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SOT363
(合計 75 個のパーツ)| 製造元部品番号 | 説明 | メーカー | 在庫あり | 手術 |
|---|---|---|---|---|
| ADM1085AKSZ | 6-Pin SC-70 package | Analog Devices | 3,943 | BOMに追加 |
| BGA2817 | Compact SMD amplifier for RF and microwave application | Nxp | 2,415 | BOMに追加 |
| PMGD370XN | PMGD370XN: N-channel 30V 0.74A TSSOP 6-pin MOSFET | Nxp | 2,182 | BOMに追加 |
| NTJD4105CT1G | Low-voltage, low-power switching solution for sensitive circuits | ON | 2,895 | BOMに追加 |
| L2N7002DW1T1G | Tape and Reel Packaged Dual N-Channel MOSFET Array with 6-Pin SC-88 Package, 60V Voltage Rating and ±0.115A Current Rating | LESHAN RADIO CO LTD | 9,230 | BOMに追加 |
| BGM1014 | High-frequency amplifier with excellent linearity and efficienc | Nxp | 2,999 | BOMに追加 |
| BGM1013 | High-speed amplification and low-noise operation for reliable signal processin | Nxp | 3,791 | BOMに追加 |
| 74LVC1G18GW | This product is designed to withstand the rigors of harsh automotive environments with operating temperatures from -40°C to 125°C | Nexperia | 3,841 | BOMに追加 |
| 74AUP1G157GW | Precise decoding and encoding of binary information for reliable system operations | Nexperia | 3,342 | BOMに追加 |
| ABA-51563 | RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER | AVAGO | 3,886 | BOMに追加 |
| MGA-86563-TR1G | RF Amplifier with 5 dBm Output and 21.8 dB Gain | broadcom limited | 2 | BOMに追加 |
| BGU7045,115 | Boost your RF signal with this single MMIC amplifie | Nxp | 9,458 | BOMに追加 |
| MASWSS0115 | SPDT RF switch with 0.55dB maximum insertion loss | Te Connectivity | 5,196 | BOMに追加 |
| BAV70DW | Dual Pair Common Cathode Switching Diode BAV70DW: Rated for 75V, 1.25V@150mA Forward Voltage, 4ns Switching Time, SOT-363 Package, ROHS Certification | DIOTEC SEMICONDUCTOR AG | 5,747 | BOMに追加 |
| BAV99BRW | Featuring a voltage reverse recovery rating spanning 50-350V, BAV99BRW belongs to the category of small signal switching diodes | FORMOSA MICROSEMI CO LTD | 9,933 | BOMに追加 |
| BAV99DW | Product BAV99DW is a rectifier diode designed for switching applications, with a voltage rating of 75V and a current handling capacity of 0 | GOOD-ARK ELECTRONICS CO LTD | 9,493 | BOMに追加 |
| BGA2869 | Wide Band Low Power Amplifier Designed for RF/Microwave Signals | Nxp | 6,187 | BOMに追加 |
| ABA-54563 | High-Speed Connectivity: Enables efficient data transfer for IoT use cases | Avago Technologies | 7,030 | BOMに追加 |
| MASWSS0204 | Miniaturized SP4T chip optimizes 5G system performance and reliability | Te Connectivity | 7,586 | BOMに追加 |
| MASWSS0192 | RF Switch SPDT with 6-Pin SOT-363 Bulk Packaging, 0MHz to 3GHz Frequency Range | Te Connectivity | 7,919 | BOMに追加 |
| FDG6342L | Experience seamless integration and enhanced performance with the FDG6342L's high-quality design and cutting-edge technology | FAIRCHILD | 5,336 | BOMに追加 |
| NTJD4105CT2G | Low voltage operation with high current handling capabilitie | ON | 7,829 | BOMに追加 |
| DMN66D0LDW | Dual N-Channel MOSFET with Enhancement Mode | DIODES | 9,127 | BOMに追加 |
| DDC114YU | DDC114YU Pre-Biased Bipolar Transistors | diodes incorporated | 6,470 | BOMに追加 |
| BAW56DW | Advanced anode design ensures fast and reliable operatio | Diodes Incorporated | 8,411 | BOMに追加 |
| BC857BS | Low voltage operation with minimal power consumption | Yangjie Technology | 8,512 | BOMに追加 |
| BAV199DW | Powerful switching diodes for demanding industrial control systems | GALAXY SEMI-CONDUCTOR CO LTD | 9,480 | BOMに追加 |
| BAS16TW | Ultra small silicon rectifier diode with three elements, meeting RoHS standards, capable of handling 0.15A current and 75V V(RRM) | SECOS CORP | 8,330 | BOMに追加 |
| BAP70AM | PIN Diode Constructed from Silicon, Encased in Plastic, SC-88 Package with 6 Pins | nxp | 9,558 | BOMに追加 |
| NTB0101GW | A versatile device for transmitting and receiving signals while detecting direction and providing three operating state | nxp | 6,935 | BOMに追加 |
| MMBD4148TW | Ultra-low dropout voltage regulation with fast response time and low noise operatio | diodes incorporated | 5,250 | BOMに追加 |
| DMG1016UDW | Enhancement Mode MOSFET Complementary Pair" | diodes incorporated | 6,545 | BOMに追加 |
| BF1208 | BF1208 - RF MOSFET Transistors | NXP SEMICONDUCTORS | 8,289 | BOMに追加 |
| BAW567DW | switching diode | diodes incorporated | 7,337 | BOMに追加 |
| BAS70TW | This product is also compliant with the Restriction of Hazardous Substances directive | SECOS CORP | 8,172 | BOMに追加 |
| BAV756DW | Diode Array 2 Pair CA + CC 75 V 150mA Surface Mount 6-TSSOP, SC-88, SOT-363 | DIOTEC SEMICONDUCTOR AG | 6,287 | BOMに追加 |
| SGA4563Z | RF Amplifier DC-2.5GHz SSG 20.2dB NF 2.4dB SiGe | QORVO INC | 9,413 | BOMに追加 |
| BAW101S | switching diode | Diodes Incorporated | 9,458 | BOMに追加 |
| DMN5L06DWK | MOSFET | DIODES | 7,963 | BOMに追加 |
| DCX114EU | Bipolar Transistors - Pre-Biased | Diodes Incorporated | 8,378 | BOMに追加 |
| DMN5L06WK | MOSFET | DIODES | 7,807 | BOMに追加 |
| DRDNB21D | Gate Drivers | diodes incorporated | 9,265 | BOMに追加 |
| BGA2818 | MMIC Wideband Amplifier | NXP Semiconductor | 2,983 | BOMに追加 |
| BGA2867 | Miniature module amplifies signals across multiple frequencies | Nxp | 4,098 | BOMに追加 |
| 74LVC1G157GW | Six-input, two-output multiplexer with fast switching time | Nexperia | 5,599 | BOMに追加 |
| NC7SP157L6X | NC7SP157L6X - Multiplexer 1-Element CMOS 2-IN 6-Pin MicroPak T/R | ON | 2,630 | BOMに追加 |
| BGA2716,115 | Compact single-chip solution for radio frequency amplificatio | Nxp | 5,491 | BOMに追加 |
| BGA2771 | Compact design for ease of integration into modern device | Nxp | 7,352 | BOMに追加 |
| BGA2709,115 | High-gain amplification for multi-band wireless applicatio | Nxp | 4,334 | BOMに追加 |
| MMDT4413 | Low-dropout voltage regulator with low quiescent current | Diodes Incorporated | 7,486 | BOMに追加 |
その他のパッケージ