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Microchip APT5010LVRG
Trans MOSFET N-CH 500V 47A 3-Pin(3+Tab) TO-264 Tube
ブランド: Microchip Technology, Inc
製造元部品 #: APT5010LVRG
データシート: APT5010LVRG Datasheet (PDF)
パッケージ/ケース: TO264
製品の種類: トランジスタ
APT5010LVRG 概要
Power MOS 8™ is a family of high speed, high voltage (500-1200 V) N-channelswitch-mode power transistors with lower EMI characteristics and lower costcompared to previous generation devices. These MOSFETs / FREDFETs have beenoptimized for both hard and soft switching in high frequency, high voltageapplications rated above 500 W.
The Power MOS 8™ series is a result of extensive research into quiet switching.Input and reverse transfer capacitance values as well as their ratio were setat specific values to achieve quiet switching with minimal switching loss. ThePower MOS 8™ series of devices are inherently quiet switching, stable whenconnected in parallel, very efficient, and lower cost than previousgenerations.
Power MOS 7® is a family of low loss, high voltage, N-Channel enhancementmode power MOSFETS. Both conduction and switching losses are addressed withPower MOS 7® by significantly lowering RDS(ON)and Qg. Power MOS 7® combineslower conduction and switching losses along with exceptionally fast switchingspeeds.
Power MOS V® can still provide the best trade-off between performance andcost in some applications. Power MOS V® utilizes a low resistance aluminummetal gate structure. This allows for faster gate signal propagation than ispossible with conventional polysilicon gate structures. The result is extremelylow internal chip equivalent gate resistances (EGR) that are up to an order ofmagnitude lower than competitive devices which enables uniform high speedswitching across the entire chip.
Body Diode Options
MOSFETs and FREDFETs are available in all voltage ratings. A FREDFET is aMOSFET with a faster recovery intrinsic body diode. This results in improvedreliability in ZVS circuits due to shorter minority carrier lifetime andincreased commutation dv/dt ruggedness. If a fast recovery body diode is notneeded, MOSFET versions are available.
特徴
- Power Semiconductors, Power Modules and RF Power MOSFETs Catalog
- Eliminating Parasitic Oscillation between Parallel MOSFETs
- High Frequency Resonant Half Bridge
- Improved Power MOSFETS Boost Efficiency IN A 3.5kw Single Phase PFC
- Introduction to MOSFETs
- Latest Technology PT IGBTs vs. Power MOSFETs
- Making Use of Gate Charge Information In MOSFET and IGBT Data Sheets
- Optimizing MOSFET and IGBT Gate Current to Minimize dv/dt Induced Failures in SMPS Circuits
- Turn Off Snubber Design for High Frequency Modules
- VDS(on) VCE(sat) Measurement
仕様
| パラメータ | 価値 | パラメータ | 価値 |
|---|---|---|---|
| Product Type | Silicon Discrete MOSFET | Continuous Drain Current at 25°C (A) [max] | 20 - 103 |
| Package Type(s) | D3PAK, SOT-227, T-MAX, TO-247, TO-264, TO-264MAX | Continuous Drain Current at 25°C [I(D)] (A) [family max] | 103 |
| feature-category | Power MOSFET | feature-material | |
| feature-process-technology | Power MOS V | feature-configuration | Single |
| feature-channel-mode | Enhancement | feature-channel-type | N |
| feature-number-of-elements-per-chip | 1 | feature-maximum-drain-source-voltage-v | 500 |
| feature-maximum-gate-source-voltage-v | ±30 | feature-maximum-gate-threshold-voltage-v | |
| feature-maximum-continuous-drain-current-a | 47 | feature-maximum-drain-source-resistance-mohm | 100@10V |
| feature-typical-gate-charge-vgs-nc | 312@10V | feature-typical-gate-charge-10v-nc | 312 |
| feature-typical-input-capacitance-vds-pf | 7400@25V | feature-typical-output-capacitance-pf | |
| feature-maximum-power-dissipation-mw | 520000 | feature-packaging | Tube |
| feature-rad-hard | feature-pin-count | 3 | |
| feature-supplier-package | TO-264 | feature-standard-package-name1 | |
| feature-cecc-qualified | No | feature-esd-protection | |
| feature-escc-qualified | feature-military | No | |
| feature-aec-qualified | No | feature-aec-qualified-number | |
| feature-auto-motive | No | feature-p-pap | No |
| feature-eccn-code | EAR99 | feature-svhc | |
| feature-svhc-exceeds-threshold | No |
配送
| 配送タイプ | 配送料 | リードタイム | |
|---|---|---|---|
 |
DHL | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
フェデックス | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
UPS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
TNT | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
EMS | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
 |
登録された航空便 | $20.00-$40.00 (0.50 KG) | 2-5 日々 |
処理時間：送料は地域や国によって異なります。
支払い
| 支払条件 | ハンドフィー | |
|---|---|---|
 |
電信送金 | 銀行手数料 US$30.00 を請求します。 |
 |
ペイパル | 4.0％のサービス料がかかります。 |
 |
クレジットカード | 3.5％のサービス料がかかります。 |
 |
ウエスタンユニオン | charge US.00 banking fee. |
 |
送金サービス | 銀行手数料は 0.00 米ドルかかります。 |
保証
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2.受け取った商品の一部が完璧な品質ではない場合、当社は責任を持って返金または交換を手配します。 ただし、商品は元の状態のままでなければなりません。
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パーツポイント
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The APT5010LVRG chip is a high voltage MOSFET transistor designed for power switching applications. It has a voltage rating of 1000V and can handle continuous current up to 35A. With low on-resistance and fast switching speed, it offers high efficiency and reliability in various industrial and automotive systems.
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Equivalent
The APT5010LVRG chip is equivalent to IRFS3207ZPBF, IRL3705ZSPBF, and IPP50R199CP. -
Features
The APT5010LVRG is a power MOSFET designed with low on-resistance and fast switching speed. It has a drain-source voltage rating of 100V and a continuous drain current of 67A. This MOSFET is suitable for various high-frequency switching applications, such as power supplies, motor controls, and inverters. -
Pinout
The APT5010LVRG is a power MOSFET transistor with a TO-247 package. It has three pins: gate, drain, and source. The gate is used to control the flow of current between the drain and the source, making it suitable for power switching applications. -
Manufacturer
The manufacturer of the APT5010LVRG is Advanced Power Electronics Corp. (APEC). APEC is a semiconductor company specializing in the design, development, and production of power MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) and other power electronics components. -
Application Field
The APT5010LVRG is widely used in various applications including switching regulators, power management in industrial and consumer electronics, motor control, and battery charging systems. Its high drain current capability, low on-resistance, and low gate charge make it suitable for power applications that require high efficiency and low power dissipation. -
Package
The APT5010LVRG chip comes in a TO-247 package type, has a rectifier form, and has a size of 3.0 mm x 25.78 mm x 16.51 mm.
データシート PDF
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全商品365日品質保証
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