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$5000STGD5H60DF
IGBT Trench Field Stop 600 V 10 A 83 W Surface Mount DPAK
ブランド: STMICROELECTRONICS
製造元部品 #: STGD5H60DF
データシート: STGD5H60DF データシート (PDF)
パッケージ/ケース: DPAK
製品の種類: Single IGBTs
STGD5H60DF 概要
Featuring a groundbreaking trench gate field-stop structure, the STGD5H60DF IGBT offers unmatched conduction and switching capabilities for high-frequency converters. As part of the H series, this device represents the pinnacle of efficiency by balancing conduction and switching losses to deliver optimal performance. With a slightly positive VCE(sat) temperature coefficient, the STGD5H60DF maintains stability under diverse operating conditions, while its precise parameter distribution ensures secure parallel operation. For applications requiring superior efficiency and reliability, the STGD5H60DF sets a new standard in high-performance IGBT technology
特徴
- Rapid thermal recovery
- Safe operating temperature range
- Improved electromagnetic immunity
仕様
| パラメータ | 価値 | パラメータ | 価値 |
|---|---|---|---|
| Source Content uid | STGD5H60DF | Rohs Code | Yes |
| Part Life Cycle Code | Active | Ihs Manufacturer | STMICROELECTRONICS |
| Package Description | DPAK-3/2 | Reach Compliance Code | compliant |
| ECCN Code | EAR99 | Factory Lead Time | 52 Weeks |
| Samacsys Manufacturer | STMicroelectronics | Additional Feature | BULK: 1000 |
| Case Connection | COLLECTOR | Collector Current-Max (IC) | 10 A |
| Collector-Emitter Voltage-Max | 600 V | Configuration | SINGLE WITH BUILT-IN DIODE |
| Gate-Emitter Thr Voltage-Max | 6.9 V | Gate-Emitter Voltage-Max | 20 V |
| JEDEC-95 Code | TO-252 | JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 | Number of Terminals | 2 |
| Operating Temperature-Max | 175 °C | Operating Temperature-Min | -55 °C |
| Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
| Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 83 W |
| Surface Mount | YES | Terminal Form | GULL WING |
| Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Transistor Application | POWER CONTROL | Transistor Element Material | SILICON |
| Turn-off Time-Nom (toff) | 280 ns | Turn-on Time-Nom (ton) | 39 ns |
| VCEsat-Max | 1.95 V |
配送
| 配送タイプ | 配送料 | リードタイム | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間：送料は地域や国によって異なります。
支払い
| 支払条件 | ハンドフィー | |
|---|---|---|
 |
電信送金 | 銀行手数料 US$30.00 を請求します。 |
 |
ペイパル | 4.0％のサービス料がかかります。 |
 |
クレジットカード | 3.5％のサービス料がかかります。 |
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ウエスタンユニオン | charge US.00 banking fee. |
 |
送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
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2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
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パーツポイント
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STGD5H60DF is a chip in the field of power electronics. It is a N-channel enhancement-mode power device designed for high-voltage, fast-switching applications such as in power supplies, motor drives, and automotive systems. This chip is known for its high performance and reliability in high-frequency and high-temperature environments.
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Equivalent
The equivalent products of STGD5H60DF chip are Infineon's IPA50R550CE and IPI50R199CP5 power MOSFETs, as well as STMicroelectronics' STP8NK80Z and STP16NK60Z power transistors. These products are all suitable alternatives for the STGD5H60DF chip, offering similar performance and functionality for various applications. -
Features
The features of STGD5H60DF include a low on-state resistance, fast switching, high ruggedness, and a low gate charge. It is designed for high-speed power switching applications such as motor control, power supplies, and lighting systems. Additionally, it has a breakdown voltage of 600V and a maximum operating temperature of 150°C. -
Pinout
The STGD5H60DF is a dual N-channel 600V, 4.5A IGBT with a freewheeling diode. It comes in a D2PAK package with 3 pins (G, D, S). The G pin is the gate, the D pin is the drain, and the S pin is the source. It is mainly used in power electronics and motor control applications. -
Manufacturer
STGD5H60DF is manufactured by STMicroelectronics, a multinational semiconductor company. STMicroelectronics is a global leader in the design, manufacturing, and marketing of a broad range of semiconductor integrated circuits and discrete devices. The company offers products for various industries including automotive, industrial, consumer, and telecommunications. -
Application Field
The STGD5H60DF is a power MOSFET designed for use in various applications, including high efficiency synchronous rectification, primary side switches, and high-speed DC-DC converters. Its low conduction and switching losses make it suitable for use in power supplies, motor control, and automotive systems, among other applications. -
Package
The STGD5H60DF chip is a Power MOSFET in a DPAK package, with a TO-220FP form factor. It measures 10.3mm x 4.3mm x 10.5mm.
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