MACOM MRF151G

MRF151G 概要

The MRF151G's gold metallization system provides exceptional reliability and thermal conductivity, making it a durable and efficient choice for a wide range of operating temperatures. Its low thermal resistance and input/output capacitances contribute to high efficiency and stability in high-power settings, ensuring consistent performance even in harsh environments. Whether you're a dedicated amateur radio enthusiast or a military professional in need of a dependable RF power transistor, the MRF151G delivers the power and reliability you can trust

特徴

• Fast response time for dynamic applications
• Excellent thermal stability and reliability
• Multimode operation with precise control
• Precise frequency control for high accuracy
• High power handling capacity for demanding loads
• Rugged construction for harsh conditions

応用

• Powerful RF amplifiers
• Advanced radar tech
• Industrial RF systems
• RF heating solutions
• Wireless infrastructure
• Medical RF equipment

仕様

パラメータ	価値	パラメータ	価値
Product Category	RF MOSFET Transistors	RoHS	Details
Transistor Polarity	N-Channel	Technology	Si
Id - Continuous Drain Current	40 A	Vds - Drain-Source Breakdown Voltage	125 V
Operating Frequency	175 MHz	Gain	14 dB
Output Power	300 W	Minimum Operating Temperature	- 65 C
Maximum Operating Temperature	+ 150 C	Mounting Style	SMD/SMT
Brand	MACOM	Configuration	Dual
Pd - Power Dissipation	500 W	Product Type	RF MOSFET Transistors
Factory Pack Quantity	10	Subcategory	MOSFETs
Type	RF Power MOSFET	Vgs - Gate-Source Voltage	40 V
Vgs th - Gate-Source Threshold Voltage	3 V