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TI UCC27211DDAR

Name: UCC27211DDAR
Rating: 4.5 (10 reviews)

Half-Bridge Gate Driver IC Non-Inverting 8-SO PowerPad

ブランド: TI

製造元部品 #: UCC27211DDAR

データシート: UCC27211DDAR データシート (PDF)

パッケージ/ケース: SOP-8

製品の種類: Power Driver ICs

RoHS ステータス:

在庫状況: 90 個、新しいオリジナル

Warranty: 1 Year Ovaga Warranty - Find Out More

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RFQを提出してください UCC27211DDAR またはメールでご連絡ください: メール: [email protected], 12時間以内にご連絡させていただきます。

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UCC27211DDAR 概要

The UCC27210 and UCC27211 drivers are based on the popular UCC27200 and UCC27201 MOSFET drivers, but offer several significant performance improvements. Peak output pull-up and pull-down current has been increased to 4-A source and 4-A sink, and pull-up and pull-down resistance have been reduced to 0.9 Ω, thereby allowing for driving large power MOSFETs with minimized switching losses during the transition through the Miller Plateau of the MOSFET. The input structure is now able to directly handle 10 VDC, which increases robustness and also allows direct interface to gate-drive transformers without using rectification diodes. The inputs are also independent of supply voltage and have a maximum rating of 20-V.

The switching node (HS pin) of the UCC2721x can handle 18 V maximum which allows the high-side channel to be protected from inherent negative voltages caused parasitic inductance and stray capacitance. The UCC27210 (Pseudo-CMOS inputs) and UCC27211 (TTL inputs) have increased hysteresis allowing for interface to analog or digital PWM controllers with enhanced noise immunity.

The low-side and high-side gate drivers are independently controlled and matched to 2 ns between the turnon and turnoff of each other.

An on-chip 120-V rated bootstrap diode eliminates the external discrete diodes. Undervoltage lockout is provided for both the high-side and the low-side drivers providing symmetric turnon and turnoff behavior and forcing the outputs low if the drive voltage is below the specified threshold.

Both devices are offered in 8-pin SOIC (D), PowerPAD SOIC-8 (DDA), 4-mm × 4-mm SON-8 (DRM) and SON-10 (DPR) packages.

特徴

Drives Two N-Channel MOSFETs in High-Side
and Low-Side Configuration With Independent
Inputs
Maximum Boot Voltage 120-V DC
4-A Sink, 4-A Source Output Currents
0.9-Ω Pullup and Pulldown Resistance
Input Pins Can Tolerate –10 V to 20 V and Are
Independent of Supply Voltage Range
TTL or Pseudo-CMOS Compatible Input Versions
8-V to 17-V VDD Operating Range, (20-V Absolute
Maximum)
7.2-ns Rise and 5.5-ns Fall Time With 1000-pF
Load
Fast Propagation Delay Times (18 ns Typical)
2-ns Delay Matching
Symmetrical Undervoltage Lockout for High-Side
and Low-Side Driver
All Industry Standard Packages Available (SOIC-8,
PowerPAD™ SOIC-8, 4-mm × 4-mm SON-8
and 4-mm × 4-mm SON-10)
Specified from –40 to 140 °C

仕様

パラメータ	価値	パラメータ	価値
Bus voltage (max) (V)	110	Power switch	MOSFET
Input VCC (min) (V)	8	Input VCC (max) (V)	17
Peak output current (A)	4	Operating temperature range (°C)	-40 to 140
Undervoltage lockout (typ) (V)	8	Rating	Catalog
Propagation delay time (µs)	0.02	Rise time (ns)	8
Fall time (ns)	7	Iq (mA)	0.001
Input threshold	TTL	Channel input logic	TTL
Negative voltage handling at HS pin (V)	-12

配送

	配送料	リードタイム
DHL	$20.00-$40.00 (0.50 KG)	2-5 日々
フェデックス	$20.00-$40.00 (0.50 KG)	2-5 日々
UPS	$20.00-$40.00 (0.50 KG)	2-5 日々
TNT	$20.00-$40.00 (0.50 KG)	2-5 日々
EMS	$20.00-$40.00 (0.50 KG)	2-5 日々
登録された航空便	$20.00-$40.00 (0.50 KG)	2-5 日々

処理時間：送料は地域や国によって異なります。

支払い

支払条件		ハンドフィー
	電信送金	銀行手数料 US$30.00 を請求します。
	ペイパル	4.0％のサービス料がかかります。
	クレジットカード	3.5％のサービス料がかかります。
	ウエスタンユニオン	charge US.00 banking fee.
	送金サービス	銀行手数料は 0.00 米ドルかかります。

保証

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2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。ただし、商品は元の状態のままでなければなりません。

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私たちは出荷前にすべての商品を検査し、すべての製品が良好な状態であることを確認し、部品が新しいオリジナルでデータシートと一致していることを確認します。

すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。

パーツポイント

The UCC27211DDAR chip is a dual-channel, high-speed gate driver designed for driving power MOSFETs in applications such as motor control, power supplies, and lighting. It offers robust protection features and excellent performance, making it ideal for high-power applications requiring fast switching speeds and precise control.
Equivalent

The equivalent products of UCC27211DDAR chip are UCC27211, UCC27212, UCC27213, and UCC27214. These chips are part of the UCC27211 family of high-speed, gate drivers with 4 A source and 4 A sink current capability. They are designed for driving power MOSFETs and IGBTs in half-bridge and full-bridge configurations.
Features

1. Dual 4-A/8-A peak source/sink output current 2. Supports up to 60-V input voltage 3. Integrated bootstrap diode 4. Programmable dead time control 5. Adaptive shoot-through protection 6. Integrated undervoltage lockout and thermal shutdown 7. 5-V regulator with 10-mA output 8. Adjustable soft-start 9. Supports up to 2.2-MHz switching frequency
Pinout

The UCC27211DDAR has 8 pins and functions as a high-speed, dual MOSFET driver with 4-A peak source and sink current capabilities. It is commonly used in high-side and low-side driver applications, such as synchronous buck converters and half-bridge inverters.
Manufacturer

The UCC27211DDAR is manufactured by Texas Instruments, a leading semiconductor company that produces a wide range of integrated circuits and embedded processors for various industries including automotive, industrial, and consumer electronics. Texas Instruments is known for its high-quality products and innovative solutions in the field of analog and digital technologies.
Application Field

The UCC27211DDAR is commonly used in high-side or low-side gate driver applications for power MOSFETs and IGBTs. It finds applications in power supplies, motor drives, and inverter systems for industrial and automotive sectors. Its features like high output current, low propagation delay, and high common-mode rejection ratio make it suitable for fast switching and high efficiency systems.
Package

The UCC27211DDAR chip comes in a standard surface mount package type known as SOIC-8. It is a dual-channel low side gate driver with a form factor of an integrated circuit (IC) and a standardized size of 8 pins.