注文金額が
$5000FQD1N80TM
MOSFET Power MOSFET
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ブランド: ONSEMI
製造元部品 #: FQD1N80TM
データシート: FQD1N80TM データシート (PDF)
パッケージ/ケース: DPAK
製品の種類: Single FETs, MOSFETs
FQD1N80TM 概要
Featuring advanced MOSFET technology, the FQD1N80TM sets itself apart from the competition with its unparalleled performance and reliability. By reducing on-state resistance and optimizing switching capabilities, this power MOSFET offers a level of efficiency and durability that is unmatched in the industry. Whether used in switched mode power supplies or electronic lamp ballasts, the FQD1N80TM ensures superior performance and long-lasting reliability. With its high avalanche energy strength, this MOSFET is capable of handling the most demanding power management applications with ease
特徴
- Ultra-low input current (Typ. 1uA)
- High voltage handling capability (1000V RMS)
- Low thermal impedance (Typ. 30°C/W)
- Small size and low profile (1.5mm x 0.8mm)
応用
- Illuminate your space
- Brighten your home
- Shine a light
仕様
パラメータ | 価値 | パラメータ | 価値 |
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Source Content uid | FQD1N80TM | Pbfree Code | Yes |
Part Life Cycle Code | Active | Ihs Manufacturer | ONSEMI |
Package Description | DPAK-3 | Manufacturer Package Code | 369AS |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 4 Weeks | Samacsys Manufacturer | onsemi |
Avalanche Energy Rating (Eas) | 90 mJ | Case Connection | DRAIN |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 800 V |
Drain Current-Max (ID) | 1 A | Drain-source On Resistance-Max | 20 Ω |
FET Technology | METAL-OXIDE SEMICONDUCTOR | JEDEC-95 Code | TO-252 |
JESD-30 Code | R-PSSO-G2 | JESD-609 Code | e3 |
Moisture Sensitivity Level | 1 | Number of Elements | 1 |
Number of Terminals | 2 | Operating Mode | ENHANCEMENT MODE |
Operating Temperature-Max | 150 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | SMALL OUTLINE |
Peak Reflow Temperature (Cel) | 260 | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 45 W | Pulsed Drain Current-Max (IDM) | 4 A |
Qualification Status | Not Qualified | Surface Mount | YES |
Terminal Finish | MATTE TIN | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | 30 |
Transistor Application | SWITCHING |
配送
配送タイプ | 配送料 | リードタイム | |
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DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
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登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間:送料は地域や国によって異なります。
支払い
支払条件 | ハンドフィー | |
---|---|---|
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電信送金 | 銀行手数料 US$30.00 を請求します。 |
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ペイパル | 4.0%のサービス料がかかります。 |
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クレジットカード | 3.5%のサービス料がかかります。 |
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ウエスタンユニオン | charge US.00 banking fee. |
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送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
1.購入した電子部品には365日保証が含まれており、製品の品質を保証します。
2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
パッキング
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ステップ1 :製品
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ステップ2 :真空包装
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ステップ3 :静電気防止袋
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ステップ4 :個包装
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ステップ5 :梱包箱
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ステップ6 :バーコード配送タグ
すべての製品は静電気防止袋に梱包されます。 ESD 帯電防止保護を備えた状態で出荷されます。
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すべての商品に問題がないことを確認した後、梱包後、安全に梱包し、グローバルエクスプレスで発送します。 優れた耐穿刺性と耐引裂性を示し、シールの完全性も良好です。
パーツポイント
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The FQD1N80TM is a power MOSFET chip designed for high performance in power management applications. It offers low on-resistance and high switching speeds, making it suitable for use in power supplies, motor control, and other power electronics applications. This chip is designed to provide efficient and reliable power management solutions for various industrial and consumer electronics products.
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Equivalent
The equivalent products of the FQD1N80TM chip are the FQD1N80CTM and FQD1N80ETM. These chips are all part of the N-channel MOSFET series from Fairchild Semiconductor, and they have similar specifications and performance characteristics, making them suitable replacements for each other in various electronic applications. -
Features
FQD1N80TM is an N-Channel MOSFET with a VDS of 800V, ID of 1A, and RDS(on) of 18 Ohms. It is suitable for high voltage applications, power supplies, and motor control systems. It features low gate charge, fast switching speed, and low on-state resistance for efficient performance. -
Pinout
The FQD1N80TM is a MOSFET transistor with a pin count of 3. It functions as a power transistor, capable of switching high voltage and current. It is commonly used in power supply, motor control, and lighting applications. -
Manufacturer
The FQD1N80TM is manufactured by Fairchild Semiconductor, which is a global company that specializes in producing power management and semiconductor technologies. -
Application Field
The FQD1N80TM is a power MOSFET designed for use in a wide range of applications including power supplies, motor control, and DC-DC converters. It is also suitable for use in industrial and consumer electronics, as well as automotive and telecommunication systems. -
Package
The FQD1N80TM chip is a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) with a TO-252-3 package type, also known as DPAK (TO-252AA), and comes in a single form and size.
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最小注文数量は1個からとなります。
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