DN2530N8-G

DN2530N8-G 概要

The DN2530 is a low threshold depletion-mode (normally-on) transistor utilizing an advanced vertical DMOS structure and well-proven silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown.Vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired.

特徴

• Fast recovery time ensured
• High current handling capacity
• Low electromagnetic emissions
• Robust against electrical surges

仕様

パラメータ	価値	パラメータ	価値
Product Status	Active	FET Type	N-Channel
Technology	MOSFET (Metal Oxide)	Drain to Source Voltage (Vdss)	300 V
Current - Continuous Drain (Id) @ 25°C	200mA (Tj)	Drive Voltage (Max Rds On, Min Rds On)	0V
Rds On (Max) @ Id, Vgs	12Ohm @ 150mA, 0V	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	300 pF @ 25 V	FET Feature	Depletion Mode
Power Dissipation (Max)	1.6W (Ta)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Supplier Device Package	TO-243AA (SOT-89)
Package / Case	TO-243AA