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PG-TDSON-8
(合計 272 個のパーツ)製造元部品番号 | 説明 | メーカー | 在庫あり | 手術 |
---|---|---|---|---|
IAUC80N04S6L032 | High power handling capability of 50W | Infineon Technologies Corporation | 3,678 | BOMに追加 |
IAUC100N04S6N022 | MOSFET with 20V and 40V ratings | Infineon Technologies Corporation | 3,317 | BOMに追加 |
IAUC100N04S6L025 | MOSFET component suitable for use with voltage levels ranging from 20V to 40V | Infineon Technologies Corporation | 2,413 | BOMに追加 |
IAUC100N04S6L020 | IAUC100N04S6L020 MOSFETs ROHS TDSON-8(6.2x5.2) | Infineon Technologies Corporation | 2,989 | BOMに追加 |
IAUC100N04S6L014 | IAUC100N04S6L014 - MOSFET with 20V to 40V range | Infineon Technologies Corporation | 2,874 | BOMに追加 |
BSC067N06LS3G | The BSC067N06LS3 G MOSFET is designed for N-channel operation with a maximum voltage rating of 60V and a current capacity of 50A | Infineon Technologies Corporation | 2,122 | BOMに追加 |
BSZ0902NSI | 30 V Voltage Rating | Infineon Technologies Corporation | 2,850 | BOMに追加 |
BSZ0901NSI | High-power N-channel transistor suitable for high-voltage DC-DC converters and motor control application | Infineon Technologies Corporation | 3,696 | BOMに追加 |
BSZ0901NS | OptiMOS MOSFET N-Ch 30V 40A TDSON-8 | Infineon Technologies Corporation | 2,620 | BOMに追加 |
BSC12DN20NS3G | N-channel power MOSFET with a voltage rating of 200V and a maximum current capacity of 11.3A, encapsulated in an 8-pin TDSON EP package | Infineon Technologies Corporation | 3,942 | BOMに追加 |
BSC0902NSI | 30V 23A power transistor | Infineon Technologies Corporation | 3,892 | BOMに追加 |
BSZ0904NSI | N-Channel 30V 18A Automotive Transistor MOSFET 8-Pin TSDSON EP Tape and Reel | Infineon Technologies Corporation | 2,396 | BOMに追加 |
BSC13DN30NSFDATMA1 | This component is a N-channel MOSFET transistor with a voltage rating of 300V and a current capacity of 16A | Infineon Technologies Corporation | 3,183 | BOMに追加 |
BSC160N15NS5ATMA1 | N-Channel 150V MOSFET designed for high-power applications, capable of handling up to 36A of current | Infineon Technologies Corporation | 2,101 | BOMに追加 |
ISC030N10NM6ATMA1 | High-power N-channel MOSFET for demanding applications" | Infineon Technologies Corporation | 3,095 | BOMに追加 |
BSC034N10LS5ATMA1 | This MOSFET transistor has an N-channel design | Infineon Technologies Corporation | 2,321 | BOMに追加 |
BSC096N10LS5ATMA1 | Ideal for applications requiring high power handling and low voltage operation | Infineon Technologies Corporation | 2,896 | BOMに追加 |
ISC230N10NM6ATMA1 | ISC230N10NM6ATMA1 is a TRENCH MOSFET optimized for high voltage operation | Infineon Technologies Corporation | 2,960 | BOMに追加 |
ISC027N10NM6ATMA1 | ISC027N10NM6ATMA1 - MOSFET Utilizing Trench Structure for Voltage Levels >=100V | Infineon Technologies Corporation | 2,797 | BOMに追加 |
ISC011N06LM5ATMA1 | Power transistor with N-channel design capable of handling up to 60V and 37A, housed in an 8-pin TDSON EP package for easy installation | Infineon Technologies Corporation | 2,842 | BOMに追加 |
BSC016N06NSTATMA1 | Surface mount MOSFET transistor with enhanced package and thermal resistance | Infineon Technologies Corporation | 3,823 | BOMに追加 |
BSC065N06LS5ATMA1 | BSC065N06LS5ATMA1, a MOSFET renowned for its differentiated features, offers unparalleled performance | Infineon Technologies Corporation | 2,769 | BOMに追加 |
BSC014N06NSTATMA1 | The N-Channel BSC014N06NSTATMA1 is an OptiMOS Power-Transistor with a 60V rating, 257A current capacity, and 1 | Infineon Technologies Corporation | 2,053 | BOMに追加 |
BSC094N06LS5ATMA1 | MOSFET transistor for electronic circuits, packaged in tape form | Infineon Technologies Corporation | 2,595 | BOMに追加 |
BSC014N04LSIATMA1 | Power MOSFET for N-channel operation with a 40V voltage rating, capable of handling currents up to 100A, featuring a low on-resistance of 0 | Infineon Technologies Corporation | 3,982 | BOMに追加 |
BSC022N04LS6ATMA1 | Transistor MOSFET N-channel with 40V and 27A | Infineon Technologies Corporation | 2,671 | BOMに追加 |
BSC0504NSIATMA1 | Precise current regulation with low voltage drop for energy-efficient designs | Infineon Technologies Corporation | 2,940 | BOMに追加 |
BSC026NE2LS5ATMA1 | Low on-resistance power MOSFET | Infineon Technologies Corporation | 2,139 | BOMに追加 |
BSC010NE2LSIATMA1 | BSC010NE2LSIATMA1 MOSFET N-type 25 volts 100 amps TDSON-8 | Infineon Technologies Corporation | 2,416 | BOMに追加 |
BSC009NE2LS5ATMA1 | 8-pin TDSON EP packaged N-channel MOSFET with 25V VDS and 41A IDS | Infineon Technologies Corporation | 2,696 | BOMに追加 |
BSC009NE2LS5IATMA1 | Trans MOSFET N-CH 25V 40A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 2,028 | BOMに追加 |
BSC050NE2LSATMA1 | OptiMOS™ technology for optimized performance | Infineon Technologies Corporation | 3,840 | BOMに追加 |
ISC0803NLSATMA1 | 8TDSON MOSFET with N-channel configuration, 100V maximum voltage and 8.8A continuous/37A pulsed current ratings | Infineon Technologies Corporation | 3,819 | BOMに追加 |
BSC0802LSATMA1 | This MOSFET model BSC0802LSATMA1 features an N-channel design, supporting up to 100V of voltage and 100A of current flow, packaged in PG-TDSON | Infineon Technologies Corporation | 2,220 | BOMに追加 |
BSC0702LSATMA1 | Field-effect transistor for high-power applications | Infineon Technologies Corporation | 2,379 | BOMに追加 |
BSC0703LSATMA1 | BSC0703LSATMA1 Power MOSFET Transistor | Infineon Technologies Corporation | 3,608 | BOMに追加 |
BSC190N12NS3GATMA1 | Energy-efficient MOSFET suitable for ROHS compliant applications | Infineon Technologies Corporation | 3,009 | BOMに追加 |
BSC077N12NS3GATMA1 | BSC077N12NS3GATMA1 is an N-channel power MOSFET designed for single-channel applications, offering a voltage rating of 120 volts | Infineon Technologies Corporation | 2,413 | BOMに追加 |
BSC060N10NS3GATMA1 | OptiMOS 3 technology for optimized performance | Infineon Technologies Corporation | 2,159 | BOMに追加 |
BSC057N08NS3GATMA1 | BSC057N08NS3GATMA1 is an OptiMOS™ power MOSFET featuring a single N-channel design | Infineon Technologies Corporation | 3,091 | BOMに追加 |
BSC036NE7NS3GATMA1 | OptiMOS technology enables high current density, low on-resistance, and minimal capacitance for efficient energy transmission | Infineon Technologies Corporation | 2,448 | BOMに追加 |
BSC027N04LSGATMA1 | Product BSC027N04LSGATMA1 is a MOSFET with N-channel configuration, capable of handling 30 volts and a current of 80 amps | Infineon Technologies Corporation | 3,839 | BOMに追加 |
BSC059N04LSGATMA1 | Compact and durable N-channel MOSFET specifically engineered for high-voltage and high-current switching tasks | Infineon Technologies Corporation | 3,411 | BOMに追加 |
IRFH8201TRPBF | Transistor N-channel MOSFET with a voltage rating of 25V and a current rating of 49A, packaged in an 8-pin PQFN format for tape and reel packaging | Infineon Technologies Corporation | 3,779 | BOMに追加 |
BSC007N04LS6ATMA1 | Compliant 1 mm 3 W 1 8 ns 40 ns 175 °C | Infineon Technologies Corporation | 3,190 | BOMに追加 |
BSC025N08LS5ATMA1 | Trans MOSFET N-CH 80V 100A 8-Pin TDSON EP T/R | Infineon Technologies Corporation | 2,294 | BOMに追加 |
BSC067N06LS3 | 60V 6.7mΩ@50A,10V 2.2V@35uA null TDSON-8 MOSFETs ROHS | Infineon Technologies Corporation | 3,889 | BOMに追加 |
BSC014N04LSI | MOSFET N-Ch 40V 100A TDSON-8 FL OptiMOS | Infineon Technologies Corporation | 3,819 | BOMに追加 |
BSZ900N20NS3G | N-Channel 200 V 15.2A (Tc) 62.5W (Tc) Surface Mount PG-TSDSON-8 | Infineon Technologies Corporation | 2,524 | BOMに追加 |
IAUC120N04S6N013 | MOSFET MOSFET_(20V 40V) | Infineon Technologies Corporation | 3,201 | BOMに追加 |
その他のパッケージ