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TO-220FP-3
(合計 131 個のパーツ)| 製造元部品番号 | 説明 | メーカー | 在庫あり | 手術 |
|---|---|---|---|---|
| 2SK2391 | 2SK2391 MOSFET 220NIS2 PLN: Discontinued (08-10), Phased out (10-01), Obsolete (10-04), Discontinued as of February 23, 2010 | Toshiba | 9,458 | BOMに追加 |
| SSS4N60B | The TO-220F package provides excellent thermal performance for efficient power dissipation | Onsemi | 3,534 | BOMに追加 |
| SPA04N60C3 | This MOSFET has a low on-state resistance of 950mΩ at 10V and 2.8A, as well as a threshold voltage of 3.9V at 200uA | Infineon | 2,058 | BOMに追加 |
| STP20NM50FP | High-power N-channel MOSFET with 500V and 20A capabilities in TO-220FP packaging | Stmicroelectronics | 3,414 | BOMに追加 |
| IPA60R600CP | MOSFET N-CH 600V 6.1A Transistor | Infineon | 2,584 | BOMに追加 |
| STP11NM60FP | and A capabilities make it suitable for various applicatio | STMicroelectronics | 9,458 | BOMに追加 |
| STP36NF06FP | This MOSFET operates as an N-channel device with a maximum voltage tolerance of 60 volts and an on-state resistance of 0 | STMicroelectronics | 9,458 | BOMに追加 |
| 2SK2507 | Compact and powerful FET solution for various industrial uses | Toshiba | 9,458 | BOMに追加 |
| 2SK2232 | Compact and reliable TO-B package with pin connectivity | Toshiba | 9,458 | BOMに追加 |
| D10LC20UR | Rectifier Diode made of Silicon Material | Shindengen | 5,970 | BOMに追加 |
| STTA506F | STTA506F: Diode Manufactured by ST Microelectronics" | Stmicroelectronics | 6,214 | BOMに追加 |
| SF20L60U | SF20L60U, a diode rated for 600V and 20A, comes in a 2-pin FTO-220 package | shindengen | 9,617 | BOMに追加 |
| STP9NB50FP | Suitable for high-power applications requiring efficient switching operations | stmicroelectronics | 8,766 | BOMに追加 |
| STP5NB100FP | The STP5NB100FP is a 3-pin (3+Tab) TO-220FP-packaged N-channel MOSFET, engineered to withstand voltages up to 1000 volts and currents up to 5 amps | stmicroelectronics | 8,416 | BOMに追加 |
| STP6NC60FP | N-channel MOSFET with 600 volts and 6 amps | Stmicroelectronics | 8,465 | BOMに追加 |
| SPA12N50C3 | Trans MOSFET N-Channel 500 Volts 11.6 Amps 3-Pin TO-220FP Tube | Infineon | 9,458 | BOMに追加 |
| SF10L60U | A single-phase rectifier diode | Shindengen | 5,031 | BOMに追加 |
| R5009FNX | Described as a Trans MOSFET | Rohm Semiconductor | 5,016 | BOMに追加 |
| MURF1660CT | Rectifiers with 50ns response time, capable of handling 16A and 600V | Onsemi | 8,420 | BOMに追加 |
| FQPF16N25C | Described as a TO-220AB package, FQPF16N25C offers robustness and ease of mounting, making it convenient for various electronic circuit designs | Onsemi | 9,458 | BOMに追加 |
| D10LC20U | Rectifier diode with 1 phase and 2 elements, rated at 10A and 200V V(RRM), made of silicon, with TO-220AB package and 3 pins | Shindengen | 9,381 | BOMに追加 |
| 2SK2381 | Low-voltage, high-current device ideal for switching circuit | Toshiba | 9,458 | BOMに追加 |
| 2SK2312 | MOSFET with a low on-resistance of 0.017 Ohm | Toshiba | 9,458 | BOMに追加 |
| 2SK3667 | General-purpose FET with 3 pins | Toshiba | 5,831 | BOMに追加 |
| STGF19NC60KD | High-Power IGBT Module for Efficient Power Conversi | STMicroelectronics | 9,458 | BOMに追加 |
| STP5NK50ZFP | N-Channel 500 V 4.4A (Tc) 70W (Tc) Through Hole TO-220FP | STMicroelectronics | 9,458 | BOMに追加 |
| STF12N65M2 | Advanced N-channel MOSFET with low on-resistance and high breakdown voltage | STMicroelectronics | 9,458 | BOMに追加 |
| STTH2003CFP | Diode Array 1 Pair Common Cathode 300 V 10A Through Hole TO-220-3 Full Pack | STMicroelectronics | 9,458 | BOMに追加 |
| STTH1602CFP | The RECTIFIER STTH1602CFP is recognized for its adeptness in rectifying electrical currents with precision and reliability | STMicroelectronics | 9,458 | BOMに追加 |
| MJF31CG | Bipolar (BJT) Transistor NPN 100 V 3 A 3MHz 2 W Through Hole TO-220FP | onsemi | 9,458 | BOMに追加 |
| MJF18008 | MJF18008: 8.0 A NPN Bipolar Power Transistor with a maximum voltage of 450 V | Onsemi | 8,008 | BOMに追加 |
| MJF15030G | Bipolar (BJT) Transistor NPN 150 V 8 A 30MHz 2 W Through Hole TO-220FP | onsemi | 9,458 | BOMに追加 |
| FQPF27P06 | MOSFET 60V P-Channel QFET | onsemi | 9,458 | BOMに追加 |
| MJF15030 | Bipolar Transistors - BJT 8A 150V 36W NPN | onsemi | 6,190 | BOMに追加 |
| FQPF16N15 | MOSFET 150V N-Ch QFET | onsemi | 9,458 | BOMに追加 |
| IPA60R800CE | IPA60R800CE Product: N-Channel MOSFET Transistor with 600V and 8.4A rating | INFINEON TECHNOLOGIES AG | 8,719 | BOMに追加 |
| UGF10GCT | High-voltage TO-220AB package with reliable rectification capabilities | vishay | 6,820 | BOMに追加 |
| TK12A50D(Q) | TO-220SIS Packaged N-Channel MOSFET Transistor, 12A, 500V | toshiba | 6,240 | BOMに追加 |
| STP8NM50FP | Robust and reliable TO-B package for demanding industrial use cases | STMicroelectronics | 9,458 | BOMに追加 |
| SSS7N60B | N-channel MOSFET with 600V rating, 4A current capacity, and 1.2 Ohm resistance | onsemi | 6,578 | BOMに追加 |
| SF5L60U | SF5L60U: Unveiling the features of the low-loss rectifier diode | shindengen | 5,943 | BOMに追加 |
| SFS9620 | SFS9620 is a Power MOSFET with P-Channel type, featuring a 200V voltage rating, 3A current rating, and 1.5 ohm on-resistance | FAIRCHILD SEMICONDUCTOR CORP | 9,864 | BOMに追加 |
| SF20LC30 | Rectifier Diode with 1 Phase | shindengen | 5,605 | BOMに追加 |
| SF10LC40 | Rectifier Diode with Low Loss | shindengen | 7,170 | BOMに追加 |
| RB225T100 | The RB225T100 Schottky Barrier Diode has a common cathode configuration and is suitable for use in various electrical applications | ROHM Semiconductor | 9,458 | BOMに追加 |
| IRF640FP | With a voltage rating of 200 Volts, the IRF640FP MOSFET is ideal for high power applications | STMicroelectronics | 9,458 | BOMに追加 |
| IRF630FP | Power MOSFET Component | STMicroelectronics | 9,458 | BOMに追加 |
| FJPF5200OTU | Bipolar transistors, specifically NPN type, capable of handling up to 250 volts and 17 amperes, with a power dissipation rating of 50 watts | onsemi | 9,458 | BOMに追加 |
| D4L20U | Low loss and reliable diode solution for power electronics | Shindengen | 9,988 | BOMに追加 |
| D5LD20U | 2.5A Rectifier Diode Operating at 200V VRRM with 1 Phase and 2 Elements | SHINDENGEN ELECTRIC MANUFACTURING CO LTD | 5,906 | BOMに追加 |
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