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PG-TDSON-8
(合計 272 個のパーツ)| 製造元部品番号 | 説明 | メーカー | 在庫あり | 手術 |
|---|---|---|---|---|
| BSC014NE2LSIATMA1 | This Infineon MOSFET is suitable for a wide range of high-performance applications | Infineon Technologies Corporation | 2,187 | BOMに追加 |
| BSC032NE2LSATMA1 | Transistor MOSFET N-channel with 25V voltage rating and 22A current capacity in a 8-pin TDSON EP package, supplied in tape and reel packaging | Infineon Technologies Corporation | 2,846 | BOMに追加 |
| BSC159N10LSFGATMA1 | Robust and efficient device for demanding application | Infineon Technologies Corporation | 2,778 | BOMに追加 |
| BSC090N03MSGATMA1 | N-channel power MOSFET suitable for DC-DC converters, motor drives, and solar panel charge controller | Infineon Technologies Corporation | 2,063 | BOMに追加 |
| BSC014N03MSGATMA1 | Powerful and efficient MOSFET solution for high-reliability and low-voltage operations up to V | Infineon Technologies Corporation | 3,743 | BOMに追加 |
| BSC014N03LSGATMA1 | High-power N-channel transistor for demanding applications | Infineon Technologies Corporation | 2,151 | BOMに追加 |
| BSC057N03MSGATMA1 | High-voltage, high-current transistor for demanding application | Infineon Technologies Corporation | 2,189 | BOMに追加 |
| ISC0804NLSATMA1 | High-power electronic component for efficient energy transfer and contro | Infineon Technologies Corporation | 2,106 | BOMに追加 |
| BSC0805LSATMA1 | Advanced power semiconductor technology for reliable system performanc | Infineon Technologies Corporation | 3,412 | BOMに追加 |
| BSC079N10NSGATMA1 | High-voltage device with 100V rating and 13.4A current handling capacity | Infineon Technologies Corporation | 3,549 | BOMに追加 |
| BSC0803LSATMA1 | High-power N-Channel Transistor for efficient power control application | Infineon Technologies Corporation | 3,194 | BOMに追加 |
| ISC0603NLSATMA1 | Low-loss, high-frequency power transisto | Infineon Technologies Corporation | 2,166 | BOMに追加 |
| BSC0704LSATMA1 | The BSC0704LSATMA1 OptiMOS transistor is ideal for power applications up to 60V | Infineon Technologies Corporation | 3,601 | BOMに追加 |
| BSC016N03LSGATMA1 | Robust circuit protection with high current handling capabilitie | Infineon Technologies Corporation | 3,917 | BOMに追加 |
| BSC019N02KSGAUMA1 | Ideal for DC-DC converters, motor drives, and high-current switching circuits | Infineon Technologies Corporation | 3,076 | BOMに追加 |
| IAUC40N08S5L140ATMA1 | Power MOSFET Designed for Automotive Environments, AEC-Q101 Qualified | Infineon Technologies Corporation | 2,450 | BOMに追加 |
| IAUC60N06S5L073ATMA1 | High-power electronic component for demanding application | Infineon Technologies Corporation | 3,930 | BOMに追加 |
| IAUC60N04S6L030HATMA1 | Infineon IAUC60N04S6L030HATMA1 Power Mosfet | Infineon Technologies Corporation | 2,524 | BOMに追加 |
| IAUC45N04S6L063HATMA1 | Automotive Energy Control Device | Infineon Technologies Corporation | 2,906 | BOMに追加 |
| BSC123N10LSGATMA1 | High-voltage, high-current OptiMOS MOSFET for efficient and safe power transfe | Infineon Technologies Corporation | 3,069 | BOMに追加 |
| BSC440N10NS3GATMA1 | Reliable EP T/R package for 8-Pin TDSON design in harsh environments | Infineon Technologies Corporation | 2,009 | BOMに追加 |
| BSC100N10NSFGATMA1 | Advanced power electronic component suitable for automotive applications | Infineon Technologies Corporation | 2,646 | BOMに追加 |
| BSC118N10NSGATMA1 | Enhanced performance for + voltage system | Infineon Technologies Corporation | 2,593 | BOMに追加 |
| BSC252N10NSFGATMA1 | Optimized performance and minimized thermal resistance for reliable operations | Infineon Technologies Corporation | 2,514 | BOMに追加 |
| BSC042NE7NS3GATMA1 | Advanced N-channel MOSFET design for reliable high-current operation up t | Infineon Technologies Corporation | 3,023 | BOMに追加 |
| BSC054N04NSGATMA1 | N-channel MOSFET with high voltage and current capabiliti | Infineon Technologies Corporation | 3,766 | BOMに追加 |
| BSC030N04NSGATMA1 | Advanced V, A power transistor ideal for wide range of digital and analog circuit | Infineon Technologies Corporation | 2,372 | BOMに追加 |
| BSC050N04LSGATMA1 | Advanced logic-level device for smart power management | Infineon Technologies Corporation | 2,813 | BOMに追加 |
| BSC019N04NSGATMA1 | High-power switching solution for automotive applications, offering high efficiency and reliability | Infineon Technologies Corporation | 3,029 | BOMに追加 |
| BSC150N03LDGATMA1 | Compact TDSON-package for space-constrained designs and reduced costs | Infineon Technologies Corporation | 2,198 | BOMに追加 |
| BSC042N03MSGATMA1 | High-voltage N-channel MOSFET for reliable switching applications up to V and | Infineon Technologies Corporation | 3,516 | BOMに追加 |
| BSC0909NSATMA1 | TDSON-package ensures efficient thermal dissipation and reduced noise interference | Infineon Technologies Corporation | 3,395 | BOMに追加 |
| BSC025N03MSGATMA1 | OptiMOS 3M technology utilized in the design of this MOSFET | Infineon Technologies Corporation | 2,623 | BOMに追加 |
| BSC057N03LSGATMA1 | N-channel transistor MOSFET for switching applications with 30V voltage handling and 17A current capacity in 8-pin TDSON EP package | Infineon Technologies Corporation | 2,674 | BOMに追加 |
| BSC042N03LSGATMA1 | 30V Transistor with 93A Capability | Infineon Technologies Corporation | 2,136 | BOMに追加 |
| BSC026N02KSGAUMA1 | 8-Pin TDSON EP Packaging for Transistor MOSFET | Infineon Technologies Corporation | 3,621 | BOMに追加 |
| BSC046N02KSGAUMA1 | Compact power management component for efficient energy transfer | Infineon Technologies Corporation | 3,576 | BOMに追加 |
| IPLK80R750P7ATMA1 | Advanced power electronics component offering reliable performance and reduced thermal stres | Infineon Technologies Corporation | 2,388 | BOMに追加 |
| IPLK80R900P7ATMA1 | High-power transistor for robust power control application | Infineon Technologies Corporation | 2,125 | BOMに追加 |
| IPLK80R1K4P7ATMA1 | High-reliability transistor for demanding automotive system | Infineon Technologies Corporation | 2,982 | BOMに追加 |
| IPLK80R1K2P7ATMA1 | N-channel device for efficient switching applications | Infineon Technologies Corporation | 3,748 | BOMに追加 |
| IPLK70R900P7ATMA1 | Robust and compact package with low thermal resistance for improved heat dissipation and reduced risk of overheating | Infineon Technologies Corporation | 3,839 | BOMに追加 |
| BSC097N06NSTATMA1 | Trans MOSFET N-CH 60V 13A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 3,731 | BOMに追加 |
| BSC014N04LSTATMA1 | Trans MOSFET N-CH 40V 33A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 3,778 | BOMに追加 |
| ISC012N04LM6ATMA1 | N Channel Power Mosfet | Infineon Technologies Corporation | 2,843 | BOMに追加 |
| BSC0502NSIATMA1 | Trans MOSFET N-CH 30V 26A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 2,753 | BOMに追加 |
| BSC004NE2LS5ATMA1 | Trans MOSFET N-CH 25V 40A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 3,353 | BOMに追加 |
| BSC079N03LSCGATMA1 | Trans MOSFET N-CH 34V 14A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 3,918 | BOMに追加 |
| BSC018NE2LSATMA1 | High-power N-channel MOSFET transistor designed for operating at 25V with a maximum current capacity of 29A | Infineon | 2,376 | BOMに追加 |
| BSC0804LSATMA1 | BSC0804LSATMA1 MOSFET is configured as N-channel, with specifications of 100 volts, 40 amperes, and housed in a TDSON package | Infineon | 3,198 | BOMに追加 |
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