and reliability | Infineon Technologies Corporation | 2,933 | BOMに追加 |
| BSC093N15NS5 | Super compact SOpackage for space-saving desi | Infineon | 5,510 | BOMに追加 |
| BSC060N10NS3G | Power transistor with N-channel MOSFET, capable of handling 100V voltage and 14.9A current in 8-pin TDSON EP package for automated assembly | Infineon Technologies Corporation | 3,686 | BOMに追加 |
| BSC059N04LSG | MOSFET N-Ch 40V 73A TDSON-8 OptiMOS 3 | Infineon Technologies Corporation | 2,943 | BOMに追加 |
| BSC059N04LS6 | Compact Pin TDSON Package for space-constrained desig | Infineon Technologies Corporation | 3,789 | BOMに追加 |
| BSC030N08NS5 | Advanced MOSFET Technology for Reliable Performan | Infineon | 2,284 | BOMに追加 |
| BSC028N06NS | High-power N-channel MOSFET for efficient motor control and power conversion application | Infineon | 2,122 | BOMに追加 |
| BSC016N06NS | This 8-pin TDSON package provides high current handling | Infineon | 3,836 | BOMに追加 |
| BSC160N15NS5 | High-speed switching N-channel power transisto | Infineon | 9,908 | BOMに追加 |
| BSC190N15NS3G | BSC190N15NS3 G Power Switching Device | Infineon | 3,422 | BOMに追加 |
| BSC030P03NS3G | Transistor MOSFET P-channel 30V with 25.4A in a 8-pin TDSON EP package on tape and reel | Infineon | 3,862 | BOMに追加 |
| BSC014N06NS | N-Channel 60 V 30A (Ta), 100A (Tc) 2.5W (Ta), 156W (Tc) Surface Mount PG-TDSON-8-17 | Infineon | 3,958 | BOMに追加 |
| BSC021N08NS5 | MOSFET TRENCH 40<-<100V | Infineon Technologies Corporation | 3,789 | BOMに追加 |
| BSC027N04LSG | N-Channel 40 V 24A (Ta), 100A (Tc) 2.5W (Ta), 83W (Tc) Surface Mount PG-TDSON-8-1 | Infineon Technologies Corporation | 2,603 | BOMに追加 |
| BSC220N20NSFD | MOSFET TRENCH >=100V | Infineon Technologies Corporation | 3,712 | BOMに追加 |
| BSC034N03LSG | High-power N-channel MOSFET for demanding application | Infineon | 3,743 | BOMに追加 |
| BSC0901NS | BSC0901NS Power FET: Operating as an N-channel Metal-oxide Semiconductor Field-Effect Transistor | Infineon | 2,000 | BOMに追加 |
| BSC082N10LS G | Technical Information: BSC082N10LS G MOSFETs with TDSON-8-EP(5x6) packaging, meeting ROHS standards | Infineon Technologies | 5,116 | BOMに追加 |
| BSC017N04NS G | With a 40V voltage tolerance and a 30A current handling capability | Infineon Technologies | 9,261 | BOMに追加 |
| BSC340N08NS3G | With a voltage tolerance of up to 80V and a current capacity of 7A | Infineon Technologies Corporation | 2,482 | BOMに追加 |
| BSC190N12NS3G | The BSC190N12NS3 G MOSFET features a drain-source resistance of 19 milliohms at a gate-source voltage of 10 volts | Infineon Technologies Corporation | 3,536 | BOMに追加 |
| BSC100N06LS3G | N-channel 60V 12A Transistor with TDSON EP 8-Pin Packaging | Infineon Technologies Corporation | 2,341 | BOMに追加 |
| BSC096N10LS5 | Low-voltage MOSFETs designed for high-reliability applications" | Infineon Technologies Corporation | 3,533 | BOMに追加 |
| BSC093N04LSG | Small signal transistor ideal for amplifying signals | Infineon Technologies Corporation | 2,647 | BOMに追加 |
| BSC0805LS | Field-effect transistor with TRENCH technology for high voltage applications | Infineon Technologies Corporation | 3,231 | BOMに追加 |
| BSC072N03LDG | Product BSC072N03LD G is a Dual N-Channel Power Mosfet with a low on-state resistance of 7.2 mOhm | Infineon Technologies Corporation | 3,792 | BOMに追加 |
| BSC032N04LS | High current, low ohmic resistance N-channel FET | Infineon | 2,977 | BOMに追加 |
| BSC025N03MSG | Advanced power management solutions available | Infineon Technologies Corporation | 3,359 | BOMに追加 |
| BSC022N04LS6 | Low-loss, high-current MOSFET suitable for automotive and industrial application | Infineon Technologies Corporation | 2,668 | BOMに追加 |
| BSC022N03SG | Robust (Ta) and (Tc) rated for reliable operation in extreme temperature | Infineon Technologies Corporation | 2,240 | BOMに追加 |
| BSC22DN20NS3 G | OptiMOS 3 MOSFET featuring N-channel architecture, designed to support up to 200 volts and 7 amps, enclosed in a TDSON-8 package | Infineon | 5,328 | BOMに追加 |
| ISC0703NLS | Power Field-Effect Transistor, | Infineon Technologies Corporation | 2,141 | BOMに追加 |
| ISC060N10NM6 | ISC060N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete power MOSFETs. Compared to alternative products, Infineon’s leading thin wafer technology is enabling significant performance benefits.Infineon’s OptiMOS™ 6 industrial power MOSFET 100 V is designed for high switching frequency application such as telecom and server power supply, but also the ideal choice for other applications such as solar, power tools and drones.In SuperSO8 package it achieves ~20% improvements in on-state resistance (RDS(on)) and 30% better figure of merits (FOM - RDS(on) x Qg and Qgd) compared to the previous technology OptiMOS™ 5. This enables designers to increase efficiency, allowing easier thermal design and less paralleling, leading to system cost reduction. | Infineon Technologies Corporation | 3,419 | BOMに追加 |
| BSC010N04LS6 | MOSFET TRENCH <= 40V | Infineon Technologies Corporation | 2,706 | BOMに追加 |
| BSC014N06NST | MOSFET TRENCH 40<-<100V | Infineon Technologies Corporation | 3,725 | BOMに追加 |
| BSC019N06NS | MOSFET TRENCH 40<-<100V | Infineon Technologies Corporation | 2,193 | BOMに追加 |
| BSC026N04LS | MOSFET TRENCH <= 40V | Infineon Technologies Corporation | 2,282 | BOMに追加 |
| BSC027N10NS5 | MOSFET TRENCH >=100V | Infineon Technologies Corporation | 2,802 | BOMに追加 |
| BSC027N06LS5 | MOSFET TRENCH 40<-<100V | Infineon Technologies Corporation | 3,005 | BOMに追加 |
| BSC050N10NS5 | MOSFET TRENCH >=100V | Infineon Technologies Corporation | 2,947 | BOMに追加 |
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