このウェブサイトは Cookie を使用しています。 このサイトを使用すると、Cookie の使用に同意したことになります。 詳細については、こちらをご覧ください プライバシーポリシー.
FBGA
(合計 765 個のパーツ)| 製造元部品番号 | 説明 | メーカー | 在庫あり | 手術 |
|---|---|---|---|---|
| MT52L512M32D2PF-093 WT:B | DRAM LPDDR3 16G 512MX32 FBGA DDP | Micron Technology | 6,554 | BOMに追加 |
| KLMAG2GE4A-A001 | KLMAG2GE4A-A001 datasheet available for download, part of Samsung semiconductor's eMMC product family | Samsung | 6,554 | BOMに追加 |
| MT40A256M16GE-083E | DDR DRAM, | MICRON TECHNOLOGY INC | 6,554 | BOMに追加 |
| K4B2G1646Q-BCMA | DRAM Chip DDR3 SDRAM 2Gbit 128Mx16 1.5V | Samsung | 6,554 | BOMに追加 |
| K4B4G1646E-BCMA | DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.5V 96-Pin FBGA | Samsung | 6,554 | BOMに追加 |
| H5GQ2H24MFR-R0C | DDR DRAM, 64MX32, CMOS, PBGA170, BGA-170 | SK HYNIX INC | 6,554 | BOMに追加 |
| H5TC2G83CFR-H9A | DDR DRAM, 256MX8, 20ns, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | SK HYNIX INC | 6,554 | BOMに追加 |
| H5TC2G43BFR-H9A | DRAM Chip DDR3L SDRAM 2Gbit 512Mx4 1.35V 82-Pin FBGA | SKHYNIX | 6,554 | BOMに追加 |
| K4T2G084QA-HCE6 | DDR DRAM, 256MX8, 0.45ns, CMOS, PBGA68, ROHS COMPLIANT, FBGA-68 | SAMSUNG SEMICONDUCTOR INC | 6,554 | BOMに追加 |
| K4Z80325BC-HC14 | DRAM Chip GDDR6 SDRAM 8Gbit 256Mx32 180-Pin FBGA | Samsung | 6,554 | BOMに追加 |
| N2CB2G16BP-CG | DRAM | SAMSUNG | 4,977 | BOMに追加 |
| EBJ10UE8BDS0-AE-F | DRAM Module, 128MX64, CMOS, HALOGEN FREE AND ROHS COMPLIANT, SODIMM-204 | ELPIDA MEMORY INC | 6,554 | BOMに追加 |
| KMFN60012B-B214 | IC FLASH 8GB EMMC, 8Gb LPDDR3 | SAMSUNG ELECTRONICS | 6,554 | BOMに追加 |
| KLMBG4GESD-B03P | eMMC 5.0, Density 32 GB, Voltage 1.8/3.3 V, Interface HS400, Package Size 11.5x13x1.0mm,Temp. -40~85°C | SAMSUNG | 6,554 | BOMに追加 |
| KFH8GH6U4M-DIB6 | SAMSUNG | 6,554 | BOMに追加 | |
| EBE21UE8AFFA-8G-F | DDR DRAM Module, 512MX64, 0.4ns, CMOS, HALOGEN FREE AND ROHS COMPLIANT, DIMM-240 | ELPIDA MEMORY INC | 6,554 | BOMに追加 |
| R7S721001VLBG | MCU 32-bit ARM Cortex A9 RISC ROMLess 3.3V324-Pin FBGA | RENESAS | 6,554 | BOMに追加 |
| K4B4G1646B-HYK0 | DRAM Chip DDR3 SDRAM 4Gbit 256Mx16 1.35V 79-Pin FBGA | SAMSUNG ELECTRONICS | 6,554 | BOMに追加 |
| K4B2G1646F-BCK0000 | Samsung Electronics | 7,604 | BOMに追加 | |
| MT47H32M16CC-3 | DRAM Chip DDR2 SDRAM 512Mbit 32Mx16 1.8V 84-Pin FBGA Tray | MICRON | 6,554 | BOMに追加 |
| MT47H32M16BN-37E | DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84 | MICRON TECHNOLOGY INC | 6,554 | BOMに追加 |
| MT47H128M8HQ-25:G | Micron Technology | 9,174 | BOMに追加 | |
| MT47H128M16HG-37E:A | DRAM Chip DDR2 SDRAM 2Gbit 128Mx16 1.8V 84-Pin FBGA Tray | MICRON | 6,554 | BOMに追加 |
| MT47H128M16HG-25:A | DRAM Chip DDR2 SDRAM 2Gbit 128Mx16 1.8V 84-Pin FBGA Tray | MICRON | 6,554 | BOMに追加 |
| K4M51163PE-BG75 | MOBILE SDRAM 512Mb 32Mx16 1.8V FBGA54 | SAMSUNG | 6,554 | BOMに追加 |
| H26M88002AMR | CoC and 2-years warranty / RFQ for pricing | SK HYNIX INC | 6,554 | BOMに追加 |
| MTA36ASF2G72PZ-2G1A2 | Memory Module DDR4 SDRAM 16GB 288-RDIMM | MICRON TECHNOLOGY INC | 6,554 | BOMに追加 |
| K4X1G323PF-8GD8 | DRAM Chip Mobile-DDR SDRAM 1Gbit 32Mx32 1.8V 90-Pin FBGA | Samsung Electronics | 5,258 | BOMに追加 |
| K4T1G084QF-BCF8 | DDR DRAM, 128MX8, 0.35ns, CMOS, PBGA60 | SAMSUNG SEMICONDUCTOR INC | 6,554 | BOMに追加 |
| MT48H32M16LFCJ-75 | Synchronous DRAM, 32MX16, 6ns, CMOS, PBGA54, 10 X 11.50 MM, LEAD FREE, PLASTIC, VFBGA-54 | MICRON TECHNOLOGY INC | 6,554 | BOMに追加 |
| MT47H64M16HR-37E:E | Micron Technology | 8,348 | BOMに追加 | |
| MT41K256M16HA-125AAT | DDR DRAM, 256MX16, CMOS, PBGA96, 10 X 14 MM, LEAD FREE, FBGA-96 | MICRON TECHNOLOGY INC | 6,554 | BOMに追加 |
| MT41J64M16LA | IC DRAM 1GBIT PAR 96FBGA | MICRON | 6,554 | BOMに追加 |
| MT41J64M16JT-15EIT | IC DRAM 1GBIT PAR 96FBGA | MICRON | 6,554 | BOMに追加 |
| EDJ4208EFBG-GN-F | DDR DRAM, 512MX8, CMOS, PBGA78, HALOGEN FREE AND ROHS COMPLIANT, FBGA-78 | ELPIDA MEMORY INC | 6,554 | BOMに追加 |
| MT47H64M8CF-3IT:F | DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60, 8 X 10 MM, ROHS COMPLIANT, FBGA-60 | MICRON TECHNOLOGY INC | 6,554 | BOMに追加 |
| MT47H64M8CF-3 | DRAM Chip DDR2 SDRAM 512M-Bit 64Mx8 1.8V 60-Pin FBGA Tray | Micron Technology Inc. | 6,554 | BOMに追加 |
| MT47H64M16HR-25:G | Micron Technology | 9,692 | BOMに追加 | |
| H5TQ4G43MFR | 4GbDDR3SDRAM | SKHYNIX | 6,554 | BOMに追加 |
| H5TC4G83EFR-PBA | DDR DRAM, | SK HYNIX INC | 6,554 | BOMに追加 |
| K4A8G165WB-BCPB | DDR DRAM, 512MX16, CMOS, PBGA96, FBGA-96 | SAMSUNG | 4,933 | BOMに追加 |
| K4A8G085WC-BCTD | Samsung Electronics | 6,554 | BOMに追加 | |
| K4A8G045WB-BCRC | DDR DRAM, 0.175ns, CMOS, PBGA78, | SAMSUNG SEMICONDUCTOR INC | 6,554 | BOMに追加 |
| H5AN8G8NMFR-UHC | DDR DRAM, 1GX8, CMOS, PBGA78, FBGA-78 | SK HYNIX INC | 6,554 | BOMに追加 |
| H5AN8G6NAFR | 8GbDDR4SDRAMLead-Free&Halogen-Free(RoHSCompliant) | SYHYNIX | 6,554 | BOMに追加 |
| MT18KSF1G72PZ-1G6P1 | 1.35V DDR3L SDRAM RDIMM | MICRON TECHNOLOGY INC | 6,554 | BOMに追加 |
| MT18KDF1G72PZ-1G6P1 | Modules DDR3 SDRAM | Micron Technology | 6,554 | BOMに追加 |
| MT18KDF1G72PDZ-1G6P1 | DRAM Module DDR3 SDRAM 8Gbyte 240RDIMM Tray | MICRON TECHNOLOGY INC | 6,554 | BOMに追加 |
| MT16KTF1G64AZ-1G9P1 | Memory Module DDR3L SDRAM 8GB 240-UDIMM | Micron Technology | 6,554 | BOMに追加 |
| MT18VDDF12872G-40BD3 | Memory Module DDR SDRAM 1GB 184-RDIMM | MICRON TECHNOLOGY INC | 6,554 | BOMに追加 |
その他のパッケージ